NSI45090JD D

NSI45090JDT4G
Adjustable Constant Current
Regulator & LED Driver
45 V, 90 − 160 mA + 15%, 2.7 W Package
The adjustable constant current regulator (CCR) is a simple,
economical and robust device designed to provide a cost effective
solution for regulating current in LEDs (similar to Constant Current
Diode, CCD). The CCR is based on Self-Biased Transistor (SBT)
technology and regulates current over a wide voltage range. It is
designed with a negative temperature coefficient to protect LEDs from
thermal runaway at extreme voltages and currents.
The CCR turns on immediately and is at 20% of regulation with
only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher
currents by attaching a resistor between Radj (Pin 3) and the Cathode
(Pin 4). The Radj pin can also be left open (No Connect) if no
adjustment is required. It requires no external components allowing it
to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive,
Industrial and Commercial Signage applications. This device is
available in a thermally robust package and is qualified to stringent
AEC−Q101 standard, which is lead-free RoHS compliant and uses
halogen-free molding compound, and UL94−V0 certified.
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Ireg(SS) = 90 − 160 mA
@ Vak = 7.5 V
Anode
1
3
Radj
4
Cathode
4
1 2
Features
•
•
•
•
•
•
•
•
•
•
•
Robust Power Package: 2.7 Watts
Adjustable up to 160 mA
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
UL94−V0 Certified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
Eliminates Additional Regulation
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automobile: Chevron Side Mirror Markers, Cluster, Display &
•
•
•
•
Instrument Backlighting, CHMSL, Map Light
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
Switch Contact Wetting
Application Note AND8391/D − Power Dissipation Considerations
Application Note AND8349/D − Automotive CHMSL
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 3
1
3
DPAK
CASE 369C
MARKING DIAGRAM
1
A
Radj
Y
WW
NSI90J
G
YWW
NSI
90JG
C
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NSI45090JDT4G
DPAK
(Pb−Free)
2500/Tape & Reel
NSV45090JDT4G
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSI45090JD/D
NSI45090JDT4G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Anode−Cathode Voltage
Symbol
Value
Vak Max
45
V
VR
500
mV
TJ, Tstg
−55 to +175
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Human Body Model
Machine Model
ESD
Unit
°C
Class 3A (4000 V)
Class B (200 V)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Symbol
Min
Ireg(SS)
76.5
Voverhead
Pulse Current @ Vak = 7.5 V (Note 3)
Ireg(P)
Capacitance @ Vak = 7.5 V (Note 4)
C
Capacitance @ Vak = 0 V (Note 4)
C
1.
2.
3.
4.
Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using FR−4 @ 300
Voverhead = Vin − VLEDs. Voverhead is typical value for 65% Ireg(SS).
Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1 msec.
f = 1 MHz, 0.02 V RMS.
Figure 1. CCR Voltage−Current Characteristic
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2
Typ
Max
Unit
90
103.5
mA
1.8
86.2
mm2
103
V
119.6
mA
17
pF
70
pF
2 oz. Copper traces, in still air.
NSI45090JDT4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
1771
14.16
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
RθJA
70.6
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 5)
RψJL4
6.8
°C/W
PD
2083
16.67
mW
mW/°C
RθJA
60
°C/W
RψJL4
6.3
°C/W
PD
2080
16.64
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
RθJA
60.1
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 7)
RψJL4
6.5
°C/W
PD
2441
19.53
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
RθJA
51.2
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 8)
RψJL4
5.9
°C/W
PD
2309
18.47
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
RθJA
54.1
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 9)
RψJL4
6.2
°C/W
PD
2713
21.71
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
RθJA
46.1
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 10)
RψJL4
5.7
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +175
°C
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Lead 4 (Note 6)
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
5. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 700 mm2, 1 oz. copper traces, still air.
10. FR−4 @ 700 mm2, 2 oz. copper traces, still air.
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NSI45090JDT4G
TYPICAL PERFORMANCE CURVES
110
110
TA = −40°C
100
90
TA = 25°C
80
TA = 85°C
70
TA = 125°C
60
50
[ −0.223 mA/°C
typ @ Vak = 7.5 V
Ireg(P), PULSE CURRENT (mA)
Ireg(SS), STEADY STATE CURRENT (mA)
Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air
[ −0.144 mA/°C
typ @ Vak = 7.5 V
[ −0.155 mA/°C
typ @ Vak = 7.5 V
40
30
20
10
0
1
3
4
5
6
7
8
2
Vak, ANODE−CATHODE VOLTAGE (V)
9
TA = 25°C
Radj = Open
100
95
90
Non−Repetitive Pulse Test
DC Test Steady State, Still Air, Radj = Open
0
105
85
3.0
10
4.0
5.0
6.0
7.0
8.0
9.0
Vak, ANODE−CATHODE VOLTAGE (V)
Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak)
105
Ireg, CURRENT REGULATION (mA)
Ireg(SS), STEADY STATE CURRENT (mA)
Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
Vak @ 7.5 V
TA = 25°C
Radj = Open
100
95
90
85
80
75
85
90
95
100
105
110
Ireg(P), PULSE CURRENT (mA)
115
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
Vak @ 7.5 V
TA = 25°C
Radj = Open
0
120
Vak @ 7.5 V
TA = 25°C
POWER DISSIPATION (mW)
Ireg(SS), STEADY STATE CURRENT (mA)
160
140
130
120
110
100
90
80
1
10
100
10
20
30
50
40
TIME (s)
60
70
80
90
Figure 5. Current Regulation vs. Time
Figure 4. Steady State Current vs. Pulse
Current Testing
150
10
1000
4800
700 mm2/2 oz
4500
4200
3900
500 mm2/2 oz
3600
3300
3000
300 mm2/2 oz
2700
2400
2100
2
1800 700 mm /1 oz
1500
500 mm2/1 oz
1200
900
300 mm2/1 oz
600
300
40
−40 −20
0
20
60
80 100 120 140
TA, AMBIENT TEMPERATURE (°C)
Radj (W), Max Power 125 mW
Figure 6. Ireg(SS) vs. Radj
Figure 7. Power Dissipation vs. Ambient
Temperature @ TJ = 1755C
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NSI45090JDT4G
APPLICATIONS INFORMATION
The CCR is a self biased transistor designed to regulate the
current through itself and any devices in series with it. The
device has a slight negative temperature coefficient, as
shown in Figure 2 – Tri Temp. (i.e. if the temperature
increases the current will decrease). This negative
temperature coefficient will protect the LEDS by reducing
the current as temperature rises.
The CCR turns on immediately and is typically at 20% of
regulation with only 0.5 V across it.
The device is capable of handling voltage for short
durations of up to 45 V so long as the die temperature does
not exceed 175°C. The determination will depend on the
thermal pad it is mounted on, the ambient temperature, the
pulse duration, pulse shape and repetition.
Single LED String
The CCR can be placed in series with LEDs as a High Side
or a Low Side Driver. The number of the LEDs can vary
from one to an unlimited number. The designer needs to
calculate the maximum voltage across the CCR by taking the
maximum input voltage less the voltage across the LED
string (Figures 8 and 9).
Figure 9.
Higher Current LED Strings
Two or more fixed current CCRs can be connected in
parallel. The current through them is additive (Figure 10).
Figure 8.
Figure 10.
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NSI45090JDT4G
Other Currents
LEDs on and off for a portion of a single cycle. This on/off
cycle is called the Duty cycle (D) and is expressed by the
amount of time the LEDs are on (Ton) divided by the total
time of an on/off cycle (Ts) (Figure 13).
The adjustable CCR can be placed in parallel with any
other CCR to obtain a desired current. The adjustable CCR
provides the ability to adjust the current as LED efficiency
increases to obtain the same light output (Figure 11).
Figure 13.
The current through the LEDs is constant during the period
they are turned on resulting in the light being consistent with
no shift in chromaticity (color). The brightness is in proportion
to the percentage of time that the LEDs are turned on.
Figure 14 is a typical response of Luminance vs Duty Cycle.
6000
ILLUMINANCE (lx)
5000
4000
Figure 11.
3000
Dimming using PWM
The dimming of an LED string can be easily achieved by
placing a BJT in series with the CCR (Figure 12).
2000
Lux
Linear
1000
0
0
10
20
30
40 50
60 70
DUTY CYCLE (%)
80
90 100
Figure 14. Luminous Emmitance vs. Duty Cycle
Reducing EMI
Designers creating circuits switching medium to high
currents need to be concerned about Electromagnetic
Interference (EMI). The LEDs and the CCR switch
extremely fast, less than 100 nanoseconds. To help eliminate
EMI, a capacitor can be added to the circuit across R2.
(Figure 12) This will cause the slope on the rising and falling
edge on the current through the circuit to be extended. The
slope of the CCR on/off current can be controlled by the
values of R1 and C1.
The selected delay / slope will impact the frequency that
is selected to operate the dimming circuit. The longer the
delay, the lower the frequency will be. The delay time should
not be less than a 10:1 ratio of the minimum on time. The
frequency is also impacted by the resolution and dimming
steps that are required. With a delay of 1.5 microseconds on
the rise and the fall edges, the minimum on time would be
30 microseconds. If the design called for a resolution of 100
dimming steps, then a total duty cycle time (Ts) of 3
milliseconds or a frequency of 333 Hz will be required.
Figure 12.
The method of pulsing the current through the LEDs is
known as Pulse Width Modulation (PWM) and has become
the preferred method of changing the light level. LEDs being
a silicon device, turn on and off rapidly in response to the
current through them being turned on and off. The switching
time is in the order of 100 nanoseconds, this equates to a
maximum frequency of 10 Mhz, and applications will
typically operate from a 100 Hz to 100 kHz. Below 100 Hz
the human eye will detect a flicker from the light emitted
from the LEDs. Between 500 Hz and 20 kHz the circuit may
generate audible sound. Dimming is achieved by turning the
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NSI45090JDT4G
Thermal Considerations
P D(MAX) +
As power in the CCR increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design and layout. Mounting pad configuration
on the PCB, the board material, and the ambient temperature
affect the rate of junction temperature rise for the part. When
the device has good thermal conductivity through the PCB,
the junction temperature will be relatively low with high
power applications. The maximum dissipation the device
can handle is given by:
T J(MAX) * T A
R qJA
Referring to the thermal table on page 2 the appropriate
RqJA for the circuit board can be selected.
AC Applications
The CCR is a DC device; however, it can be used with full
wave rectified AC as shown in application notes
AND8433/D and AND8492/D and design notes
DN05013/D and DN06065/D. Figure 15 shows the basic
circuit configuration.
Figure 15. Basic AC Application
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NSI45090JDT4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE E
A
E
C
A
b3
B
c2
4
L3
D
1
2
Z
Z
H
DETAIL A
3
L4
NOTE 7
b2
e
b
TOP VIEW
c
SIDE VIEW
0.005 (0.13)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
BOTTOM VIEW
ALTERNATE
CONSTRUCTION
C
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
SEATING
PLANE
A1
ROTATED 905 CW
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NSI45090JD/D