ONSEMI NTB5411NT4G

NTB5411N, NTP5411N
Power MOSFET
80 Amps, 60 Volts
N-Channel D2PAK, TO-220
Features
•
•
•
•
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Low RDS(on)
High Current Capability
Avalanche Energy Specified
These are Pb−Free Devices
V(BR)DSS
60 V
Applications
•
•
•
•
ID MAX
(Note 1)
RDS(ON) MAX
80 A
10 mW @ 10 V
LED Lighting and LED Backlight Drivers
DC−DC Converters
DC Motor Drivers
Power Supplies Secondary Side Synchronous Rectification
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
VGS
$30
V
ID
80
A
Continuous Drain
Current RqJC
(Note 1)
Steady
State
Power Dissipation
RqJC (Note 1)
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
TC = 25°C
PD
166
4
TJ, Tstg
−55 to
175
°C
IS
75
A
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 75 A,
L = 0.1 mH, RG = 25 W)
EAS
280
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
260
°C
1
2
Parameter
Symbol
Max
Unit
RqJC
0.9
°C/W
RqJA
43
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
D2PAK
CASE 418B
STYLE 2
TO−220AB
CASE 221A
STYLE 5
3
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTB
5411NG
AYWW
NTP
5411NG
AYWW
THERMAL RESISTANCE RATINGS
Junction−to−Case (Drain) Steady State
(Note 1)
2
3
W
A
Source Current (Body Diode)
4
1
185
Operating and Storage Temperature Range
S
61
IDM
tp = 10 ms
G
1
Gate
3
Source
2
Drain
1
Gate
G
A
Y
WW
2
Drain
3
Source
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 2
1
Publication Order Number:
NTB5411N/D
NTB5411N, NTP5411N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
V(BR)DSS/TJ
IDSS
V
54.2
VGS = 0 V
VDS = 60 V
mV/°C
TJ = 25°C
10
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = $20 V
VGS(th)
VGS = VDS, ID = 250 mA
$100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Voltage
VGS(th)/TJ
2.0
3.2
VDS(on)
VGS = 10 V, ID = 80 A
0.71
VGS = 10 V, ID = 40 A, 150°C
0.65
RDS(on)
VGS = 10 V, ID = 40 A
8.4
gFS
VGS = 15 V, ID = 40 A
70
Input Capacitance
Ciss
3365
Output Capacitance
Coss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Transfer Capacitance
Crss
Static Drain−to−Source On−Resistance
Forward Transconductance
4.0
6.6
V
mV/°C
0.92
V
10
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
4500
pF
130
nC
615
230
VGS = 10 V, VDS = 48 V,
ID = 80 A
Total Gate Charge
QG(TOT)
92
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
19
Gate−to−Drain Charge
QGD
43
4.1
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
VGS = 10 V, VDD = 48 V,
ID = 80 A, RG = 9.1 W
ns
22
122
td(off)
116
tf
113
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V
IS = 37.5 A
TJ = 25°C
0.91
TJ = 150°C
0.8
IS = 37.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
19
QRR
0.15
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
62
1.1
Vdc
ns
43
mC
NTB5411N, NTP5411N
TYPICAL PERFORMANCE CURVES
10 V
ID, DRAIN CURRENT (A)
120
140
TJ = 25°C
6.5 V
7V
100
80
5.5 V
60
40
20
VGS = 4.5 V
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
VDS w 10 V
120
6V
ID, DRAIN CURRENT (A)
140
100
80
60
TJ = 25°C
40
TJ = 125°C
20
0
3.0
4.0
3.5
15
ID = 40 A
TJ = 25°C
13
12
11
10
9
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
5.5
6.0
6.5
TJ = 25°C
11
10
VGS = 10 V
9
8
7
6
5
10
30
50
70
90
110
130 150
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
2.4
ID = 40 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
2
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
5.0
12
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.2
4.5
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 1. On−Region Characteristics
8
4.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
14
TJ = −55°C
1.8
1.6
1.4
1.2
1
TJ = 125°C
100
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
30
35
40
45
50
55 60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTB5411N, NTP5411N
TYPICAL PERFORMANCE CURVES
VGS = 0 V
TJ = 25°C
6000
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
7000
5000
4000
Ciss
3000
2000
1000
0
0
Coss
Crss
10
20
30
40
50
60
10
QT
9
8
7
Q1
6
Q2
5
4
3
2
VDS = 48 V
ID = 80 A
TJ = 25°C
1
0
0
10
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
1
IS, SOURCE CURRENT (A)
t, TIME (ns)
10
70
80
90
td(off)
td(on)
1
10
50
40
30
20
10
0
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
300
10 ms
100
1 ms
100 ms
ID = 75 A
10 ms
250
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
60
VGS = 0 V
TJ = 25°C
60
RG, GATE RESISTANCE (W)
dc
10
0 V ≤ VGS ≤ 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
50
70
tr
tf
40
Figure 8. Gate−to−Source Voltage vs. Total
Charge
VDD = 48 V
ID = 80 A
VGS = 10 V
100
30
Qg, TOTAL GATE CHARGE (nC)
0.1
1
10
200
150
100
50
0
25
100
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NTB5411N, NTP5411N
TYPICAL PERFORMANCE CURVES
100
D = 0.5
r(t), (°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTP5411NG
TO−220AB
(Pb−Free)
50 Units / Rail
NTB5411NT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTB5411N, NTP5411N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
1
2
A
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
H
M
T B
M
N
R
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
P
U
L
M
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTB5411N, NTP5411N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Sales Representative
NTB5411N/D