NCN3411 4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4−Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application, the switch can handle up to two PCIe lanes. Due to the ultra−low ON−state capacitance (2 pF typ) and resistance (7.5 W typ), these switches are ideal for switching high frequency data signals up to a signal bit rate of 8 Gbps. This switch pinout is designed to be used in BTX form factor desktop PCs and is available in a space−saving 3.5 x 9 x 0.75 mm WQFN42 package. http://onsemi.com MARKING DIAGRAM 1 Features • • • • • • • • • • • • NCN3411 AWLYYWWG WQFN42 CASE 510AP VDD Power Supply from 1.5 V to 2.0 V 4 Differential Channels 2:1 MUX/DEMUX Compatible with PCIe 3.0 Data Rate: Supports 8 Gbps Low Crosstalk −30 dB @ 4 GHz Low Bit−to−Bit Skew: 5 ps Low RON Resistance: 13 W max Low CON Capacitance: 2 pF Low Supply Current: 200 mA Off Isolation: −20 dB @ 4 GHz Space Saving Small WQFN−42 Package This is a Pb−Free Device XXXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NCN3411MTTWG Package Shipping† WQFN42 2000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Typical Applications • Notebook Computer • Desktop computer • Server/Storage Area Network PCIe Slot B0 +/− B1 +/− A0 +/− A1 +/− A2 +/− NCN3411 A3 +/− B3 +/− C0 +/− PCIe Slot PCI Express Controller B2 +/− C1 +/− C2 +/− C3 +/− Figure 1. Application Schematic © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 0 1 Publication Order Number: NCN3411/D NCN3411 A0+ B0+ A0− B0− A1+ B1+ A1− B1− C0+ C0− C1+ C1− A2+ B2+ A2− B2− A3+ B3+ A3− B3− C2+ C2− C3+ C3− SEL Figure 2. NCN3411 Functional Block Diagram (Top View) TRUTH TABLE Function SEL AN to BN L AN to CN H http://onsemi.com 2 VDD GND VDD GND 42 41 40 39 NCN3411 GND 1 38 B0+ A0+ 2 37 B0− A0− 3 36 B1+ GND 4 35 B1− VDD 5 34 C0+ A1+ 6 33 C0− A1− 7 32 C1+ VDD 8 31 C1− SEL 9 30 VDD GND 10 29 B2+ A2+ 11 28 B2− A2− 12 27 B3+ VDD 13 26 B3− GND 14 25 C2+ A3+ 15 24 C2− A3− 16 23 C3+ GND 17 22 C3− Exposed Pad on Underside 20 21 VDD GND 19 GND VDD 18 (Connect to Gnd) Figure 3. Pin Description (Top View) http://onsemi.com 3 NCN3411 PIN FUNCTION AND DESCRIPTION Pin Pin Name 2 3 A0+ A0− Signal I/0, Channel 0, Port A Description 6 7 A1+ A1− Signal I/0, Channel 1, Port A 11 12 A2+ A2− Signal I/0, Channel 2, Port A 15 16 A3+ A3− Signal I/0, Channel 3, Port A 38 37 B0+ B0− Signal I/0, Channel 0, Port B 36 35 B1+ B1− Signal I/0, Channel 1, Port B 29 28 B2+ B2− Signal I/0, Channel 2, Port B 27 26 B3+ B3− Signal I/0, Channel 3, Port B 34 33 C0+ C0− Signal I/0, Channel 0, Port C 32 31 C1+ C1− Signal I/0, Channel 1, Port C 25 24 C2+ C2− Signal I/0, Channel 2, Port C 23 22 C3+ C3− Signal I/0, Channel 3, Port C 9 SEL Operational Mode Select (When SEL = 0: A → B, When SEL = 1: A → C) 5, 8, 13, 18, 20, 30, 40, 42 VDD DC Supply: 1.5 V to 2.0 V 1, 4, 10, 14, 17, 19, 21, 39, 41 GND Power Ground Exposed Pad − The exposed pad on the backside of package is internally connected to GND. Externally the pad should also be user−connected to GND. http://onsemi.com 4 NCN3411 MAXIMUM RATINGS Symbol Rating Units Power Supply Voltage Parameter VDD −0.5 to 2.5 VDC Input/Output Voltage Range of the Switch (AN, BN, CN) VIS −0.5 to VDD VDC VSEL −0.5 to VDD VDC Continuous Current Through One Switch Icc ±120 mA Maximum Junction Temperature (Note 1) TJ 150 °C Selection Pin Voltages Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −65 to +150 °C Thermal Resistance, Junction−to−Air RqJA 75 °C/W ILU ±100 mA Human Body Model (HBM) ESD Rating (Note 3) ESD HBM 7000 V Machine Model (MM) ESD Rating (Note 3) ESD MM 400 V MSL Level 1 − Latch−up Current (Note 2) Moisture Sensitivity (Note 4) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. 2. Latch up Current Maximum Rating: ±100 mA per JEDEC standard: JESD78. 3. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) ±7.0 kV per JEDEC standard: JESD22−A114 for all pins. Machine Model (MM) ±400 V per JEDEC standard: JESD22−A115 for all pins. 4. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A. http://onsemi.com 5 NCN3411 DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (TA = −40°C to +85°C, VDD = 1.5 V to 2.0 V, GND = 0V) Symbol Pins Parameters Conditions (Note 5) Min. Typ (Note 6) Max. Units 1.5 1.8 2.0 V 200 300 mA 1.2 V POWER SUPPLY VDD VDD, GND Supply Voltage Range With respect to GND IDD VDD, GND Quiescent Supply Current VDD = 2 V, VSEL = GND or VDD DATA SWITCH PERFORMANCE VIS AN, BN, CN Data Input/Output Voltage Range 0 RON BN On Resistance (BN) VDD = 1.5 V, VIS = 0 V to 1.2 V, IIS = 15 mA 7.5 13 W RON CN On Resistance (CN) VDD = 1.5 V, VIS = 0 V to 1.2 V, IIS = 15 mA 8.0 13 W RON(flat) BN On Resistance Flatness VDD = 1.5 V, VIS = 0 V to 1.2 V, IIS = 15 mA (Note 7) 0.1 1.24 W RON(flat) CN On Resistance Flatness VDD = 1.5 V, VIS = 0 V to 1.2 V, IIS = 15 mA (Note 7) 0.1 1.24 W DRON BN On Resistance Matching(BN) VDD = 1.5 V, VIS = 0 V, IIS = 15 mA (Note 7) 0.35 W DRON CN On Resistance Matching(CN) VDD = 1.5 V, VIS = 0 V, IIS = 15 mA (Note 7) 0.35 W CON AN to BN, AN to CN On Capacitance f = 1 MHz, Switch On, Open Output 2.0 pF COFF AN to BN, AN to CN Off Capacitance f = 1 MHz, Switch Off 1.5 pF ION AN to BN, AN to CN On Leakage Current VDD = 2 V, VAN = 0 V, 1.2 V, Switch On to BN/CN, BN/CN pins are unconnected −1 +1 mA IOFF AN to BN, AN to CN Off Leakage Current VDD = 2 V, VAN = 0 V, 1.2 V, Switch Off to BN/CN, VBN/VCN = 1.2 V, 0 V −1 +1 mA LOGIC INPUT CHARACTERISTICS (SEL Pin) VIH SEL Input HIGH Voltage (Note 7) 0.65 x VDD VDD V VIL SEL Input LOW Voltage (Note 7) 0 0.35 x VDD V VIK SEL Clamp Diode Voltage VDD = Max, ISEL = −18mA −1.2 V IIH SEL Input HIGH Current VDD = Max, VSEL = VDD ±5 mA IIL SEL Input LOW Current VDD = Max, VSEL = GND ±5 mA −0.7 SWITCHING CHARACTERISTICS tSELON SEL, AN, BN/CN Line Enable Time SEL to AN, BN, CN RL = 50 W, CL = 20 pF 8.0 ns tSELOFF SEL, AN, BN/CN Line Disable Time SEL to AN, BN, CN RL = 50 W, CL = 20 pF 5.0 ns tb−b AN, BN/CN Bit−to−bit skew Within the same differential pair 5.0 ps tch−ch AN, BN Channel−to channel skew Maximum skew between all channels 50 ps 5. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 6. Typical values are at VDD = 1.8 V, TA = 25°C ambient and maximum loading. 7. Guaranteed by design and/or characterization. http://onsemi.com 6 NCN3411 DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (TA = −40°C to +85°C, VDD = 1.5 V to 2.0 V, GND = 0V) Symbol Pins Conditions (Note 5) Parameters Min. Typ (Note 6) Max. Units DYNAMIC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE BR AN to BN, AN to CN Signal Bit Rate DIL AN to BN, AN to CN Differential Insertion Loss DCTK AN, BN, CN Differential Crosstalk DISO AN to BN, AN to CN Differential Off Isolation AN to BN, AN to CN Differential Return Loss DRL 8.0 Gbps f = 4 GHz −2.0 dB f = 100 MHz −0.7 dB f = 4 GHz −30 dB f = 100 MHz −58 dB f = 4 GHz −20 dB f = 100 MHz −58 dB f = 4 GHz −9.0 dB f = 100 MHz −22 dB 5. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 6. Typical values are at VDD = 1.8 V, TA = 25°C ambient and maximum loading. 7. Guaranteed by design and/or characterization. TYPICAL OPERATING CHARACTERISTICS Figure 4. Reference PCIe 3.0 Eye Diagram without Switch at 8 Gbps, 800 mVpp Differential Swing Figure 5. PCIe 3.0 Eye Diagram through NCN3411 at 8 Gbps, 800 mVpp Differential Swing http://onsemi.com 7 NCN3411 0 0 −2 −10 −20 −4 −30 MAGNITUDE (dB) MAGNITUDE (dB) TYPICAL OPERATING CHARACTERISTICS −6 −8 −10 −12 −40 −50 −60 −70 −80 −14 −90 −16 100000000 −100 1E+10 100000000 1E+09 1E+09 FREQUENCY (Hz) FREQUENCY (Hz) Figure 6. Differential Insertion Loss Figure 7. Differential Crosstalk 0 1E+10 0 −10 −5 MAGNITUDE (dB) −30 −40 −50 −60 −70 −10 −15 −20 −80 −25 −90 100000000 1E+09 1E+10 100000000 1E+09 FREQUENCY (Hz) FREQUENCY (Hz) Figure 8. Differential Off Isolation Figure 9. Differential Return Loss 9 RON, ON RESISTANCE (W) MAGNITUDE (dB) −20 8.5 8 7.5 7 6.5 6 0 0.2 0.4 0.6 0.8 1 VIS (V) Figure 10. RON vs. VIS http://onsemi.com 8 1.2 1.4 1E+10 NCN3411 PARAMETER MEASUREMENT INFORMATION Figure 11. Differential Insertion Loss (SDD21) and Differential Return Loss (SDD11) Figure 12. Differential Off Isolation (SDD21) tskew = |tPLH1-tPLH2| or |tPHL1-tPHL2| Figure 13. Differential Crosstalk (SDD21) Figure 14. Bit−to−Bit and Channel−to−Channel Skew Figure 15. tON and tOFF Figure 16. Off State Leakage Figure 17. On State Leakage http://onsemi.com 9 NCN3411 PACKAGE DIMENSIONS WQFN42 3.5x9, 0.5P CASE 510AP−01 ISSUE O PIN ONE REFERENCE ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ L L L1 DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS 0.15 C 0.15 C MOLD CMPD DETAIL B TOP VIEW ALTERNATE CONSTRUCTION A 0.10 C A3 DETAIL B A1 SIDE VIEW C SEATING PLANE 17 42X 9.30 42X 0.63 0.10 C A B D2 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.20 0.30 3.50 BSC 1.95 2.15 9.00 BSC 7.45 7.65 0.50 BSC 0.20 −−− 0.30 0.50 0.00 0.15 RECOMMENDED MOUNTING FOOTPRINT* 0.08 C DETAIL A DIM A A1 A3 b D D2 E E2 e K L L1 ÉÉ ÉÉ EXPOSED Cu NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D 0.50 PITCH 3.80 2.16 K 22 1 42X L 0.35 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS 42X b 0.10 C A B 0.05 C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. E2 NOTE 3 1 38 0.10 C A B e e/2 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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