NTE452 Silicon N−Channel JFET Transistor VHF Amplifier, Mixer TO72 Type Package Description: The NTE452 is a silicon, N−channel junction field effect transistor (JFET) in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers. Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1755C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1755C Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 30 − − V VGS = 20V, VDS = 0 − − 100 pA VGS = 20V, VDS = 0, TA = +1505C − − 200 pA ID = 1nA, VDS = 15V − − 6 V 1.0 − 5.5 V OFF Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage Gate−Source Voltage Gate−Source Forward Voltage V(BR)GSS IG = 15 s, VDS = 0 IGSS VGS(off) VGS ID = 0.5mA, VDS = 15V VGS(f) IG = 1mA, VDS = 0 − − 1.0 V IDSS VDS = 15V, VGS = 0 5 − 15 mA Forward Transfer Admittance |Yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 4500 − Real Part of Forward Transfer Admittance Yfs(real) VDS = 15V, VGS = 0, f = 400MHz 4000 − ON Characteristics (Note 1) Zero−Gate Voltage Drain Current Small−Signal Characteristics 7500 5 mhos − 5 mhos Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 1%. Rev. 10−13 Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VDS = 15V, VGS = 0, f = 100MHz − − 100 5 mhos VDS = 15V, VGS = 0, f = 400MHz − − 1000 5 mhos VDS = 15V, VGS = 0, f = 1kHz − − 50 5 mhos VDS = 15V, VGS = 0, f = 100MHz − − 75 5 mhos VDS = 15V, VGS = 0, f = 400MHz − − 100 5 mhos VDS = 15V, VGS = 0, f = 100MHz − − 2500 5 mhos VDS = 15V, VGS = 0, f = 400MHz − − VDS = 15V, VGS = 0, f = 100MHz − − 1000 5 mhos VDS = 15V, VGS = 0, f = 400MHz − − 4000 5 mhos Small−Signal Characteristics (Cont’d) Real Part of Input Admittance Output Admittance Real Part of Output Admittance Imaginary Part of Input Admittance Imaginary Part of Output Admittance Yis(real) |Yos| Yos(real) Yis(imag) Yos(imag) 10k 5 mhos Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1MHz − − 4.0 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1MHz − − 0.8 pF Common−Source Output Capacitance Coss VDS = 15V, VGS = 0, f = 1MHz − − 2.0 pF NF VDS = 15V, ID = 5mA, Rg f = 100MHz 10003 , − − 2.0 dB VDS = 15V, ID = 5mA, Rg f = 400MHz 10003 , − − 4.0 dB VDS = 15V, ID = 5mA, f = 100MHz 18 − − dB VDS = 15V, ID = 5mA, f = 400MHz 10 − − dB Functional Characteristics Noise Figure Small−Signal Power Gain Common−Source Gps .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min D G S .018 (0.45) Dia Drain Source Gate 455 Case .040 (1.02)