RN1972HFE,RN1973HFE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972HFE,RN1973HFE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN2972HFE, RN2973HFE Unit: mm Equivalent Circuit C B R1 E JEDEC ― JEITA ― TOSHIBA Absolute Maximum Ratings (Ta = 25°C) Weight:0.003g (typ.) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V IC 100 mA 100 mW Tj 150 °C Tstg −55~150 °C Collector current Collector power dissipation Junction temperature Storage temperature range Note: PC (Note 1) 2−2N1A Equivalent Circuit (top view) 6 5 Q2 Q1 1 4 2 3 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 1 2007-11-01 RN1972HFE,RN1973HFE Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 100 nA DC current gain hFE VCE = 5 V, IC = 1 mA 300 ⎯ ⎯ IC = 5 mA, IB = 0.25 mA ⎯ 0.06 0.15 V VCE = 10 V, IC = 5 mA ⎯ 250 ⎯ MHz VCB = 10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF 17.6 22 26.4 37.6 47 56.4 Collector-emitter saturation voltage Transition frequency fT Collector output capacitance Input resistor VCE (sat) RN1972HFE RN1973HFE Cob ⎯ R1 2 kΩ 2007-11-01 RN1972HFE,RN1973HFE Q1,Q2 Common RN1972HFE RN1972HFE IC - VI(ON) Ta=100°C 10 25 1 -25 EMITTER COMMON VCE=5V 0.1 1000 Ta=100°C 25 -25 100 EMITTER COMMON VCE=5V 10 0.1 1 10 INPUT VOLTAGE VI(ON) (V) RN1973HFE 100 0 0.2 0.4 0.6 0.8 1 1.2 INPUT VOLTAGE VI(OFF) (V) RN1973HFE IC - VI(ON) 100 1.4 IC - VI(OFF) 10000 10 COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (mA) IC - VI(OFF) 10000 COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (mA) 100 Ta=100°C 25 1 -25 EMITTER COMMON VCE=5V 0.1 1000 Ta=100°C 25 -25 100 EMITTER COMMON VCE=5V 10 0.1 1 10 100 INPUT VOLTAGE VI(ON) (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 INPUT VOLTAGE VI(OFF) (V) 3 2007-11-01 RN1972HFE,RN1973HFE Q1,Q2 Common RN1972HFE RN1972HFE hFE - IC Ta=100°C 1000 25 -25 100 EMITTER COMMON VCE=5V 10 0.1 1 10 100 100 Ta=100°C 10 -25 RN1973HFE 25 EMITTER COMMON IC/IB=20 1 0.1 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) RN1973HFE hFE - IC VCE(sat) - IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 10000 DC CURRENT GAIN hFE VCE(sat) - IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) DC CURRENT GAIN hFE 10000 Ta=100°C 1000 25 -25 100 EMITTER COMMON VCE=5V 10 0.1 1 10 100 100 Ta=100°C 10 -25 25 EMITTER COMMON IC/IB=20 1 0.1 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 4 2007-11-01 RN1972HFE,RN1973HFE Type Name Marking Type name RN1972HFE XX3 Type name RN1973HFE XX4 5 2007-11-01 RN1972HFE,RN1973HFE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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