RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit : mm z Reduce a quantity of parts and manufacturing process 0.32±0.05 0.8±0.05 0.4 z Simplify circuit design 1.2±0.05 1 0.4 1.2±0.05 z With built-in bias resistors 0.8±0.05 0.22±0.05 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 2 3 0.5±0.05 Equivalent Circuit 0.13±0.05 z Complementary to RN1131MFV, RN1132MFV VESM Characteristic Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA PC (Note1) 150 mW Tj 150 °C Tstg −55 to 150 °C Collector power dissipation Junction temperature Storage temperature range ― JEITA ― 2-1L1A Weight : 1.5 mg (typ.) Symbol Collector current JEDEC TOSHIBA Absolute Maximum Ratings (Ta = 25°C) 1.BASE 2.EMITTER 3.COLLECTOR Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1 : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) Land Pattern Example Unit : mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 1 2009-04-17 RN2131MFV,RN2132MFV Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― Emitter cut-off current IEBO DC current gain Characteristic Collector-emitter saturation voltage Collector output capacitance Input resistor RN2131MFV Test Condition Min Typ. Max Unit VCB = −50 V, IE = 0 ― ― −100 nA ― VEB = −5 V, IC = 0 ― ― −100 nA hFE ― VCE = −5 V, IC = −1 mA 120 ― 400 VCE (sat) ― IC = −5 mA, IB = −0.5 mA ― −0.1 −0.3 V Cob ― VCB = −10 V, IE = 0, f = 1 MHz ― 0.9 ― pF R1 ― ― 70 100 130 140 200 260 RN2132MFV 2 kΩ 2009-04-17 RN2131MFV,RN2132MFV IC - VI(ON) RN2131MFV RN2131MFV -10000 COMMON EMITTER VCE = -0.2V COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (mA) -100 -10 Ta = 100°C -25 25 -1 -0.1 -0.1 -1000 -25 25 Ta = 100°C -100 COMMON EMITTER VCE = -5V -10 -1 -10 -100 0-0 INPUT VOLTAGE VI(ON) ( V) RN2131MFV hFE - IC RN2131MFV -2 -3 -4 -5 VCE(sat) - IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) ( V) Ta = 100°C -25 25 100 COMMON EMITTER VCE = -5V 10 -0.1 -1 INPUT VOLTAGE VI(OFF) ( V) 1000 DC CURRENT GAIN hFE IC - VI(OFF) -1 -10 COMMON EMITTER IC/IB = 10 -0.1 Ta = 100°C -25 -0.01 -0.1 -100 COLLECTOR CURRENT IC (mA) -1 25 -10 -100 COLLECTOR CURRENT IC (mA) 3 2009-04-17 RN2131MFV,RN2132MFV RN2132MFV IC - VI(ON) RN2132MFV COMMON EMITTER VCE = -0.2V -10 Ta = 100°C -25 25 -1 -0.1 -0.1 -1000 -25 25 Ta = 100°C -100 COMMON EMITTER VCE = -5V -10 -1 -10 -100 0 -0 INPUT VOLTAGE VI(ON) ( V) RN2132MFV hFE - IC -4 -6 -8 -10 RN2132MFV VCE(sat) - IC -1 -25 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) ( V) Ta = 100°C 25 100 COMMON EMITTER VCE = -5V 10 -0.1 -2 INPUT VOLTAGE VI(OFF) ( V) 1000 DC CURRENT GAIN hFE IC - VI(OFF) -10000 COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (mA) -100 -1 -10 COMMON EMITTER IC/IB = 10 -0.1 Ta = 100°C -0.01 -0.1 -100 COLLECTOR CURRENT IC (mA) 25 -25 -1 -10 COLLECTOR CURRENT IC (mA) 4 2009-04-17 RN2131MFV,RN2132MFV Type Name Marking RN2131MFV Y3 RN2132MFV Y4 5 2009-04-17 RN2131MFV,RN2132MFV RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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