ISSI IS49NLS96400

IS49NLS96400,IS49NLS18320
576Mb (x9, x18) Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION
JULY 2012
FEATURES 
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533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at 533 MHz clock frequency) Reduced cycle time (15ns at 533MHz) 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) 8 internal banks Non‐multiplexed addresses (address multiplexing option available) SRAM‐type interface Programmable READ latency (RL), row cycle time, and burst sequence length Balanced READ and WRITE latencies in order to optimize data bus utilization 
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Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK. Differential input clocks (CK, CK#) Differential input data clocks (DKx, DKx#) On‐die DLL generates CK edge‐aligned data and output data clock signals Data valid signal (QVLD) HSTL I/O (1.5V or 1.8V nominal) 25‐60Ω matched impedance outputs 2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O On‐die termination (ODT) RTT IEEE 1149.1 compliant JTAG boundary scan Operating temperature: Commercial (TC = 0° to +95°C; TA = 0°C to +70°C), Industrial (TC = ‐40°C to +95°C; TA = ‐40°C to +85°C)
OPTIONS 
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Package:  144‐ball FBGA (leaded)  144‐ball FBGA (lead‐free) Configuration:  64Mx9  32Mx18 Clock Cycle Timing: Speed Grade ‐18 ‐25E ‐25 ‐33 Unit tRC 15 15 20 20 ns tCK 1.875 2.5 2.5 3.3 ns Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances RLDRAM is a registered trademark of Micron Technology, Inc. Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00E, 06/20/2012
1
IS49NLS96400,IS49NLS18320
1 Package Ballout and Description 1.1 576Mb (64Mx9) Separate I/O BGA Ball‐out (Top View) 1
2
3
A
VREF
VSS
B
VDD
DNU
C
VTT
DNU
D
A22
1
DNU
E
A21
DNU
F
A5
DNU
G
A8
H
BA2
J
2
NF
4
VEXT
5
6
7
8
9
10
11
12
VSS
VSS
VEXT
TMS
TCK
3
VSSQ
VSSQ
Q0
D0
VDD
3
VDDQ
VDDQ
Q1
D1
VTT
3
DNU
3
DNU
3
VSSQ
VSSQ
QK0#
QK0
VSS
3
VDDQ
VDDQ
Q2
D2
A20
DNU
3
VSSQ
VSSQ
Q3
D3
QVLD
A6
A7
VDD
VDD
A2
A1
A0
A9
VSS
VSS
VSS
VSS
A4
A3
2
VDD
VDD
VDD
VDD
BA0
CK
NF
3
DNU
3
DNU
3
K
DK
DK#
VDD
VDD
VDD
VDD
BA1
CK#
L
REF#
CS#
VSS
VSS
VSS
VSS
A14
A13
M
WE#
A16
N
A18
DNU
P
A15
DNU
A17
VDD
VDD
A12
A11
A10
3
VSSQ
VSSQ
Q4
D4
A19
3
VDDQ
VDDQ
Q5
D5
DM
3
DNU
3
DNU
3
3
DNU
3
DNU
VSSQ
VSSQ
Q6
D6
VSS
3
VDDQ
VDDQ
Q7
D7
VTT
3
3
R
VSS
DNU
T
VTT
DNU
U
VDD
DNU
DNU
VSSQ
VSSQ
Q8
D8
VDD
V
VREF
ZQ
VEXT
VSS
VSS
VEXT
TDO
TDI
Symbol
VDD
VSS
VDDQ
VSSQ
VEXT
VREF
VTT
A*
BA*
D*
Q*
DK*
QK*
CK*
DM
CS#,WE#,REF#
ZQ
QVLD
DNU,NF
T*
Total
Description
Supply voltage
Ground
DQ power supply
DQ Ground
Supply voltage
Reference voltage
Termination voltage
Address ‐ A0‐22
Banks ‐ BA0‐2
Input data
Output data
Input data clock(Differential inputs)
Output data clocks(outputs)
Input clocks (CK, CK#)
Input data mask
Command control pins
External impedance (25–60Ω)
Data valid
Do not use, No function
JTAG ‐ TCK,TMS,TDO,TDI
Ball count
16
16
8
12
4
2
4
23
3
9
9
2
2
2
1
3
1
1
22
4
144
Notes:
NOTES:
1. Reserved for future use. This may optionally be 1) Reserved for future use. This may
connected to GND.
optionally
be connected to GND.
2. No function. This signal is internally connected and 2)
Reserved for future use. This signal is
has parasitic characteristics of a clock input signal. internally
connected and has parasitic
This may optionally be connected to GND.
3. Do not use. This signal is internally connected and characteristics
of an address input signal.
has parasitic characteristics of a I/O. This may This
may optionally be connected to
optionally be connected to GND. Note that if ODT is GND.
enabled, these pins are High‐Z.
3) No function. This signal is internally
connected and has parasitic
characteristics of a clock input signal.
This may optionally be connected to
GND.
4) Do not use. This signal is internally
connected and has parasitic
characteristics of a I/O. This may
optionally be connected to GND. Note
that if ODT is enabled, these pins will be
connected to VTT.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00E, 06/20/2012
2
IS49NLS96400,IS49NLS18320
1.2 576Mb (32Mx18) Separate I/O BGA Ball‐out (Top View) A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
1
VREF
VDD
VTT
A221
A212
A5
A8
BA2
NF3
DK
REF#
WE#
A18
A15
VSS
VTT
VDD
VREF
Symbol
VDD
VSS
VDDQ
VSSQ
VEXT
VREF
VTT
A*
BA*
D*
Q*
DK*
QK*
CK*
DM
CS#,WE#,REF#
ZQ
QVLD
NF
T*
Total
2
VSS
D4
D5
D6
D7
D8
A6
A9
NF3
DK#
CS#
A16
D14
D15
QK1
D16
D17
ZQ
3
VEXT
Q4
Q5
Q6
Q7
Q8
A7
VSS
VDD
VDD
VSS
A17
Q14
Q15
QK1#
Q16
Q17
VEXT
4
VSS
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDD
VSS
VDD
VDD
VSS
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VSS
Description
Supply voltage
Ground
DQ power supply
DQ Ground
Supply voltage
Reference voltage
Termination voltage
Address ‐ A0‐22
Banks ‐ BA0‐2
Input data
Output data
Input data clock(Differential inputs)
Output data clocks(outputs)
Input clocks (CK, CK#)
Input data mask
Command control pins
External impedance (25–60Ω)
Data valid
Do not use, No function
JTAG ‐ TCK,TMS,TDO,TDI
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00E, 06/20/2012
5
6
7
8
Ball count
16
16
8
12
4
2
4
23
3
18
18
2
4
2
1
3
1
1
2
4
144
9
VSS
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDD
VSS
VDD
VDD
VSS
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VSS
10
VEXT
Q0
Q1
QK0#
Q2
Q3
A2
VSS
VDD
VDD
VSS
A12
Q9
Q10
Q11
Q12
Q13
VEXT
11
TMS
D0
D1
QK0
D2
D3
A1
A4
BA0
BA1
A14
A11
D9
D10
D11
D12
D13
TDO
12
TCK
VDD
VTT
VSS
A20
QVLD
A0
A3
CK
CK#
A13
A10
A19
DM
VSS
VTT
VDD
TDI
Notes:
NOTES:
1. Reserved for future use. This may optionally be 1) Reserved for future use. This may
connected to GND.
optionally be connected to GND.
2. Reserved for future use. This signal is internally 2) Reserved for future use. This signal is
connected and has parasitic characteristics of an address internally connected and has parasitic
input signal. This may optionally be connected to GND.
3. No function. This signal is internally connected and characteristics of an address input signal.
has parasitic characteristics of a clock input signal. This This may optionally be connected to GND.
may optionally be connected to GND.
3) No function. This signal is internally
connected and has parasitic characteristics
of a clock input signal. This may optionally
be connected to GND.
4) Do not use. This signal is internally
connected and has parasitic characteristics
of a I/O. This may optionally be connected
to GND. Note that if ODT is enabled, these
pins will be connected to VTT.
3
IS49NLS96400,IS49NLS18320
1.3 Ball Descriptions Symbol Type A* Input Address inputs: Defines the row and column addresses for READ and WRITE operations. During a MODE REGISTER SET, the address inputs define the register settings. They are sampled at the rising edge of CK. BA* Input Bank address inputs: Selects to which internal bank a command is being applied to. CK, CK# Input Input clock: CK and CK# are differential input clocks. Addresses and commands are latched on the rising edge of CK. CK# is ideally 180 degrees out of phase with CK. CS# Input Chip select: CS# enables the command decoder when LOW and disables it when HIGH. When the command decoder is disabled, new commands are ignored, but internal operations continue. D* Input Data input: The D signals form the input data bus. During WRITE commands, the data is sampled at both edges of DK. DK, DK# Input Input data clock: DK* and DK*# are the differential input data clocks. All input data is referenced to both edges of DK*. DK*# is ideally 180 degrees out of phase with DK*. For both the x9 and x18 devices, all D signals are referenced to DK and DK#. DK and DK# pins must always be supplied to the device. DM Input Input data mask: The DM signal is the input mask signal for WRITE data. Input data is masked when DM is sampled HIGH. DM is sampled on both edges of DK. Tie signal to ground if not used. Description TCK Input IEEE 1149.1 clock input: This ball must be tied to VSS if the JTAG function is not used. TMS,TDI Input IEEE 1149.1 test inputs: These balls may be left as no connects if the JTAG function is not used. WE#, REF# Input Command inputs: Sampled at the positive edge of CK, WE# and REF# define (together with CS#) the command to be executed. VREF Input Input reference voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers. ZQ I/O Q* Output External impedance (25–60Ω): This signal is used to tune the device outputs to the system data bus impedance. Q output impedance is set to 0.2 × RQ, where RQ is a resistor from this signal to ground. Connecting ZQ to GND invokes the minimum impedance mode. Data input: The Q signals form the output data bus. During READ commands, the data is referenced to both edges of QK*. QK*, QK*# Output data clocks: QK* and QK*# are opposite polarity, output data clocks. They are free running, and during READs, are edge‐aligned with data output from the memory. QK*# is ideally 180 degrees out of Output phase with QK*. For the x18 device, QK0 and QK0# are aligned with Q0‐Q8, while QK1 and QK1# are aligned with Q9‐Q17. For the x9 device, all Q signals are aligned with QK0 and QK0#. QVLD Output Data valid: The QVLD pin indicates valid output data. QVLD is edge‐aligned with QK* and QK*#. TDO Output IEEE 1149.1 test output: JTAG output. This ball may be left as no connect if the JTAG function is not used. VDD Supply Power supply: Nominally, 1.8V. VDDQ Supply DQ power supply: Nominally, 1.5V or 1.8V. Isolated on the device for improved noise immunity. VEXT Supply Power supply: Nominally, 2.5V. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. VTT A22 Supply ‐ Power supply: Isolated termination supply. Nominally, VDDQ/2. Reserved for future use: This signal is not connected and can be connected to ground. DNU ‐ Do not use: These balls may be connected to ground. Note that if ODT is enabled, these pins are High‐Z. NF ‐ No function: These balls can be connected to ground. Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00E, 06/20/2012
4
IS49NLS96400,IS49NLS18320
2 Electrical Specifications 2.1 Absolute Maximum Ratings Item I/O Voltage Voltage on VEXT supply relative to VSS Voltage on VDD supply relative to VSS Voltage on VDDQ supply relative to VSS Min
0.3
0.3
0.3
0.3
Max VDDQ + 0.3 2.8 2.1 2.1 Units
V
V
V
V
Note: Stress greater than those listed in this table may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2.2 DC Electrical Characteristics and Operating Conditions Description Conditions
Supply voltage Supply voltage Isolated output buffer supply Reference voltage Termination voltage Input high voltage Input low voltage Symbol
Min
Max Units
Notes
VEXT VDD VDDQ VREF VTT VIH VIL 2.38 1.7 1.4 0.49 x VDDQ 0.95 x VREF VREF + 0.1 VSSQ  0.3 (VDDQ/2)/ (1.15 x RQ/5)
(VDDQ/2)/ (1.15 x RQ/5)
 5  5  5  5 2.63 1.9 VDD 0.51 x VDDQ 1.05 x VREF VDDQ + 0.3 VREF  0.1 (VDDQ/2)/ (0.85 x RQ/5) (VDDQ/2)/ (0.85 x RQ/5) 5 5 5 5 V V V V V V V 2 2,3 4,5,6 7,8 2 2 9, 10, 11 9, 10, 11 Output high current VOH = VDDQ/2 IOH Output low current VOL = VDDQ/2 IOL 0V ≤ VIN ≤ VDD 0V ≤ VIN ≤ VDD 0V ≤ VIN ≤ VDDQ ILC ILI ILO IREF Clock input leakage current Input leakage current Output leakage current Reference voltage current A A µA µA µA µA Notes: 1. All voltages referenced to VSS (GND). 2. Overshoot: VIH (AC) ≤ VDD + 0.7V for t ≤ tCK/2. Undershoot: VIL (AC) ≥ –0.5V for t ≤ tCK/2. During normal operation, VDDQ must not exceed VDD. Control input signals may not have pulse widths less than tCK/2 or operate at frequencies exceeding tCK (MAX). 3. VDDQ can be set to a nominal 1.5V ± 0.1V or 1.8V ± 0.1V supply. 4. Typically the value of VREF is expected to be 0.5 x VDDQ of the transmitting device. VREF is expected to track variations in VDDQ. 5. Peak‐to‐peak AC noise on VREF must not exceed ±2 percent VREF (DC). 6. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak‐to‐peak noise (non‐common mode) on VREF may not exceed ±2 percent of the DC value. Thus, from VDDQ/2, VREF is allowed ±2 percent VDDQ/2 for DC error and an additional ±2 percent VDDQ/2 for AC noise. This measurement is to be taken at the nearest VREF bypass capacitor. 7. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF. 8. On‐die termination may be selected using mode register A9 (for non‐multiplexed address mode) or Ax9 (for multiplexed address mode). A resistance RTT from each data input signal to the nearest VTT can be enabled. RTT = 125–185Ω at 95°C TC. 9. IOH and IOL are defined as absolute values and are measured at VDDQ /2. IOH flows from the device, IOL flows into the device. 10. If MRS bit A8 or Ax8 is 0, use RQ = 250Ω in the equation in lieu of presence of an external impedance matched resistor. 2.3 Capacitance (TA = 25 °C, f = 1MHz) Parameter Address / Control Input capacitance I/O, Output, Other capacitance (D, Q, DM, QK, QVLD)
Clock Input capacitance JTAG pins Symbol
CIN
CIO
CCLK
CJ
Test Conditions
VIN=0V
VIO=0V
VCLK=0V
VJ=0V
Min 1.5 3.5 2 2 Max
2.5
5
3
5
Units
pF
pF
pF
pF
Note. These parameters are not 100% tested and capacitance is not tested on ZQ pin. Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00E, 06/20/2012
5
IS49NLS96400,IS49NLS18320
2.4 Operating Conditions and Maximum Limits Description Condition Standby current tCK = idle; All banks idle; No inputs toggling Active standby current CS# =1; No commands; Bank address incremented and half address/data change once every 4 clock cycles BL=2; Sequential bank access; Bank transitions once every tRC; Half address transitions once every tRC; Read followed by write sequence; continuous data during WRITE commands BL = 4; Sequential bank access; Bank transitions once Operational every tRC; Half address transitions once every tRC; Read current followed by write sequence; Continuous data during WRITE commands BL = 8; Sequential bank access; Bank transitions once every tRC; half address transitions once every tRC; Read followed by write sequence; continuous data during WRITE commands Burst Eight‐bank cyclic refresh; Continuous address/data; refresh Command bus remains in refresh for all eight banks current Distributed Single‐bank refresh; Sequential bank access; Half refresh address transitions once every tRC, continuous data current Operating burst write current Operating burst read current Symbol ‐18 ‐25E ‐25 ‐33 units
ISB1(VDD) x9/x18 55 53 48 48 mA ISB1(VEXT) 5 5 5 5 mA ISB2(VDD) x9/x18 365 293 288 233 mA ISB2(VEXT) 5 5 5 5 mA IDD1(VDD) x9/x18 465 380 348 305 mA IDD1(VEXT) 15 15 15 13 mA IDD2(VDD) x9/x18 475 400 362 319 mA IDD2(VEXT) 15 15 15 13 mA IDD3 (VDD) x9/x18 505 430 408 368 mA IDD3(VEXT) 20 20 20 18 mA IREF1(VDD) x9/x18 995 790 785 615 mA IREF1(VEXT) 80 80 80 70 mA IREF2(VDD) x9/x18 425 330 325 267 mA IREF2(VEXT) 20 20 20 18 mA 980 970 819 mA BL=2; Cyclic bank access; Half of address bits change every clock cycle; Continuous data; measurement is taken during continuous WRITE IDD2W(VDD) x9/x18 1335 IDD2W(VEXT) 50 50 50 40 mA BL=4; Cyclic bank access; Half of address bits change every 2 clock cycles; Continuous data; Measurement is taken during continuous WRITE IDD4W(VDD) x9/x18 985 785 779 609 mA IDD4W(VEXT) 30 30 30 25 mA BL=8; Cyclic bank access; Half of address bits change every 4 clock cycles; continuous data; Measurement is taken during continuous WRITE IDD8W(VDD) x9/x18 770 675 668 525 mA IDD8W(VEXT) 30 30 30 25 mA BL=2; Cyclic bank access; Half of address bits change every clock cycle; Measurement is taken during continuous READ IDD2R(VDD) x9/x18 1225 865 860 735 mA IDD2R(VEXT) 50 50 50 40 mA BL=4; Cyclic bank access; Half of address bits change every clock cycle; Measurement is taken during continuous READ IDD4R(VDD) x9/x18 860 685 680 525 mA IDD4R(VEXT) 30 30 30 25 mA BL=8; Cyclic bank access; Half of address bits change every clock cycle; Measurement is taken during continuous READ IDD8R(VDD) x9/x18 655 575 570 450 mA IDD8R(VEXT) 30 30 30 25 mA Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00E, 06/20/2012
6
IS49NLS96400,IS49NLS18320
Notes:
1) IDD specifications are tested after the device is properly initialized. +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, +2.38V ≤ VEXT ≤ +2.63V, +1.4V ≤ VDDQ ≤ VDD, VREF = VDDQ/2. 2) tCK = tDK = MIN, tRC = MIN. 3) Definitions for IDD conditions: a.
LOW is defined as VIN ≤ VIL(AC) MAX. b. HIGH is defined as VIN ≥ VIH(AC) MIN. c.
Stable is defined as inputs remaining at a HIGH or LOW level. d. Floating is defined as inputs at VREF = VDDQ/2. e.
Continuous data is defined as half the D or Q signals changing between HIGH and LOW every half clock cycle (twice per clock). f.
Continuous address is defined as half the address signals changing between HIGH and LOW every clock cycle (once per clock). g.
Sequential bank access is defined as the bank address incrementing by one every tRC. h. Cyclic bank access is defined as the bank address incrementing by one for each command access. For BL = 2 this is every clock, for BL = 4 this is every other clock, and for BL = 8 this is every fourth clock. 4) CS# is HIGH unless a READ, WRITE, AREF, or MRS command is registered. CS# never transitions more than once per clock cycle. 5) IDD parameters are specified with ODT disabled. 6) Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operations are tested for the full voltage range specified. 7) IDD tests may use a VIL‐to‐VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#). Parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2 V/ns in the range between VIL(AC) and VIH(AC). 2.5 Recommended AC Operating Conditions (+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted.) Parameter Symbol Min Max Units Input HIGH voltage VIH(AC) VREF + 0.2 ‐ V Input LOW voltage VIL(AC) ‐ VREF – 0.2 V Notes: 1. Overshoot: VIH (AC) ≤ VDDQ + 0.7V for t ≤ tCK/2 2. Undershoot: VIL (AC) ≥ – 0.5V for t ≤ tCK/2 3. Control input signals may not have pulse widths less than tCKH(MIN) or operate at cycle rates less than tCK(MIN.). 2.6 Temperature and Thermal Impedance. Temperature Limits Parameter Symbol Min Max Units TJ 0 110 °C Operating junction temperature TJ 0 100 °C Operating case temperature 3 TC 0 95 °C 1
Reliability junction temperature 2
Notes: 1. Temperatures greater than 110°C may cause permanent damage to the device. This is a stress rating only and functional operation of the device at or above this is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability of the part. 2. Junction temperature depends upon cycle time, loading, ambient temperature, and airflow. 3. MAX operating case temperature; TC is measured in the center of the package. Device functionality is not guaranteed if the device exceeds maximum TC during operation. Thermal Resistance Package Substrate 144‐ball FBGA 4‐layer Theta‐ja (Airflow = 0m/s) 20.6 Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00E, 06/20/2012
Theta‐ja (Airflow = 1m/s) 19.1 Theta‐ja (Airflow = 2m/s) 17.2 Theta‐jc 2.4 Unit C/W 7
IS49NLS96400,IS49NLS18320
2.7 AC Electrical Characteristics (1, 2, 3, 4) Description Symbol ‐18 (1.875ns @tRC=15ns) ‐25E (2.5ns @tRC=15ns) ‐25 (2.5ns @tRC=20ns) ‐33 (3.3ns @tRC=20ns) Units Min Max Min Max Min Max Min Max tCK 1.875 2.7 2.5 5.7 2.5 5.7 3.3 5.7 ns tDK tCK – tCK – tCK – tCK – ns tJITPER –100 100 –150 150 –150 150 –200 200 ps tJITCC – 200 – 300 – 300 – 400 ps tCKH/tDKH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK tCKL/tDKL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK tCKDK –0.3 0.3 –0.45 0.5 –0.45 0.5 –0.45 1.2 ns tMRSC 6 – 6 – 6 – 6 – tCK tAS/tCS 0.3 – 0.4 – 0.4 – 0.5 – ns tDS 0.17 – 0.25 – 0.25 – 0.3 – ns tAH/tCH 0.3 – 0.4 – 0.4 – 0.5 – ns tDH 0.17 – 0.25 – 0.25 – 0.3 – ns tQKH 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCKH tQKL 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCKL tQHP MIN(tQKH, tQKL) – MIN(tQKH, tQKL) – MIN(tQKH, tQKL) – MIN(tQKH, tQKL) – tCKQK –0.2 0.2 –0.25 0.25 –0.25 0.25 –0.3 0.3 ns tQKQ0, tQKQ1 –0.12 0.12 –0.2 0.2 –0.2 0.2 –0.25 0.25 ns tQKQ –0.22 0.22 –0.3 0.3 –0.3 0.3 –0.35 0.35 ns tQKVLD –0.22 0.22 –0.3 0.3 –0.3 0.3 –0.35 0.35 ns Data valid window tDVW tQHP ‐ (tQKQx [MAX] + |tQKQx [MIN]|) – tQHP ‐ (tQKQx [MAX] + |tQKQx [MIN]|)
– tQHP ‐ (tQKQx [MAX] + |tQKQx [MIN]|)
– tQHP ‐ (tQKQx [MAX] + |tQKQx [MIN]|)
– Average periodic refresh interval (9) tREFI – 0.24 – 0.24 – 0.24 – 0.24 μs Input clock cycle time Input data clock cycle time Clock jitter: period(5, 6) Clock jitter: cycle‐to‐
cycle Clock HIGH time Clock LOW time Clock to input data clock Mode register set cycle time to any command Address/command and input setup time Data‐in and data mask to DK setup time Address/command and input hold time Data‐in and data mask to DK hold time Output data clock HIGH time Output data clock LOW time Half‐clock period QK edge to clock edge skew QK edge to output data edge (7) QK edge to any output data edge (8) QK edge to QVLD Integrated Silicon Solution, Inc. – www.issi.com –
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Notes: 1. All timing parameters are measured relative to the crossing point of CK/CK#, DK/DK# and to the crossing point with VREF of the command, address, and data signals. 2. Outputs measured with equivalent load: VTT
50 Ω
Q
Test Point
10 pF
3.
4.
5.
6.
7.
8.
9.
Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operations are tested for the full voltage range specified. AC timing may use a VIL‐to‐VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2 V/ns in the range between VIL(AC) and VIH(AC). Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. Frequency drift is not allowed. For a x18 device, Q0–Q8 is referenced to tQKQ0 and Q9–Q17 is referenced to tQKQ1. For a x9 device, Q0–Q8 is referenced to tQKQ0. tQKQ takes into account the skew between any QKx and any Q. To improve efficiency, eight AREF commands (one for each bank) can be posted to the memory on consecutive cycles at periodic intervals of 1.95μs. 2.8 Clock Input Conditions Differential Input Clock Operating Conditions Parameter Clock Input Voltage Level Clock Input Differential Voltage Level Clock Input Differential Voltage Level Clock Input Crossing Point Voltage Level Symbol VIN(DC) VID(DC) VID(AC) VIX(AC) Min
‐0.3
0.2
0.4
VDDQ/2‐0.15
Max VDDQ+0.3 VDDQ+0.6 VDDQ+0.6 VDDQ/2+0.15 Units V V V V Notes 8
8
9
Clock Input Example Notes: 1. DKx and DKx# have the same requirements as CK and CK#. 2. All voltages referenced to VSS. 3. Tests for AC timing, IDD and electrical AC and DC characteristics may be conducted at normal reference/supply voltage levels; but the related specifications and device operations are tested for the full voltage range specified. 4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or the crossing point for CK/CK#), and parameters specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2V/ns in the range between VIL(AC) and VIH(AC). Integrated Silicon Solution, Inc. – www.issi.com –
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5.
7.
8.
The AC and DC input level specifications are as defined in the HSTL Standard (i.e. the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above[below] the DC input LOW[HIGH] level). The CK/CK# input reference level (for timing referenced to CK/CK#) is the point at which CK and CK# cross. The input reference level for signal other than CK/CK# is VREF. CK and CK# input slew rate must be ≥ 2V/ns (≥ 4V/ns if measured differentially). VID is the magnitude of the difference between the input level on CK and input level on CK#. 9.
10.
11.
12.
The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track variations in the DC level of the same. CK and CK# must cross within the region. CK and CK# must meet at least VID(DC) (MIN.) when static and centered around VDDQ/2. Minimum peak‐to‐peak swing. 6.
Integrated Silicon Solution, Inc. – www.issi.com –
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3 Functional Descriptions
3.1 Power‐up and Initialization (1) The RLDRAM 2 Memory must be powered‐up and initialized using the specific steps listed below: 1. Apply power by ramping up supply voltages VEXT, VDD, VDDQ, VREF, and VTT. Apply VDD and VEXT before or at the same time as VDDQ (2). Power‐up sequence begins when both VDD and VEXT approach their nominal levels. Afterwards, apply VDDQ before or at the same time as VREF and VTT. Once the supply voltages are stable, clock inputs CK/CK# and DK/DK# can be applied. Register NOP commands to the control pins to avoid issuing unwanted commands to the device. 2. Keep applying stable conditions for a minimum of 200 µs. 3. Register at least three consecutive MRS commands consisting of two or more dummy MRS commands and one valid MRS command. Timing parameter tMRSC is not required to be met during these consecutive MRS commands but asserting a LOW logic to the address signals is recommended. 4. tMRSC timing delay after the valid MRS command, Auto Refresh commands to all 8 banks and 1,024 NOP commands must be issued prior to normal operation. The Auto Refresh commands to the 8 banks can be issued in any order with respect to the 1,024 NOP commands. Please note that the tRC timing parameter must be met between an Auto Refresh command and a valid command in the same bank. 5. The device is now ready for normal operation. Notes: 1. Operational procedure other than the one listed above may result in undefined operations and may permanently damage the device. 2. VDDQ can be applied before VDD but will result in all D and Q data pins, DM, and other pins with an output driver to go logic HIGH (instead of tri‐state) and will remain HIGH until the VDD is the same level as VDDQ. This method is not recommended to avoid bus conflicts during the power‐up. 3.2 Power‐up and Initialization Flowchart Notes: 1. The supply voltages can be ramped up simultaneously. 2. The dummy and valid MRS commands must be issued in consecutive clock cycles. At least two dummy MRS commands are required. It is recommended to assert a LOW logic on the address signals during the dummy MRS commands. 3. The Auto Refresh commands can be issued in any order with respect to the 1,024 NOP commands. However, timing parameter tRC must be met before issuing any valid command in a bank after an AREF command to the same bank has been issued. Integrated Silicon Solution, Inc. – www.issi.com –
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3.3 Power‐up and Initialization Timing Diagram NON‐Multiplexed Address Mode Notes: 1. It is recommended that the address input signals be driven LOW during the dummy MRS commands. 2. A10–A17 must be LOW. 3. DLL must be reset if tCK or VDD are changed. 4. CK and CK# must be separated at all times to prevent invalid commands from being issued. 5. The Auto Refresh commands can be issued in any order with respect to the 1,024 NOP commands. However, timing parameter tRC must be met before issuing any valid command in a bank after an AREF command to the same bank has been issued. Multiplexed Address Mode Notes: 1. It is recommended that the address input signals be driven LOW during the dummy MRS commands. 2. A10–A18 must be LOW. Integrated Silicon Solution, Inc. – www.issi.com –
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3.
4.
5.
6.
Set address A5 HIGH. This enables the part to enter multiplexed address mode when in non‐multiplexed mode operation. Multiplexed address mode can also be entered at some later time by issuing an MRS command with A5 HIGH. Once address bit A5 is set HIGH, tMRSC must be satisfied before the two cycle multiplexed mode MRS command is issued. Address A5 must be set HIGH. This and the following step set the desired mode register once the memory is in multiplexed address mode. CK and CK# must be separated at all times to prevent invalid commands from being issued. The Auto Refresh commands can be issued in any order with respect to the 1,024 NOP commands. However, timing parameter tRC must be met before issuing any valid command (Any) in a bank after an AREF command to the same bank has been issued. 3.4 Mode Register Setting and Features Note: The MRS command can only be issued when all banks are idle and no bursts are in progress. Integrated Silicon Solution, Inc. – www.issi.com –
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The Mode Register Set command stores the data for controlling the various operating modes of the memory using address inputs A0‐A17 as mode registers. During the MRS command, the cycle time and the read/write latency of the memory can be selected from different configurations. The MRS command also programs the memory to operate in either Multiplexed Address Mode or Non‐
multiplexed Address Mode. In addition, several features can be enabled using the MRS command. These are the DLL, Drive Impedance Matching, and On‐Die Termination (ODT). tMRSC must be met before any command can be issued. tMRSC is measured like the picture above in both Multiplexed and Non‐multiplexed mode. Mode Register Diagram (Non‐multiplexed Address Mode) Address On‐Die Termination
A9
Mode Register
Field
Off (Default)
0
On
1
A10‐17 M10‐17
0 1
A9
M9
ODT
A8
M8
IM
A7
M7
DLL
A6
M6
NA2
A5
M5
AM
A4
M4
A3
M3
A2
M2
A1
M1
A0
M0
BL
A2
0
0
0
0
1
1
1
1
A1
0
0
1
1
0
0
1
1
Drive Impedance
Internal 50Ω 5 (Default)
External(ZQ)
A7
0
1
DLL Reset
DLL reset4 (Default)
DLL enable
A5
0
1
Address MUX
Non‐multiplexed (Default)
Multiplexed
A4
0
0
1
1
Config
A0
0
1
0
1
0
1
0
1
A8
0
1
A3
0
1
0
1
Burst Length(BL)
2
4
8
Reserved
Read/Write Latency and Cycle Time Configuration6,7
Configuration
tRC(tCK)
tRL(tCK)
tWL(tCK)
4
4
5
1 3 (Default)
3
4
4
5
1 2
6
6
7
3
8
8
9
3,8
3
3
4
4 5
5
5
6
Reserved
n/a
n/a
n/a
Reserved
n/a
n/a
n/a
Valid Frequency Range (MHz)
266‐175
266‐175
400‐175
533‐175
200‐175
333‐175
n/a
n/a
Notes: 1. A10‐A17 must be set to zero; A18‐An are "Don't cares." 2. A6 not used in MRS. 3. BL = 8 is not available. 4. DLL RESET turns the DLL off. 5. ±30 % temperature variation. 6. tRC < 20ns in any configuration is only available with ‐25E and ‐18 speed grades. 7. Minimum operating frequency for ‐18 is 370MHz. 8. The minimum tRC is typically 3 cycles, except in the case of a WRITE followed by a READ to the same bank. In this instance the minimum tRC is 4 cycles. Integrated Silicon Solution, Inc. – www.issi.com –
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Mode Register Diagram (Multiplexed Address Mode) Ax
Ay
Mode Register
A10‐18 A10‐18 M10‐18
0 1
A9
M9
ODT
A8
M8
IM
A9
M7
DLL
A8
M6
NA5
A5
M5
AM
A4
M4
A3
M3
BL
A4
M2
A3
M1
A9
0
1
On‐Die Termination
Off (Default)
On
A8
0
1
Drive Impedance
Internal 50Ω 6 (Default)
External(ZQ)
A7
0
1
DLL Reset
DLL reset4 (Default)
DLL enable
A5
0
1
Address MUX
Non‐multiplexed (Default)
Multiplexed
A4
0
0
1
1
Config
A3
0
1
0
1
Burst Length(BL)
2 (Default)
4
8
Reserved
M0
A0
Ay4
0
0
0
0
1
1
1
1
Ay3
0
0
1
1
0
0
1
1
Ax0
0
1
0
1
0
1
0
1
Read/Write Latency and Cycle Time Configuration8,9
Configuration
tRC(tCK)
tRL(tCK)
tWL(tCK)
2
4
5
6
1 (Default)
2
4
5
6
1 2
6
7
8
3
8
9
10
3
4
5
4 2,10
5
5
6
7
Reserved
n/a
n/a
n/a
Reserved
n/a
n/a
n/a
Valid Frequency Range (MHz)
266‐175
266‐175
400‐175
533‐175
200‐175
333‐175
n/a
n/a
Notes: 1. A10‐A18 must be set to zero; A18‐An are "Don't cares." 2. BL = 8 is not available. 3. ±30 % temperature variation. 4. DLL RESET turns the DLL off. 5. Ay = 8 is not used in MRS. 6. BA0‐BA2 are "Don't care." 7. Addresses A0, A3, A4, A5, A8, and A9 must be set as shown in order to activate the mode register in the multiplexed address mode. 8. tRC < 20ns in any configuration is only available with ‐25E and ‐18 speed grades. 9. Minimum operating frequency for ‐18 is 370MHz. 10. The minimum tRC is typically 3 cycles, except in the case of a WRITE followed by a READ to the same bank. In this instance the minimum tRC is 4 cycles. Integrated Silicon Solution, Inc. – www.issi.com –
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3.5 Mode Register Bit Description Configuration The cycle time and read/write latency can be configured from the different options shown in the Mode Register Diagram. In order to maximize data bus utilization, the WRITE latency is equal to READ latency plus one. The read and write latencies are increased by one clock cycle during multiplexed address mode compared to non‐multiplexed mode. Burst Length The burst length of the read and write accesses to memory can be selected from three different options: 2, 4, and 8. Changes in the burst length affect the width of the address bus and is shown in the Burst Length and Address Width Table. The data written during a prior burst length setting is not guaranteed to be accurate when the burst length of the device is changed. Burst Length and Address Width Table Burst Length 576Mb Address Bus x9 x18 2 4 A0‐A21 A0‐A20 A0‐A20 A0‐A19 8 A0‐A19 A0‐A18 DLL Reset The default setting for this option is LOW, whereby the DLL is disabled. Once the mode register for this feature is set HIGH, 1024 cycles (5μs at 200 MHz) are needed before a READ command can be issued. This time allows the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a violation of the tCKQK parameter. A reset of the DLL is necessary if tCK or VDD is changed after the DLL has already been enabled. To reset the DLL, an MRS command must be issued where the DLL Reset Mode Register is set LOW. After waiting tMRSC, a subsequent MRS command should be issued whereby the DLL Reset Mode Register is set HIGH. 1024 clock cycles are then needed before a READ command is issued. Drive Impedance Matching The RLDRAM 2 Memory is equipped with programmable impedance output buffers. The purpose of the programmable impedance output buffers is to allow the user to match the driver impedance to the system. To adjust the impedance, an external precision resistor (RQ) is connected between the ZQ ball and VSS. The value of the resistor must be five times the desired impedance. For example, a 300Ω resistor is required for an output impedance of 60Ω. The range of RQ is 125–300Ω, which guarantees output impedance in the range of 25–60Ω (within 15 percent). Output impedance updates may be required because over time variations may occur in supply voltage and temperature. When the external drive impedance is enabled in the MRS, the device will periodically sample the value of RQ. An impedance update is transparent to the system and does not affect device operation. All data sheet timing and current specifications are met during an update. When the Drive Impedance Mode Register is set LOW during the MRS command, the memory provides an internal impedance at the output buffer of 50Ω (±30% with temperature variation). This impedance is also periodically sampled and adjusted to compensate for variation in supply voltage and temperature. Address Multiplexing Although the RLDRAM 2 Memory is capable of accepting all the addresses in a single rising clock edge, this memory can be programmed to operate in multiplexed address mode, which is very similar to a traditional DRAM. In multiplexed address mode, the address can be sent to the memory in two parts within two consecutive rising clock edges. This minimizes the number of address signal connections between the controller and the memory by reducing the address bus to a maximum of only 11 lines. Since the memory requires two clock cycles to read and write the data, data bus efficiency is affected when operating in continuous burst mode with a burst length of 2 setting. Bank addresses are provided to the memory at the same time as the WRITE and READ commands together with the first address part, Ax. The second address part, Ay, is then issued to the memory on the next rising clock edge. AREF commands only require the bank address. Since AREF commands do not need a second consecutive clock for address latching, they may be issued on consecutive clocks. Integrated Silicon Solution, Inc. – www.issi.com –
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Address Mapping in Multiplexed Address Mode Data Width Burst Length 2 X9 4 8 2 X18 4 8 Address Ball A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ax Ay Ax Ay Ax Ay A0 A20 A0 A20 A0 X A3 A1 A3 A1 A3 A1 A4 A2 A4 A2 A4 A2 A5 A21 A5 X A5 X A8 A6 A8 A6 A8 A6 A9 A7 A9 A7 A9 A7 A10 A19 A10 A19 A10 A19 A13 A11 A13 A11 A13 A11 A14 A12 A14 A12 A14 A12 A17 A16 A17 A16 A17 A16 A18 A15 A18 A15 A18 A15 Ax Ay Ax Ay Ax A0 A20 A0 X A0 A3 A1 A3 A1 A3 A4 A2 A4 A2 A4 A5 X A5 X A5 A8 A6 A8 A6 A8 A9 A7 A9 A7 A9 A10 A19 A10 A19 A10 A13 A11 A13 A11 A13 A14 A12 A14 A12 A14 A17 A16 A17 A16 A17 A18 A15 A18 A15 A18 Ay X A1 A2 X A6 A7 X A11 A12 A16 A15 Note: X = Don’t Care. On‐Die Termination (ODT) If the ODT is enabled, the Ds, Qs and DM are terminated to VTT with a resistance RTT. The command, address, QVLD, and clock signals are not terminated. Figure 3.1 shows the equivalent circuit of a D receiver with ODT. The ODT function is dynamically switched off when a Q begins to drive after a READ command is issued. Similarly, ODT is designed to switch on at the Qs after the memory has issued the last piece of data. The D and DM pins will always be terminated. ODT DC Parameters Table Description Symbol Min Max Units Notes Termination Voltage VTT 0.95 x VREF 1.05 x VREF V 1, 2 On‐die termination RTT 125 185 Ω 3 Notes: 1. All voltages referenced to VSS (GND). 2. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF. 3. The RTT value is measured at 95°C TC. Figure 3.1 ODT Equivalent Circuit Integrated Silicon Solution, Inc. – www.issi.com –
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3.6 Deselect/No Operation (DESL/NOP) The Deselect command is used to prevent unwanted operations from being performed in the memory device during wait or idle states. Operations already registered to the memory prior to the assertion of the Deselect command will not be cancelled. 3.7 Read Operation (READ) The Read command performs burst‐oriented data read accesses in a bank of the memory device. The Read command is initiated by registering the WE# and REF# signals logic HIGH while the CS# is in logic LOW state. In non‐multiplexed address mode, both an address and a bank address must be provided to the memory during the assertion of the Read command. In multiplexed mode, the bank address and the first part of the address, Ax, must be supplied together with the Read command. The second part of the address, Ay, must be latched to the memory on the subsequent rising edge of the CK clock. Data being accessed will be available in the data bus a certain amount of clock cycles later depending on the Read Latency Configuration setting. Data driven in the Q signals are edge‐aligned to the free‐running output data clocks QKx and QKx#. A half clock cycle before the read data is available on the data bus, the data valid signal, QVLD, will transition from logic LOW to HIGH. The QVLD signal is also edge‐
aligned to the data clock QKx and QKx#. If no other commands have been registered to the device when the burst read operation is finished, the Q signals will go to High‐Z state. The QVLD signal transition from logic HIGH to logic LOW on the last bit of the READ burst. Please note that if CK/CK# violates the VID (DC) specification while a READ burst is occurring, QVLD will remain HIGH until a dummy READ command is registered. The QK clocks are free‐running and will continue to cycle after the read burst is complete. Back‐to‐back READ commands are permitted which allows for a continuous flow of output data. CK#
Non‐Multiplexed Mode
CK#
CK
CK
CS#
CS#
WE#
WE#
REF#
REF#
Multiplexed Mode
ADDRESS
A
ADDRESS
Ax
BANK
ADDRESS
BA*
BANK
ADDRESS
BA*
Ay
Don’t care
Read Command Integrated Silicon Solution, Inc. – www.issi.com –
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0
tCKH
1
2
3
4
5
6
RD
RD
NOP
NOP
NOP
NOP
NOP
BA2, A2
BA3, A3
tCKL
tCK
CK#
CK
Command
Address
Read Latency = 4
tQKVLD
QVLD
tQKVLD
tQKQ
Q
Q2‐1
tCKQK
tQKH
tQKQ
Q2‐2
Q3‐1
Q3‐2
tQKL
QKx#
QKx
Don’t Care
Undefined
Basic Read Burst with QVLD: BL=2 & RL=4 Notes: 1. Minimum READ data valid window can be expressed as MIN(tQKH, tQKL) – 2 x MAX(tQKQx). 2. tCKH and tCKL are recommended to have 50% / 50% duty. 3. tQKQ0 is referenced to Q0–Q8 and tQKQ1 is referenced to Q9–Q17 in x18. 4. tQKQ takes into account the skew between any QKx and any Q. 5. tCKQK is specified as CK rising edge to QK rising edge. Integrated Silicon Solution, Inc. – www.issi.com –
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0
1
2
3
4
5
6
7
8
RD
WR
RD
NOP
NOP
NOP
NOP
NOP
NOP
BA2, A2
BA3, A3
CK#
CK
Command
Address BA1, A1
Write Latency = 5
Read Latency = 4
DK#
DK
D
D2‐1
Q
Q1‐1
Q1‐2
Q1‐3
Q1‐4
D2‐2
Q3‐1
D2‐3
Q3‐2
D2‐4
Q3‐3
Q3‐4
QVLD
QK#
QK
Don’t care
Undefined
Read Followed by Write: BL = 4, RL =4 & WL = 5, Configuration 1 3.8 Write Operation (WRITE) The Write command performs burst‐oriented data write accesses in a bank of the memory device. The Write command is initiated by registering the REF# signal logic HIGH while the CS# and WE# signals are in logic LOW state. In non‐multiplexed address mode, both an address and a bank address must be provided to the memory during the assertion of the Write command. In multiplexed mode, the bank address and the first part of the address, Ax, must be supplied together with the Write command. The second part of the address, Ay, must be latched to the memory on the subsequent rising edge of the CK clock. Input data to be written to the device can be registered several clock cycles later depending on the Write Latency Configuration setting. The write latency is always one cycle longer than the programmed read latency. The DM signal can mask the input data by setting this signal logic HIGH. At least one NOP command in between a Read and Write commands is required in order to avoid data bus contention. The setup and hold times for DM and data signals are tDS and tDH, which are referenced to the DK clocks. Integrated Silicon Solution, Inc. – www.issi.com –
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CK#
Non‐Multiplexed Mode
CK#
CK
CK
CS#
CS#
WE#
WE#
REF#
REF#
Multiplexed Mode
ADDRESS
A
ADDRESS
Ax
BANK
ADDRESS
BA*
BANK
ADDRESS
BA*
Ay
Don’t care
Write Command Basic WRITE Burst with DM Timing: BL=4 & WL=5 Integrated Silicon Solution, Inc. – www.issi.com –
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0
1
2
3
4
5
6
7
8
9
WR
WR
RD
RD
NOP
NOP
NOP
NOP
NOP
NOP
BA1,A1
BA2,A2
BA3, A3
BA4, A4
CK#
CK
Command
Address
Read Latency = 4
Read Latency = 4
Write Latency = 5
Write Latency = 5
DKx
DKx#
D
D1‐1
D1‐2
Q
D2‐1
D2‐2
Q3‐1
Q3‐2
Q4‐1
Q4‐2
QVLD
QKx
QKx#
Don’t Care
Undefined
Write Followed by Read: BL=2, RL=4 & WL=5, Configuration 1 3.9 Auto Refresh Command (AREF) The Auto Refresh command performs a refresh cycle on one row of a specific bank of the memory. Only bank addresses are required together with the control the pins. Therefore, Auto Refresh commands can be issued on subsequent CK clock cycles on both multiplexed and non‐multiplexed address mode. Any command following an Auto Refresh command must meet a tRC timing delay or later. Auto Refresh Command Integrated Silicon Solution, Inc. – www.issi.com –
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0
tCKH
tCKL
2
1
3
4
5
6
NOP
NOP
ANYCOMx
ANYCOMy
BAx
BAy
tCK
CK#
CK
QKx#
QKx
Command
tRC
AREFx
AREFy
NOP
tRC
Bank Address
BAx
BAy
Don’t Care
AREF example in tRC(tCK)=5 option: Configuration=5 Command Truth Table Operation Code CS# WE# REF# Ax BAx Device DESELECT/No Operation Mode Register Set Read Write Auto Refresh DESL/NOP MRS READ WRITE AREF H L L L L X L H L H X L H H L X OPCODE A A X X X BA BA BA Notes: 1. X = "Don't Care;" H = logic HIGH; L = logic LOW; A = Valid Address; BA = Valid Bank Address. 2. During MRS, only address inputs A0‐A17 are used. 3. Address width changes with burst length. 4. All input states or sequences not shown are illegal or reserved. 5. All command and address inputs must meet setup and hold times around the rising edge of CK. Integrated Silicon Solution, Inc. – www.issi.com –
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3.11 On‐Die Termination (ODT) Timing examples. Read Operation with ODT: RL=4, BL=4
Read to Write with ODT: RL=4, BL=2 0
1
2
3
RD
WR
NOP
NOP
BA2, A2
BA1, A1
4
5
6
NOP
NOP
NOP
7
CK#
CK
Command
Address
NOP
Read Latency = 4
DKx#
DKx
Write Latency = 5
D
D1‐0
tQKVLD
D1‐1
tQKVLD
QVLD
Q ODT
Q ODT on
Q
Q ODT Off
Q2‐0
Q ODT on
Q2‐1
QKx#
QKx
Don’t Care
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00E, 06/20/2012
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IS49NLS96400,IS49NLS18320
4 IEEE 1149.1 TAP and Boundary Scan RLDRAM 2 Memory devices have a serial boundary‐scan test access port (TAP) that allow the use of a limited set of JTAG instructions to test the interconnection between the memory I/Os and printed circuit board traces or other components. In conformance with IEEE Standard 1149.1, the memory contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. The TAP operates in accordance with IEEE Standard 1149.1‐2001 (JTAG) with the exception of the ZQ pin. To guarantee proper boundary‐scan testing of the ZQ pin, MRS bit M8 needs to be set to 0 until the JTAG testing of the pin is complete. Note that on power up, the default state of MRS bit M8 is logic LOW. If the memory boundary scan register is to be used upon power up and prior to the initialization of the memory device, the CK and CK# pins meet VID(DC) or CS# be held HIGH from power up until testing. Not doing so could result in inadvertent MRS commands to be loaded, and subsequently cause unexpected results from address pins that are dependent upon the state of the mode register. If these measures cannot be taken, the part must be initialized prior to boundary scan testing. If a full initialization is not practical or feasible prior to boundary scan testing, a single MRS command with desired settings may be issued instead. After the single MRS command is issued, the tMRSC parameter must be satisfied prior to boundary scan testing. 4.1 Disabling the JTAG feature The RLDRAM 2 Memory can operate without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be left disconnected. They may alternately be connected to VDD through a pull‐up resistor. TDO should be left disconnected. On power‐up, the device will come up in a reset state, which will not interfere with device operation. 4.2 Test Access Port Signal List: Test Clock (TCK) This signal uses VDD as a power supply. The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) This signal uses VDD as a power supply. The TMS input is used to send commands to the TAP controller and is sampled on the rising edge of TCK. Test Data‐In (TDI) This signal uses VDD as a power supply. The TDI input is used to serially input test instructions and information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. TDI is connected to the most significant bit (MSB) of any register. For more information regarding instruction register loading, please see the TAP Controller State Diagram. Test Data‐Out (TDO) This signal uses VDDQ as a power supply. The TDO output ball is used to serially clock test instructions and data out from the registers. The TDO output driver is only active during the Shift‐IR and Shift‐DR TAP controller states. In all other states, the TDO pin is in a High‐
Z state. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. For more information, please see the TAP Controller State Diagram. Integrated Silicon Solution, Inc. – www.issi.com –
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4.3 TAP Controller State and Block Diagram Note1
TDI
Bypass Register (1 bit)
Identification Register (32 bits)
TDO
Instruction Register (8 bits)
Control Signals
TMS
TAP Controller
TCK
Note: 113 boundary scan registers in RLDRAM 2 Memory Integrated Silicon Solution, Inc. – www.issi.com –
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4.4 Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. RESET may be performed while the SRAM is operating and does not affect its operation. At power‐up, the TAP is internally reset to ensure that TDO comes up in a high‐Z state. 4.5 TAP Registers Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK and output on the TDO pin on the falling edge of TCK. Instruction Register This register is loaded during the update‐IR state of the TAP controller. At power‐up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the capture‐IR state, the two LSBs are loaded with a binary “01” pattern to allow for fault isolation of the board‐level serial test data path. Bypass Register The bypass register is a single‐bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the memory device with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the device. Several balls are also included in the scan register to reserved balls. The boundary scan register is loaded with the contents of the memory Input and Output ring when the TAP controller is in the capture‐DR state and is then placed between the TDI and TDO balls when the controller is moved to the shift‐DR state. Each bit corresponds to one of the balls on the device package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor‐specific, 32‐bit code during the capture‐DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the device and can be shifted out when the TAP controller is in the shift‐DR state. 4.6 Scan Register Sizes Register Name Bit Size Instruction Register 8
Bypass Register 1
Boundary Scan Register 113
Identification (ID) Register 32
Integrated Silicon Solution, Inc. – www.issi.com –
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4.7 TAP Instruction Set Many instructions are possible with an eight‐bit instruction register and all valid combinations are listed in the TAP Instruction Code Table. All other instruction codes that are not listed on this table are reserved and should not be used. Instructions are loaded into the TAP controller during the Shift‐IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted from the instruction register through the TDI and TDO pins. To execute an instruction once it is shifted in, the TAP controller must be moved into the Update‐IR state. EXTEST The EXTEST instruction allows circuitry external to the component package to be tested. Boundary‐scan register cells at output balls are used to apply a test vector, while those at input balls capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the update‐IR state of EXTEST, the output driver is turned on, and the PRELOAD data is driven onto the output balls. IDCODE The IDCODE instruction causes a vendor‐specific, 32‐bit code to be loaded into the identification register. It also places the identification register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the shift‐DR state. The IDCODE instruction is loaded into the instruction register upon power‐up or whenever the TAP controller is given a test logic reset state. High‐Z The High‐Z instruction causes the bypass register to be connected between the TDI and TDO. This places all RLDRAM 2 Memory outputs into a High‐Z state. CLAMP When the CLAMP instruction is loaded into the instruction register, the data driven by the output balls are determined from the values held in the boundary scan register. SAMPLE/PRELOAD When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the capture‐DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 50 MHz, while the memory clock operates significantly faster. Because there is a large difference between the clock frequencies, it is possible that during the capture‐DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To ensure that the boundary scan register will capture the correct value of a signal, the memory signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS plus tCH). The memory clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/ PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK# captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the shift‐DR state. This places the boundary scan register between the TDI and TDO balls. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a shift‐DR state, the bypass register is placed between TDI and TDO. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Integrated Silicon Solution, Inc. – www.issi.com –
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4.8 TAP DC Electrical Characteristics and Operating Conditions (+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted) Description Conditions Symbol Min Max Units Notes Input high (logic 1) voltage VIH VREF + 0.15 VDDQ + 0.3 V 1, 2 Input low (logic 0) voltage VIL VSSQ  0.3 VREF  0.15 V 1, 2 0V ≤ VIN ≤ VDD ILI 
5 µA Output Disabled, 0V ≤ VIN ≤ VDDQ ILO 
5 µA Output low voltage IOLC =100 µA VOL1 ‐ 0.2 V 1 Output low voltage IOLT = 2mA VOL2 ‐ 0.4 V 1 Output high voltage |IOHC| =100 µA VOH1 VDDQ ‐ 0.2 ‐ V 1 Output high voltage |IOHT | = 2mA VOH2 VDDQ ‐ 0.4 ‐ V 1 Input leakage current Output leakage current Notes: 1. All voltages referenced to VSS (GND). 2. Overshoot = VIH(AC) ≤ VDD + 0.7V for t ≤ tCK/2; undershoot = VIL(AC) ≥ –0.5V for t ≤ tCK/2; during normal operation, VDDQ must not exceed VDD. 4.9 TAP AC Electrical Characteristics and Operating Conditions (+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V) Description Symbol Min Max Units tTHTH fTF tTHTL tTLTH 20 ns 50 MHz 10 ns 10 ns tTLOX tTLOV tDVTH tTHDX 0 ns 10 ns 5 ns 5 ns tMVTH tCS 5 ns 5 ns tTMHX tCH 5 ns 5 ns Clock Clock Cycle Time Clock Frequency Clock HIGH Time Clock LOW Time TDI/TDO times TCK LOW to TDO unknown TCK LOW to TDO valid TDI valid to TCK High TCK HIGH to TDI invalid Setup times TMS Setup Capture Setup Hold Times TMS hold Capture hold Note: tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. Integrated Silicon Solution, Inc. – www.issi.com –
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4.10 TAP Timing 4.11 TAP Instruction Codes Instruction Code EXTEST 0000 0000 IDCODE 0010 0001 SAMPLE/PRELOAD 0000 0101 CLAMP 0000 0111 High‐Z 0000 0011 BYPASS 1111 1111 Description Captures Input and Output ring contents. Places the boundary scan register between TDI and TDO. This operation does not affect device operations Loads the ID register with the vendor ID code and places the register between TDI and TDO; This operation does not affect device operations Captures I/O ring contents; Places the boundary scan register between TDI and TDO Selects the bypass register to be connected between TDI and TDO; Data driven by output balls are determined from values held in the boundary scan register Selects the bypass register to be connected between TDI and TDO; All outputs are forced into High‐Z Places the bypass register between TDI and TDO; This operation does not affect device operations Note: All other remaining instruction codes not mentioned in the above table are reserved and should not be used. 4.12 Identification (ID) Register Definition Instruction Field All Devices Revision number (31:28) abcd Device ID (27:12) 00jkidef10100111 Vendor ID code (11:1) ID register presence indicator (0) 000 1101 0101
1
Description ab = die revision cd = 00 for x9, 01 for x18, 10 for x36
def = 000 for 288Mb, 001 for 576Mb
i = 0 for common I/O, 1 for separate I/O
jk = 01 for RLDRAM 2 Memory Allows unique identification of vendor
Indicates the presence of an ID register
4.13 TAP Input AC Logic Levels (+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted) Description Input high (logic 1) voltage Input low (logic 0) voltage Symbol
VIH
VIL
Min
VREF + 0.3
‐
Max ‐ VREF ‐ 0.3 Units
V
V
Note: All voltages referenced to VSS (GND).
Integrated Silicon Solution, Inc. – www.issi.com –
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4.14 Boundary Scan Order Bit#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
Signal name Bump
x9
x18
ID
DK
DK
K1
DK#
DK#
K2
CS#
CS#
L2
REF# REF#
L1
WE# WE#
M1
A17
A17
M3
A16
A16
M2
A18
A18
N1
A15
A15
P1
DNU
Q14
N3
DNU
Q14
N3
DNU
D14
N2
DNU
D14
N2
DNU
Q15
P3
DNU
Q15
P3
DNU
D15
P2
DNU
D15
P2
DNU
QK1
R2
DNU QK1#
R3
DNU
D16
T2
DNU
D16
T2
DNU
Q16
T3
DNU
Q16
T3
DNU
D17
U2
DNU
D17
U2
DNU
Q17
U3
DNU
Q17
U3
ZQ
ZQ
V2
Q8
Q13
U10
Q8
Q13
U10
D8
D13
U11
D8
D13
U11
Q7
Q12
T10
Q7
Q12
T10
D7
D12
T11
D7
D12
T11
Q6
Q11
R10
Q6
Q11
R10
Bit#
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
Signal name Bump
x9
x18
ID
D6
D11
R11
D6
D11
R11
D5
D10
P11
D5
D10
P11
Q5
Q10
P10
Q5
Q10
P10
D4
D9
N11
D4
D9
N11
Q4
Q9
N10
Q4
Q9
N10
DM
DM
P12
A19
A19
N12
A11
A11
M11
A12
A12
M10
A10
A10
M12
A13
A13
L12
A14
A14
L11
BA1
BA1
K11
CK#
CK#
K12
CK
CK
J12
BA0
BA0
J11
A4
A4
H11
A3
A3
H12
A0
A0
G12
A2
A2
G10
A1
A1
G11
A20
A20
E12
QVLD QVLD
F12
Q3
Q3
F10
Q3
Q3
F10
D3
D3
F11
D3
D3
F11
Q2
Q2
E10
Q2
Q2
E10
D2
D2
E11
D2
D2
E11
QK0
QK0
D11
QK0# QK0# D10
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00E, 06/20/2012
Bit#
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
Signal name Bump
x9
x18
ID
D1
D1
C11
D1
D1
C11
Q1
Q1
C10
Q1
Q1
C10
D0
D0
B11
D0
D0
B11
Q0
Q0
B10
Q0
Q0
B10
DNU
Q4
B3
DNU
Q4
B3
DNU
D4
B2
DNU
D4
B2
DNU
Q5
C3
DNU
Q5
C3
DNU
D5
C2
DNU
D5
C2
DNU
Q6
D3
DNU
Q6
D3
DNU
D6
D2
DNU
D6
D2
DNU
D7
E2
DNU
D7
E2
DNU
Q7
E3
DNU
Q7
E3
DNU
D8
F2
DNU
D8
F2
DNU
Q8
F3
DNU
Q8
F3
A21 (A21)
E1
A5
A5
F1
A6
A6
G2
A7
A7
G3
A8
A8
G1
BA2
BA2
H1
A9
A9
H2
NF
NF
J2
NF
NF
J1
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ORDERING INFORMATION
Commercial Range: TC = 0° to +95°C; TA = 0°C to +70°C Frequency Speed Order Part No. Organization Package 533 MHz 1.875ns (tRC=15ns) IS49NLS96400‐18B IS49NLS96400‐18BL IS49NLS18320‐18B IS49NLS18320‐18BL 64M x 9 64M x 9 32M x 18 32M x 18 144 FBGA 144 FBGA, Lead‐free 144 FBGA 144 FBGA, Lead‐free 400 MHz 2.5ns (tRC=15ns) IS49NLS96400‐25EB IS49NLS96400‐25EBL IS49NLS18320‐25EB IS49NLS18320‐25EBL 64M x 9 64M x 9 32M x 18 32M x 18 144 FBGA 144 FBGA, Lead‐free 144 FBGA 144 FBGA, Lead‐free 400 MHz 2.5ns (tRC=20ns) IS49NLS96400‐25B IS49NLS96400‐25BL IS49NLS18320‐25B IS49NLS18320‐25BL 64M x 9 64M x 9 32M x 18 32M x 18 144 FBGA 144 FBGA, Lead‐free 144 FBGA 144 FBGA, Lead‐free 300 MHz 3.3ns (tRC=20ns) IS49NLS96400‐33B IS49NLS96400‐33BL IS49NLS18320‐33B IS49NLS18320‐33BL 64M x 9 64M x 9 32M x 18 32M x 18 144 FBGA 144 FBGA, Lead‐free 144 FBGA 144 FBGA, Lead‐free Integrated Silicon Solution, Inc. – www.issi.com –
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ORDERING INFORMATION
Industrial Range: TC =  40°C to 95°C; TA =  40°C to +85°C Frequency Speed Order Part No. Organization Package 533 MHz 1.875ns (tRC=15ns) IS49NLS96400‐18BI IS49NLS96400‐18BLI IS49NLS18320‐18BI IS49NLS18320‐18BLI 64M x 9 64M x 9 32M x 18 32M x 18 144 FBGA 144 FBGA, Lead‐free 144 FBGA 144 FBGA, Lead‐free 400 MHz 2.5ns (tRC=15ns) IS49NLS96400‐25EBI IS49NLS96400‐25EBLI IS49NLS18320‐25EBI IS49NLS18320‐25EBLI 64M x 9 64M x 9 32M x 18 32M x 18 144 FBGA 144 FBGA, Lead‐free 144 FBGA 144 FBGA, Lead‐free 400 MHz 2.5ns (tRC=20ns) IS49NLS96400‐25BI IS49NLS96400‐25BLI IS49NLS18320‐25BI IS49NLS18320‐25BLI 64M x 9 64M x 9 32M x 18 32M x 18 144 FBGA 144 FBGA, Lead‐free 144 FBGA 144 FBGA, Lead‐free 300 MHz 3.3ns (tRC=20ns) IS49NLS96400‐33BI IS49NLS96400‐33BLI IS49NLS18320‐33BI IS49NLS18320‐33BLI 64M x 9 64M x 9 32M x 18 32M x 18 144 FBGA 144 FBGA, Lead‐free 144 FBGA 144 FBGA, Lead‐free Integrated Silicon Solution, Inc. – www.issi.com –
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Ball Grid Array Package Code: B (144‐ball) Integrated Silicon Solution, Inc. – www.issi.com –
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