SSM6J414TU
MOSFETs
Silicon P-Channel MOS (U-MOS)
SSM6J414TU
1. Applications
•
Power Management Switches
2. Features
(1)
1.5-V gate drive voltage.
(2)
Low drain-source on-resistance
: RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 26 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 22.5 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Configuration
1, 2, 5, 6: Drain
3: Gate
4: Source
UF6
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)
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
25
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
Drain current (DC)
Drain current (pulsed)
(Note 1)
Power dissipation
(Note 2)
ID
-6
IDP
-14
A
PD
1
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 10 ms, duty ≤ 1%
Note 2: Device mounted on a FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note:
Note:
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the power dissipation, PD, vary according to the
board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
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5. Electrical Characteristics
unless otherwise specified)
5.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
Drain cut-off current
Test Condition
IGSS
VGS = ±8 V, VDS = 0 V
IDSS
VDS = -20 V, VGS = 0 V
Typ.
Max
Unit
±1
µA
-1
-20
(Note 1) V(BR)DSX ID = -1 mA, VGS = 5 V
-15
(Note 2)
-0.3
-1.0
RDS(ON) ID = -6.0 A, VGS = -4.5 V
18
22.5
ID = -5.5 A, VGS = -2.5 V
21
26
ID = -3.0 A, VGS = -1.8 V
25
36
ID = -1.5 A, VGS = -1.5 V
29
54
VDS = -3 V, ID = -2.0 A
9.1
18.2
Drain-source breakdown voltage
V(BR)DSS ID = -1 mA, VGS = 0 V
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
(Note 3)
Forward transfer admittance
Min
(Note 3)
Vth
|Yfs|
VDS = -3 V, ID = -1 mA
V
mΩ
S
Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for
this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
unless otherwise specified)
25
5.2. Dynamic Characteristics (Ta = 25
Characteristics
Symbol
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time (turn-on time)
ton
Switching time (turn-off time)
toff
Test Condition
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDD = -10 V, ID = -2.0 A
VGS = 0 to -2.5 V, RG = 4.7 Ω,
Duty ≤ 1%, Input: tr, tf < 5 ns
Common source, See Chapter 5.3
Min
Typ.
Max
Unit
1650
pF
90
220
77
206
ns
5.3. Switching Time Test Circuit
Fig. 5.3.1 Test Circuit of Switching Time
Fig. 5.3.2 Input Waveform/Output Waveform
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unless otherwise specified)
5.4. Gate Charge Characteristics (Ta = 25
25
Characteristics
Symbol
Total gate charge (gate-source plus gate-drain)
Qg
Gate-source charge 1
Qgs1
Gate-drain charge
Qgd
Test Condition
VDD = -10 V, VGS = -4.5 V,
ID = -6.0 A
Min
Typ.
Max
Unit
23.1
nC
3.8
4.1
unless otherwise specified)
5.5. Source-Drain Characteristics (Ta = 25
25
Characteristics
Diode forward voltage
Symbol
(Note 1)
VDSF
Test Condition
ID = 6.0 A, VGS = 0 V
Min
Typ.
Max
Unit
0.74
1.2
V
Note 1: Pulse measurement.
6. Marking
Fig. 6.1 Marking
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7. Characteristics Curves (Note)
Fig. 7.1 ID - VDS
Fig. 7.2 ID - VGS
Fig. 7.3 RDS(ON) - VGS
Fig. 7.4 RDS(ON) - ID
Fig. 7.5 RDS(ON) - Ta
Fig. 7.6 Vth - Ta
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Fig. 7.7 |Yfs| - ID
Fig. 7.8 IDR - VDS
Fig. 7.9 C - VDS
Fig. 7.10 t - ID
Fig. 7.11 Dynamic Input/Output Characteristics
Fig. 7.12 rth - tw
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Fig. 7.13 PD - Ta
Note:
Fig. 7.14 Safe Operating Area
The above characteristics curves are presented for reference only and not guaranteed by production test.
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Package Dimensions
Unit: mm
Weight: 7.0 mg (typ.)
Package Name(s)
TOSHIBA: 2-2T1S
Nickname: UF6
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