TPC6067
MOSFETs
Silicon N-Channel MOS (U-MOS)
TPC6067
1. Applications
•
Lithium-Ion Secondary Batteries
•
Power Management Switches
2. Features
(1)
Small, thin package
(2)
Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ.) (VGS = 10 V)
(3)
Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(4)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1, 2, 5, 6:Drain
3: Gate
4: Source
VS-6
unless otherwise specified)
25
4. Absolute Maximum Ratings (Note) (Ta = 25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Symbol
Rating
Unit
VDSS
30
V
VGSS
±20
(Note 1)
ID
6
A
(Note 1)
IDP
24
Power dissipation
(t = 5 s)
(Note 2)
PD
2.2
Power dissipation
(t = 5 s)
(Note 3)
PD
0.7
W
(Note 4)
EAS
28
mJ
Single-pulse avalanche energy
W
Avalanche current
IAR
6
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-ambient thermal resistance
(t = 5 s)
(Note 2)
Rth(ch-a)
56.8
/W
Channel-to-ambient thermal resistance
(t = 5 s)
(Note 3)
Rth(ch-a)
178
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = 24 V, Tch = 25 (initial), L = 0.605 mH, RG = 1 Ω, IAR = 6 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Note:
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
This transistor is sensitive to electrostatic discharge and should be handled with care.
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unless otherwise specified)
6. Electrical Characteristics (Ta = 25
25
6.1. Static Characteristics
Characteristics
Symbol
Gate leakage current
Test Condition
IGSS
VGS = ±20 V, VDS = 0 V
Drain cut-off current
Min
Typ.
Max
Unit
±0.1
µA
IDSS
VDS = 30 V, VGS = 0 V
10
Drain-source breakdown voltage
V(BR)DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V(BR)DSX
ID = 10 mA, VGS = -20 V
15
Vth
VDS = 10 V, ID = 0.1 mA
1.3
2.3
VGS = 4.5 V, ID = 3 A
23
29
VGS = 10 V, ID = 3 A
18
23
Min
Typ.
Max
Unit
610
pF
Gate threshold voltage
Drain-source on-resistance
RDS(ON)
V
mΩ
6.2. Dynamic Characteristics
Characteristics
Symbol
Input capacitance
Ciss
Test Condition
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
34
Output capacitance
Coss
130
Switching time (rise time)
tr
3.5
Switching time (turn-on time)
ton
8.8
tf
6.2
toff
22
Min
Typ.
Max
Unit
8
nC
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1.
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics
Characteristics
Symbol
Total gate charge (gate-source plus
gate-drain)
Test Condition
VDD ≈ 24 V, VGS = 10 V, ID = 6 A
Qg
Gate-source charge 1
Qgs1
2.2
Gate-drain charge
Qgd
1.1
Min
Typ.
Max
Unit
6.4. Source-Drain Characteristics
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
Symbol
(Note 5)
Test Condition
IDRP
24
A
VDSF
IDR = 6 A, VGS = 0 V
-1.2
V
Note 5: Ensure that the channel temperature does not exceed 150.
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta
(Guaranteed Maximum)
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Fig. 8.12 rth - tw
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 0.011 g (typ.)
Package Name(s)
Nickname: VS-6
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
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the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
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