NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant http://onsemi.com RDS(on) MAX V(BR)DSS 16 mW @ 5.0 V 40 V 9.5 mW @ 10 V Applications 51 A D LED Backlight Driver CCFL Backlight DC Motor Control Power Supply Secondary Side Synchronous Rectification G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS "20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS "30 V ID 51 A Parameter Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) TC = 25°C Steady State Pulsed Drain Current TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 40 A, L = 0.1 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 36 PD 47 W IDM 85 A TJ, Tstg −55 to 175 °C IS 30 A EAS 80 mJ TL 260 °C S N−CHANNEL MOSFET 4 1 2 CASE 369C DPAK (Surface Mount) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit °C/W Junction−to−Case (Drain) RqJC 3.2 Junction−to−Ambient − Steady State (Note 1) RqJA 107 1. Surface−mounted on FR4 board using the minimum recommended pad size. 3 YWW 58 05NG • • • • ID MAX 2 1 Drain 3 Gate Source Y WW 5805N G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2012 April, 2012 − Rev. 4 1 Publication Order Number: NTD5805N/D NTD5805N, NVD5805N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 40.8 IDSS Gate−to−Source Leakage Current V VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 3.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance 1.5 7.04 gFS mV/°C VGS = 10 V, ID = 15 A 7.6 9.5 mW VGS = 5.0 V, ID = 10 A 10.9 16 VDS = 15 V, ID = 15 A 8.54 S 1725 pF CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 0 V, f = 1.0 MHz, VDS = 25 V 220 160 33 VGS = 10 V, VDS = 32 V, ID = 30 A 80 nC 2.0 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 7.2 9.8 td(on) 10.2 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 W tf ns 17.9 22.9 4.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.83 TJ = 150°C 0.65 tRR ta tb 24.8 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A QRR http://onsemi.com 2 V ns 14.6 10.2 15.5 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTD5805N, NVD5805N TYPICAL PERFORMANCE CHARACTERISTICS 5.0 V 70 VGS = 7 V − 5.5 V 60 50 40 4.5 V 30 4.0 V 20 10 3.5 V 0 0.5 1 1.5 2 2.5 50 TJ = 100°C 25 TJ = 25°C 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 0.019 0.017 0.015 0.013 0.011 0.009 4 5 6 7 9 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.05 TJ = 25°C 0.04 0.03 VGS = 5 V 0.02 0.01 VGS = 10 V 0 10 15 20 25 30 35 40 45 50 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.9 1.8 1.7 1.6 TJ = −55°C 2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.021 0.007 75 0 3 VGS = 0 V ID = 51 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 5.2 V 80 TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 100 10 V 90 ID, DRAIN CURRENT (A) 100 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 100 10 175 TJ = 150°C 1000 TJ = 100°C 2 12 22 32 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 42 NTD5805N, NVD5805N TYPICAL PERFORMANCE CHARACTERISTICS Ciss 2000 20 40 15 30 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C VDS QT 10 1000 Coss 0 10 5 Vgs Crss 0 5 10 Vds 15 20 25 30 35 40 Qgs Qgd 10 ID = 30 A TJ = 25°C 10 0 30 0 40 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) 30 VDD = 32 V ID = 30 A VGS = 10 V td(off) tf tr 100 td(on) 10 1 10 VGS = 0 V TJ = 25°C 20 10 0 100 0.4 0.6 0.5 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 20 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 1 20 VGS 5 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3000 100 10 ms 100 ms 10 1 0.1 0.1 VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 1 ms 10 ms dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 1.0 NTD5805N, NVD5805N r(t), Effective Transient Thermal Resistance (°C/W) TYPICAL PERFORMANCE CHARACTERISTICS 10 D = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (s) Figure 12. Thermal Response ORDERING INFORMATION Package Shipping† NTD5805NT4G DPAK (Pb−Free) 2500 / Tape & Reel NVD5805NT4G DPAK (Pb−Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD5805N, NVD5805N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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