MT3S15TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S15TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR T3 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=13.5 dB (typ.) (@ f=1 GHz) 0.166±0.05 Low-Noise Figure: NF=1.6 dB (typ.) (@ f=1 GHz) • 2.0±0.1 • 0.65±0.05 1.7±0.1 Features UFM JEDEC ⎯ JEITA ⎯ TOSHIBA 2-2U1B Weight: 6.6 mg (typ.) 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-basevoltage VCBO 12 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 2 V Collector-current IC 80 mA Base-current IB 10 mA PC(Note 1) 900 mW Tj 150 °C Tstg −55 to 150 °C Collector power dissipation Junction temperature Storage temperature range Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-03-31 MT3S15TU Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Symbol Noise figure Typ. Max Unit GHz VCE=5 V, IC=50 mA 9.5 11.5 ⎯ VCE=5 V, IC=50 mA, f=500 MHz ⎯ 19.5 ⎯ 2 |S21e| (2) VCE=5 V, IC=50 mA, f=1 GHz 11.5 13.5 ⎯ NF VCE=5 V, IC=20 mA, f=1 GHz ⎯ 1.6 2 dB 28.5 32.5 ⎯ dBmW Min Typ. Max Unit rd 3 order intermodulation distortion output intercept point Min 2 fT |S21e| (1) Insertion gain Test Condition OIP3 VCE=5 V, IC=50 mA, f=500 MHz, ⊿f=1 MHz dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB=6 V, IE=0 A ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB=1 V, IC=0 A ⎯ ⎯ 100 nA DC current gain hFE VCE=5 V, IC=50 mA 100 160 250 ⎯ Reverse transfer capacitance Cre VCB=5 V, IE=0 A, f=1 MHz (Note 3) ⎯ 0.6 0.85 pF Note 3: Cre is measured using a 3-terminal method with capacitance bridge Caution: This device is sensitive to electrostatic discharge. Please make tool and equipment earthed enough when you handle. 2 2009-03-31 MT3S15TU hFE-IC 100 Collector-current IC(mA) COMMON EMITTER ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 100 10 1 10 COMMON EMITTER ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 10 1 0.1 0.01 0.001 0 100 Collector-current IC(mA) 0.2 720μA 640μA 560μA 480μA 60 400μA 320μA 40 240μA 20 160μA 80μA 0 0 2 4 6 ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 12 10 8 6 4 2 0 1 8 Collector-emitter voltage VCE(V) 10 16 14 12 f=1000MHz 10 8 6 4 1 10 16 ＶＣＥ＝５Ｖ ｆ＝１ＧＨｚ Ｔａ＝２５℃ 3.5 f=500MHz 20 18 Noise figure NF(dB) Insertion gain |S21e|2(dB) NF, Ga -IC 4 ＶＣＥ＝５Ｖ Ｔａ＝２５℃ 22 100 Collector-current IC(mA) |S21e|2-IC 24 1 14 Transition frequency fT(GHz) Collector-current IC(mA) IB=800μA 0.8 fT-IC ＣＯＭＭＯＮ ＥＭＩＴＴＥＲ Ｔａ＝２５℃ 80 0.6 Base-emitter voltage VBE(V) IC-VCE 100 0.4 14 Ｇａ 3 12 10 2.5 8 2 ＮＦ 1.5 1 4 0.5 2 0 100 0 100 1 Collector-current IC(mA) 6 Associated gain Ga(dB) 1000 DC current gain hFE IC-VBE 10 Collector-current IC(mA) 3 2009-03-31 MT3S15TU ＩＥ＝０ ｆ＝１ＭＨｚ Ｔａ＝２５℃ 1.8 1.6 1.4 Cob 1.2 1 0.8 Cre 0.6 0.4 0.2 0 0.1 1 10 Collector-base voltage VCB(V) Third order intermodulation distortion output intercept point OIP3(dBmW) OIP3-IC 2 Output capacitance Cob(pF) Reverse transfer capacitance Cre(pF) Cre,Cob-VCB 36 34 VCE=5V 32 30 VCE=4V 28 26 24 22 20 Ｐｉｎ＝－１５ｄＢｍＷ ｆ＝５００ＭＨｚ （⊿１ＭＨｚ） Ｔａ＝２５℃ 18 16 10 100 Collector-current IC(mA) Collector power dissipation PC(mW) PC-Ta 1000 900 The device is mounted on a ceramicboard(25.4mm×25.4mm×0.8mm(t)) 800 700 600 500 400 Device only 300 200 100 0 0 25 50 75 100 125 150 Ambient temperature Ta(°C ) 4 2009-03-31 MT3S15TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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