ONSEMI NSIC2050BT3G

NSIC2050BT3G
Constant Current Regulator
& LED Driver for A/C off-line
Applications
120 V, 50 mA + 15%, 3 W Package
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs (similar to Constant Current Diode, CCD).
The CCR is based on Self−Biased Transistor (SBT) technology and
regulates current over a wide voltage range. It is designed with a
negative temperature coefficient to protect LEDs from thermal
runaway at extreme voltages and currents.
The CCR turns on immediately and is at 20% of regulation with
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator.
The 120 V anode−cathode voltage rating is designed to withstand
the high peak voltage incurred in A/C offline applications. The high
anode−cathode voltage also protects surges common in Industrial and
Commercial Signage applications. The CCR comes in thermally
robust packages and is UL94−V0 Certified.
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Ireg(SS) = 50 mA
@ Vak = 7.5 V
Anode 2
Cathode 1
1
Features
•
•
•
•
•
•
•
•
•
Robust Power Package: 2.3 W
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
UL94−V0 Certified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
Also available in 30 mA (NSIC2030BT1G) and 20 mA
(NSIC2020BT1G)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• AC Lighting Panels, Display Signage, Decorative Lighting, Channel
•
•
•
•
•
•
Lettering
Application Note AND8433/D – A/C Application
Application Note AND8493/D – A/C Capacitive Drop Design
Design Note DN05013 – A/C Design
Design Note DN06065 – A/C Design with PFC
Application Notes AND8391/D, AND9008/D − Power Dissipation
Considerations
Automotive Applications − Consult Factory
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 0
1
2
SMB
CASE 403A
MARKING DIAGRAM
1
AYWW
2050G
G
2
2050
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSIC2050BT3G
Package
Shipping†
SMB
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSIC2050B/D
NSIC2050BT3G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Anode−Cathode Voltage
Reverse Voltage
Operating Junction and Storage Temperature Range
ESD Rating:
Human Body Model
Machine Model
Symbol
Value
Unit
Vak Max
120
V
VR
500
mV
TJ, Tstg
−55 to +175
°C
ESD
Class 3A (4000 V)
Class C (400 V)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Ireg(SS)
42.5
50
57.5
mA
48.1
57.4
66.7
mA
Voltage Overhead (Note 2)
Voverhead
Pulse Current @ Vak = 7.5 V (Note 3)
1.
2.
3.
Ireg(P)
1.8
V
Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using 100 mm2 , 1 oz. Cu (or equivalent), in still air.
Voverhead = Vin − VLEDs. Voverhead is typical value for 80% Ireg(SS).
Ireg(P) non−repetitive pulse test. Pulse width t ≤ 360 msec.
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2
NSIC2050BT3G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Reference, Junction−to−Tab (Note 1)
Symbol
Max
Unit
PD
1210
8.0
mW
mW/°C
RθJA
124
17.5
°C/W
°C/W
PD
1282
8.5
mW
mW/°C
RθJA
117
18.2
°C/W
°C/W
PD
1667
11.1
mW
mW/°C
RθJA
90
16.4
°C/W
°C/W
PD
1765
11.8
mW
mW/°C
RθJA
85
16.7
°C/W
°C/W
PD
1948
13
mW
mW/°C
RθJA
77
15.5
°C/W
°C/W
PD
2055
12.7
mW
mW/°C
RθJA
73
15.6
°C/W
°C/W
PD
2149
14.3
mW
mW/°C
RθJA
69.8
14.8
°C/W
°C/W
PD
2269
15.1
mW
mW/°C
RθJA
66.1
14.8
°C/W
°C/W
PD
2609
17.4
mW
mW/°C
RθJA
57.5
13.9
°C/W
°C/W
PD
2500
16.7
mW
mW/°C
RθJA
60
16
°C/W
°C/W
PD
3000
20
mW
mW/°C
RθJA
50
16
°C/W
°C/W
RψJL
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Reference, Junction−to−Tab (Note 2)
RψJL
Total Device Dissipation (Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 3)
Thermal Reference, Junction−to−Tab (Note 3)
RψJL
Total Device Dissipation (Note 4) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 4)
Thermal Reference, Junction−to−Tab (Note 4)
RψJL
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Tab (Note 5)
RψJL
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Tab (Note 6)
RψJL
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Tab (Note 7)
RψJL
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Tab (Note 8)
RψJL
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Tab (Note 9)
RψJL
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Reference, Junction−to−Tab (Note 10)
RψJL
Total Device Dissipation (Note 11) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 11)
Thermal Reference, Junction−to−Tab (Note 11)
RψJL
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
1. 100 mm2, 1 oz. Cu, still air.
2. 100 mm2, 2 oz. Cu, still air.
3. 300 mm2, 1 oz. Cu, still air.
4. 300 mm2, 2 oz. Cu, still air.
5. 500 mm2, 1 oz. Cu, still air.
6. 500 mm2, 2 oz. Cu, still air.
7. 700 mm2, 1 oz. Cu, still air.
8. 700 mm2, 2 oz. Cu, still air.
9. 1000 mm2, 3 oz. Cu, still air.
10. 400 mm2, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.
11. 900 mm2, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.
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3
NSIC2050BT3G
TYPICAL PERFORMANCE CURVES
(Minimum FR−4 @ 100 mm2, 1 oz. Copper Trace, Still Air)
Ireg(SS), STEADY STATE CURRENT (mA)
Ireg, CURRENT REGULATION (mA)
70
60
50
40
30
20
10
0
−10
TA = 25°C
−20
−20
0
20
40
60
80
100
120
140
50
45
40
35
30
≈ −0.130 mA/°C
30
TA = 125°C
Non−Repetitive Pulse Test
limit 175°C (100 mm2, 1 oz Cu)
10
0
DC Test Steady State, Still Air
0
1
3
2
2
3
4
5
6
7
8
9
10 11 12 13 14 15
5
6
7
8
9 10 11 12 13 14 15
56
Vak @ 7.5 V
TA = 25°C
54
52
50
48
46
44
42
48
50
3000
PD, POWER DISSIPATION (mW)
56
55
54
53
52
51
50
10
20
30
40
50
60
54
56
58
60
62
64
66
68
Figure 4. Steady State Current vs. Pulse
Current Testing
Vak @ 7.5 V
TA = 25°C
57
52
Ireg(P), PULSE CURRENT (mA)
58
Ireg, CURRENT REGULATION (mA)
4
58
Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak)
0
TJ(max), maximum die temperature
20
Vak, ANODE−CATHODE VOLTAGE (V)
49
≈ −0.130 mA/°C
TA = 85°C
40
Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
Ireg(SS), STEADY STATE CURRENT (mA)
Ireg(P), PULSE CURRENT (mA)
TA = 25°C
50
Figure 1. General Performance Curve for CCR
TA = 25°C
1
≈ −0.224 mA/°C
Vak, ANODE−CATHODE VOLTAGE (V)
55
25
TA = −55°C
60
Vak, ANODE−CATHODE VOLTAGE (V)
65
60
70
70
500 mm2/2 oz
300 mm2/2 oz
2000
1500
1000
300 mm2/1 oz
100 mm2/2 oz
500
0
−40
80
FR−4 Board
500 mm2/1 oz
2500
100 mm2/1 oz
−20
0
20
40
60
80
100
120
TIME (s)
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Regulation vs. Time
Figure 6. Power Dissipation vs. Ambient
Temperature @ TJ = 1755C: Small Footprint
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NSIC2050BT3G
TYPICAL PERFORMANCE CURVES
(Minimum FR−4 @ 100 mm2, 1 oz. Copper Trace, Still Air)
4500
DENKA K1, 900 mm2/2 oz
POWER DISSIPATION (mW)
4000
FR−4, 1000 mm2/3 oz
3500
3000
DENKA K1, 400 mm2/2 oz
2500
2000
1500
FR−4, 700 mm2/2 oz
1000
FR−4, 700 mm2/1 oz
500
0
−40
−20
0
20
40
60
80
100
120
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Power Dissipation vs. Ambient
Temperature @ TJ = 1755C: Large Footprint
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5
NSIC2050BT3G
APPLICATIONS INFORMATION
not exceed 175°C. The determination will depend on the
thermal pad it is mounted on, the ambient temperature, the
pulse duration, pulse shape and repetition.
The CCR is a self biased transistor designed to regulate the
current through itself and any devices in series with it. The
device has a slight negative temperature coefficient, as
shown in Figure 2 – Tri Temp. (i.e. if the temperature
increases the current will decrease). This negative
temperature coefficient will protect the LEDS by reducing
the current as temperature rises.
The CCR turns on immediately and is typically at 20% of
regulation with only 0.5 V across it.
The device is capable of handling voltage for short
durations of up to 120 V so long as the die temperature does
AC Applications
The CCR is a DC device; however, it can be used with full
wave rectified AC as shown in application notes
AND8433/D and AND8492/D and design notes
DN05013/D and DN06065/D. Figure 8 shows the basic
circuit configuration.
Figure 8. Basic AC Application
Single LED String
The CCR can be placed in series with LEDs as a High Side
or a Low Side Driver. The number of the LEDs can vary
from one to an unlimited number. The designer needs to
calculate the maximum voltage across the CCR by taking the
maximum input voltage less the voltage across the LED
string (Figures 9 and 10).
Figure 10.
Figure 9.
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NSIC2050BT3G
Higher Current LED Strings
Dimming using PWM
Two or more fixed current CCRs can be connected in
parallel. The current through them is additive (Figure 11).
The dimming of an LED string can be easily achieved by
placing a BJT in series with the CCR (Figure 13).
Figure 13.
The method of pulsing the current through the LEDs is
known as Pulse Width Modulation (PWM) and has become
the preferred method of changing the light level. LEDs being
a silicon device, turn on and off rapidly in response to the
current through them being turned on and off. The switching
time is in the order of 100 nanoseconds, this equates to a
maximum frequency of 10 Mhz, and applications will
typically operate from a 100 Hz to 100 kHz. Below 100 Hz
the human eye will detect a flicker from the light emitted
from the LEDs. Between 500 Hz and 20 kHz the circuit may
generate audible sound. Dimming is achieved by turning the
LEDs on and off for a portion of a single cycle. This on/off
cycle is called the Duty cycle (D) and is expressed by the
amount of time the LEDs are on (Ton) divided by the total
time of an on/off cycle (Ts) (Figure 14).
Figure 11.
Other Currents
The adjustable CCR can be placed in parallel with any
other CCR to obtain a desired current. The adjustable CCR
provides the ability to adjust the current as LED efficiency
increases to obtain the same light output (Figure 12).
Figure 14.
Figure 12.
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NSIC2050BT3G
slope of the CCR on/off current can be controlled by the
values of R1 and C1.
The selected delay / slope will impact the frequency that
is selected to operate the dimming circuit. The longer the
delay, the lower the frequency will be. The delay time should
not be less than a 10:1 ratio of the minimum on time. The
frequency is also impacted by the resolution and dimming
steps that are required. With a delay of 1.5 microseconds on
the rise and the fall edges, the minimum on time would be
30 microseconds. If the design called for a resolution of 100
dimming steps, then a total duty cycle time (Ts) of 3
milliseconds or a frequency of 333 Hz will be required.
The current through the LEDs is constant during the period
they are turned on resulting in the light being consistent with
no shift in chromaticity (color). The brightness is in proportion
to the percentage of time that the LEDs are turned on.
Figure 15 is a typical response of Luminance vs Duty Cycle.
6000
ILLUMINANCE (lx)
5000
4000
3000
Thermal Considerations
2000
1000
0
0
As power in the CCR increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design and layout. Mounting pad configuration
on the PCB, the board material, and the ambient temperature
affect the rate of junction temperature rise for the part. When
the device has good thermal conductivity through the PCB,
the junction temperature will be relatively low with high
power applications. The maximum dissipation the device
can handle is given by:
Lux
Linear
10
20
30
40 50
60 70
DUTY CYCLE (%)
80
90 100
Figure 15. Luminous Emmitance vs. Duty Cycle
Reducing EMI
Designers creating circuits switching medium to high
currents need to be concerned about Electromagnetic
Interference (EMI). The LEDs and the CCR switch
extremely fast, less than 100 nanoseconds. To help eliminate
EMI, a capacitor can be added to the circuit across R2.
(Figure 13) This will cause the slope on the rising and falling
edge on the current through the circuit to be extended. The
P D(MAX) +
T J(MAX) * T A
R qJA
Referring to the thermal table on page 2 the appropriate
RqJA for the circuit board can be selected.
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NSIC2050BT3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE H
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.20
2.28
0.10
0.19
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.087
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.090
0.007
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NSIC2050B/D