MT3S20TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 MU 1 3 2 0.7±0.05 Marking 1 0.166±0.05 High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 0.65±0.05 Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz) • 2.0±0.1 • +0.1 0.3 -0.05 1.7±0.1 FEATURES 1.BASE 2.EMITTER 3.COLLECTOR UFM 2 JEDEC JEITA TOSHIBA 2-2U1B Weight: 6.6mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 1.5 V Collector current IC 80 mA Base current IB 10 mA PC(Note1) 900 mW Tj 150 °C Tstg −55 to 150 °C Collector power dissipation Junction temperature Storage temperature range Note.1 : The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-09 MT3S20TU Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Symbol Noise figure Typ Max Unit GHz VCE=5V,IC=30mA 5 7 ⎯ VCE=5V,IC=50mA,f=500MHz ⎯ 17.5 ⎯ 2 |S21e| (2) VCE=5V,IC=50mA,f=1GHz 10 12 ⎯ NF VCE=5V,IC=20mA,f=1GHz ⎯ 1.45 2 dB 26 30 ⎯ dBmW Min Typ Max Unit rd 3 order intermodulation distortion output intercept point Min 2 fT |S21e| (1) Insertion gain Test Condition OIP3 VCE=5V,IC=50mA,f=500MHz, ⊿f=1MHz dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB=10V,IE=0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB=1V,IC=0 ⎯ ⎯ 0.5 μA DC current gain hFE VCE=5V,IC=50mA 100 150 200 ⎯ Reverse transfer capacitance Cre VCB=5V,IE=0, f=1MHz (Note3) ⎯ 0.75 1 pF Note.3 : Cre is measured using a 3-terminal method with capacitance bridge Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 2 2009-12-09 MT3S20TU hFE-IC 100 COMMON EMITTER ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 100 10 1 10 COMMON EMITTER ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 10 Collector-current IC(mA) DC current gain hFE 1000 IC-VBE 1 0.1 0.01 0.001 100 0 Collector-current IC(mA) 0.2 0.4 0.6 0.8 1 Base-emitter voltage VBE(V) IC-VCE fT-IC 8 560μA 480μA 400μA 60 320μA 40 240μA 160μA 20 80μA 0 0 3 6 9 12 ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 7 6 5 4 3 2 1 0 15 1 10 Collector-emitter voltage VCE(V) Collector-current IC(mA) |S21e|2-IC 20 ＶＣＥ＝５Ｖ Ｔａ＝２５℃ NF, Ga -IC 4 f=500MHz 14 12 10 f=1000MHz 8 6 4 2 10 Ｇａ 14 3 12 2.5 10 2 8 1.5 ＮＦ 6 1 4 0.5 2 0 0 100 0 1 16 ＶＣＥ＝５Ｖ ｆ＝１ＧＨｚ Ｔａ＝２５℃ 3.5 16 Noise figure NF(dB) Insertion gain |S21e|2(dB) 18 100 100 1 Collector-current IC(mA) 10 Associated gain Ga(dB) Collector-current IC(mA) IB=800μA 720μA 640μA 80 Transition frequency fT(GHz) ＣＯＭＭＯＮ ＥＭＩＴＴＥＲ Ｔａ＝２５℃ 100 Collector-current IC(mA) 3 2009-12-09 MT3S20TU ＩＥ＝０ ｆ＝１ＭＨｚ Ｔａ＝２５℃ 2.5 2 Cob 1.5 Cre 1 0.5 0 0.1 1 10 Third order intermodulation distortion output intercept point OIP3(dBmW) OIP3-IC 3 Output capacitance Cob(pF) Reverse transfer capacitance Cre(pF) Cre,Cob-VCB Collector-base voltage VCB(V) 38 36 34 32 VCE=5V 30 28 VCE=4V 26 24 22 Ｐｉｎ＝－１５ｄＢｍＷ ｆ＝５００ＭＨｚ （⊿１ＭＨｚ） Ｔａ＝２５℃ 20 18 10 100 Collector-current IC(mA) Collector power dissipation PC(mW) PC-Ta 1000 900 The device is mounted on a ceramicboard(25.4mm×25.4mm×0.8mm(t)) 800 700 600 500 400 Device only 300 200 100 0 0 25 50 75 100 125 150 Ambient temperature Ta(°C) 4 2009-12-09 MT3S20TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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