Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS General Description Features The AZ358/358C consists of two independent, high gain and internally frequency compensated operational amplifiers, it is specifically designed to operate from a single power supply. Operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. · · Internally Frequency Compensated for Unity Gain Large Voltage Gain: 100dB (Typical) Low Input Bias Current: 20nA (Typical) Low Input Offset Voltage: 2mV (Typical) Low Supply Current: 0.5mA (Typical) Wide Power Supply Voltage Range: Single Supply: 3V to 18V Dual Supplies: ±1.5V to ±9V Input Common Mode Voltage Range Includes Ground Large Output Voltage Swing: 0V to VCC-1.5V · Power Drain Suitable for Battery Operation · · · · · The AZ358/358C series are Compatible with Industry standard 358. AZ358C has more stringent input offset voltage than AZ358. · The AZ358/358C series are available in standard packages of DIP-8 and SOIC-8. AZ358/358C Applications · · · SOIC-8 Battery Charger Cordless Telephone Switching Power Supply DIP-8 Figure 1. Package Types of AZ358/358C Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Pin Configuration M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 1 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 1+ 3 6 INPUT 2- GND 4 5 INPUT 2+ Figure 2. Pin Configuration of AZ358/358C (Top View) Functional Block Diagram VCC 6µA 4µA 100µA Q5 Q6 Q2 INPUT- Q3 Cc Q7 Q4 Q1 Rsc OUTPUT INPUT+ Q11 Q10 Q8 Q9 Q13 Q12 50µA Figure 3. Functional Block Diagram of AZ358/358C (Each Amplifier) Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Ordering Information AZ358 E1: Lead Free Blank: Tin Lead Circuit Type TR: Tape and Reel Blank: Tube Blank: AZ358 C: AZ358C Package SOIC-8 DIP-8 Input Offset Voltage Maximum Value Maximum Value Package M: SOIC-8 P: DIP-8 Part Number Tin Lead Lead Free Marking ID Tin Lead Lead Free Packing Type 5mV AZ358M AZ358M-E1 AZ358M AZ358M-E1 Tube 5mV AZ358MTR AZ358MTR-E1 AZ358M AZ358M-E1 Tape & Reel 3mV AZ358CM AZ358CM-E1 358CM 358CM-E1 Tube 3mV AZ358CMTR AZ358CMTR-E1 358CM 358CM-E1 Tape & Reel 5mV AZ358P AZ358P-E1 AZ358P AZ358P-E1 Tube 3mV AZ358CP AZ358CP-E1 AZ358CP AZ358CP-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage VCC 20 V Differential Input Voltage VID 20 V Input Voltage VIC -0.3 to 20 V Input Current (VIN<-0.3V) (Note 2) IIN 50 mA Output Short Circuit to Ground (One Amplifier) (Note 3) VCC ≤ 12V and TA = 25oC Continuous DIP-8 830 SOIC-8 550 Power Dissipation (TA=25oC) PD Operating Junction Temperature TJ 150 oC TSTG -65 to 150 oC TLEAD 260 oC Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) mW Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device under these conditions is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to the VCC voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3V (at 25oC) Note 3: Short circuits from the output to VCC can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40mA independent of the magnitude of VCC. At values of supply voltage in excess of +12V, continuous short circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. Recommended Operating Conditions Parameter Supply Voltage Ambient Operating Temperature Range Symbol Min Max Unit VCC 3 18 V TA -40 85 oC Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Electrical Characteristics VCC=5V, GND=0, TA=25oC unless otherwise specified. Parameter Symbol Test Conditions Typ Max AZ358 Min 2 5 AZ358C 2 3 Unit Input Offset Voltage VIO VO=1.4V, RS=0Ω, VCC=5V to 15V Input Bias Current (Note 4) IBIAS IIN+ or IIN-, VCM=0V 20 200 nA 5 50 nA VCC-1.5 V Input Offset Current IIO IIN+-IIN-, VCM=0V Input Common Mode Voltage Range (Note 5) VIR VCC=15V ICC RL=∞, Over full temperature VCC=15V range on all OP Amps VCC=5V Supply Current Output Short Ground to mA CMRR VCM=0V to (VCC-1.5)V 70 90 dB PSRR VCC=5V to 15V 70 90 dB -120 dB CS Circuit 1.2 dB Power Supply Rejection Ration Sink 0.5 100 Common Mode Rejection Ratio Output Current 1.5 85 GV Source 0.7 VCC=15V, RL≥2ΚΩ, VO=1V to 11V Large Signal Voltage Gain Channel Separation (Note 6) 0 mV f=1KHz to 20KHz ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V 20 40 mA ISINK VIN+=0V, VIN-=1V, VCC=15V, VO=2V 10 18 mA VIN+=0V, VIN-=1V, VCC=15V, VO=0.2V 12 50 µA ISC VCC=15V VOH VCC=15V, RL=2KΩ 12 VCC=15V, RL=10KΩ 12.5 Output Voltage Swing VOL 40 VCC=5V, RL=10KΩ 60 V 13.5 5 mA 20 mV Note 4: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so no loading change exists on the input lines. Note 5: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or both inputs can go to +18V without damages, independent of the magnitude of the VCC. Note 6: Due to proximity of external components, insure that coupling is not originating via stray capacitors between these external parts. This typically can be detected as this type of capacitance increases at higher frequencies. Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 5 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Typical Performance Characteristics 8 30 7 25 NEGATIVE Input Current (nA) Input Voltage (±VDC) 6 5 4 POSITIVE 3 2 VCC=15V 20 15 10 5 1 0 0 2 4 6 0 -40 8 -20 0 20 Power Supply Voltage (±VDC) 40 60 80 100 120 Temperature (oC) Figure 4. Input Voltage Range Figure 5. Input Current 4.0 120 110 VCC 3.0 mA A ID 100 2.5 Voltage Gain (dB) Supply Current Drain (mA) 3.5 2.0 1.5 o 1.0 o TA:0 C TO 85 C RL=2KΩ RL=20KΩ 90 80 70 0.5 0.0 60 0 2 4 6 8 10 12 14 16 18 20 0 Power Supply Voltage (V) 2 4 6 8 10 12 14 16 18 20 Power Supply Voltage (V) Figure 6. Supply Current Figure 7. Voltage Gain Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Typical Performance Characteristics (Continued) 110 100 o Output Voltage (V) 90 80 70 60 R 10M 50 0.1uF VCC 40 VO 30 Input Voltage (V) Voltage Gain (dB) VCC =15V RL = 2KΩ o VCC: 10V TO 15VDC TA: -40 C TO 85 C VCC/2 VIN 20 10 0 1HZ 10HZ 100HZ 1kHZ 10kHZ 100kHZ 1MHZ Time (µS) Frequency (Hz) Figure 8. Open Loop Frequency Response Figure 9. Voltage Follower Pulse Response 20 VOUT TA = 25oC R 100K VIN R 1K Output Swing (VP-P) Output Voltage (mV) 50pF VCC = 15V Input Output VIN +7VDC R 2K 10 5 0 1K Time (µS) +15 VDC VO 15 10K 100K 1000K Frequency (Hz) Figure 10. Voltage Follower Pulse Response Figure 11. Large Signal Frequency Response (Small Signal) Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 7 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Typical Performance Characteristics (Continued) 10 o TA = 25 C 7 VCC Output Voltage (V) Output Voltage Referenced to VCC (V) 8 6 VCC/2 VO 5 IO 4 3 1 VCC=5V VCC VCC=15V 0.1 Independent of VCC IO VCC/2 o TA = 25 C 2 1 1E-3 0.01 0.1 Vo 1 10 0.01 1E-3 100 0.01 0.1 1 10 100 Output Sink Current (mA) Output Source Current (mA) Figure 12. Output Characteristics Current Sourcing Figure 13. Output Characteristics Current Sinking 100 90 80 Output Current (mA) IO 70 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 Temperature (oC) Figure 14. Current Limiting Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Typical Application R1 Opto Isolator R6 1/2 AZ358/C AC Line SMPS + Battery Pack GND R7 R5 R4 R3 Current R2 Sense - VCC 1/2 AZ358/C + GND AZ431 R8 Figure 15. Battery Charger R1 910K R1 100K +V1 + R2 100K - +V2 VCC R2 100K 1/2 AZ358/C R3 91K R3 100K + VIN(+) +V4 VO R6 100K +V3 RL R5 1/2 AZ358/C 100K - R4 100K Figure 17. DC Summing Amplifier Figure 16. Power Amplifier Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 9 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Typical Application (Continued) VCC R2 1M R1 100k C1 0.1µF - CO VO 1/2 AZ358/C RB 6.2k + CIN R3 1M AC + 2V - RL 10k R1 2K R2 1/2 AZ358/C R4 100k R5 100k I1 + VCC C2 10µF + 2V - R3 2K R4 3K AV=1+R2/R1 I2 1mA AV=11 (As shown) Figure 19. Fixed Current Sources Figure 18. AC Coupled Non-Inverting Amplifier R1 1M C1 0.01µF 0.001µF R2 100K R1 16K + VO C2 0.01µF 1/2 AZ358/C VO 1/2 AZ358/C - + R3 100K R2 16K VIN - R3 100k V0 R5 100K VCC 0 R4 100 K Figure 20. Pulse Generator f0 R4 100k fo=1KHz Q=1 AV=2 Figure 21. DC Coupled Low-Pass Active Filter Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 10 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 5° 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 2.540(0.100) TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 11 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AZ358/358C Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) 4.800(0.189) 5.000(0.197) 7° 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ 0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 1° 5° 0.330(0.013) 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.190(0.007) 0.250(0.010) Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 12 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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