PD - 9.1506 PRELIMINARY IRFR/U9024N HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.175Ω G ID = -11A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds -11 -8 -44 38 0.30 ± 20 62 -6.6 3.8 -10 -55 to + 150 Units A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient Typ. Max. Units ––– ––– ––– 3.3 50 110 °C/W 6/26/97 IRFR/U9024N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -55 ––– ––– -2.0 2.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.05 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 55 23 37 LD Internal Drain Inductance ––– 4.5 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 350 170 92 V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.175 Ω VGS = -10V, ID = -6.6A -4.0 V VDS = VGS, I D = -250µA ––– S VDS = -25V, ID = -7.2A -25 VDS = -55V, VGS = 0V µA -250 VDS = -44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 VGS = -10V, See Fig. 6 and 13 ––– VDD = -28V ––– ID = -7.2A ns ––– RG = 24Ω ––– RD = 3.7Ω, See Fig. 10 D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 2.8mH RG = 25Ω, IAS = -6.6A. (See Figure 12) ISD ≤ -6.6A, di/dt ≤ 240A/µs, VDD ≤ V (BR)DSS, TJ ≤ 150°C Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -11 showing the A G integral reverse ––– ––– -44 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, V GS = 0V ––– 47 71 ns TJ = 25°C, IF = -7.2A ––– 84 130 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Pulse width ≤ 300µs; duty cycle ≤ 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact Uses IRF9Z24N data and test conditions. ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 IRFR/U9024N -I D , Drain-to-Source Current (A) TOP BOTTOM 100 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V TOP -I D , Drain-to-Source Current (A) 100 10 -4.5V 1 BOTTOM 10 -4.5V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 100 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.5 TJ = 25 ° C TJ = 150 ° C 1 V DS = -25V 20µs PULSE WIDTH 5 6 7 8 9 10 100 Fig 2. Typical Output Characteristics 100 0.1 1 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 -VDS , Drain-to-Source Voltage (V) 4 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 10 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics ID = -11A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 V GS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( ° C) Fig 4. Normalized On-Resistance Vs. Temperature IRFR/U9024N 20 V GS C is s C rs s C os s C , C a p a c ita n c e (p F ) 600 500 C is s 400 C os s = = = = 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd -V G S , G a te -to -S o u rc e V o lta g e (V ) 700 300 C rs s 200 100 0 10 V DS = -44 V V DS = -28 V 16 12 8 4 FOR TE ST C IR C U IT SE E FIG U R E 1 3 0 A 1 I D = -7 .2A 0 100 5 10 15 20 A 25 Q G , Total G ate C harge (nC) V D S , Drain-to-Source V oltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 100 TJ = 150 ° C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 25 °C 1 0.1 0.2 VGS = 0 V 0.6 0.9 1.3 -VSD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 10us 10 100us 1ms 1 10ms TC = 25 °C TJ = 150 °C Single Pulse 0.1 1.6 1 10 -VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRFR/U9024N 12.0 RD VDS VGS -I D , Drain Current (A) D.U.T. RG 9.0 + VDD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6.0 Fig 10a. Switching Time Test Circuit 3.0 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 T C , Case Temperature 125 150 ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.1 IRFR/U9024N L VDS - V V DD + DD D .U .T RG IA S - 20V tp A D R IV E R 0 .0 1 Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) 120 ID -3.0A -4.2A BOTTOM -6.6A TOP 100 80 60 40 20 0 25 50 75 100 125 Starting T J, Junction Temperature 150 ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit IRFR/U9024N Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% *** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS [ISD ] IRFR/U9024N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) LEA D AS SIG NME NT S 1 - G AT E 3 0.51 (.020) MIN. -B 1.52 (.060) 1.15 (.045) 4 - DRA IN 3X 2X 1.14 (.045) 0.76 (.030) 2 - DRA IN 3 - S OUR CE 0.89 (.035) 0.64 (.025) 0.25 ( .010) 0.58 (.023) 0.46 (.018) M A M B NOT ES: 2.28 (.090) 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4.57 (.180) 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA X. +0.16 (.006). Part Marking Information TO-252AA (D-Pak) E X A M P LE : T H IS IS A N IR F R 120 W IT H A S S E MB L Y LOT C OD E 9U 1P IN T E R N A T IO N A L R E CT IF IE R LO G O A IR F R 12 0 9U A S S E MB L Y L O T C OD E F IR S T P O R T ION OF P A R T N U MB E R 1P S E C O N D P O R T ION OF PART NUMBER IRFR/U9024N Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A- 0.58 (.023) 0.46 (.018) 1.27 ( .050) 0.88 ( .035) 5.46 (.215) 5.21 (.205) LEAD AS SIG NMENT S 4 1 - G AT E 2 - DRA IN 6.45 (.245) 5.68 (.224) 3 - S OURCE 4 - DRA IN 6.22 ( .245) 5.97 ( .235) 1.52 ( .060) 1.15 ( .045) 1 2 3 -B - NOT ES : 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982. 2.28 (.090) 1.91 (.075) 2 CO NTRO LLIN G DIMENS ION : INCH. 3 CO NFO RMS TO J EDE C O UT LINE TO -252AA . 9.65 (.380) 8.89 (.350) 4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP , SO LDER DIP MA X. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 2.28 (.090) 3X 1.14 (.045) 0.89 (.035) 0.89 (.035) 0.64 (.025) 0.25 (.010) 2X M A M B 0.58 (.023) 0.46 (.018) Part Marking Information TO-251AA (I-Pak) E X A M P LE : TH IS IS A N IR F U1 20 W IT H A S S E M B LY LO T C O D E 9U 1P IN TE RN A T IO N A L R E C T IF IE R LO GO IR F U 120 9U A S S E M B LY LO T C O D E F IR S T P O RT IO N O F P A R T N UM B E R 1P S E C O N D P O R T ION OF PART NUMBER IRFR/U9024N Tape & Reel Information TO-252AA TR TRR 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 1 2 .1 ( .4 76 ) 1 1 .9 ( .4 69 ) F E E D D IR E C TIO N TRL 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C TIO N N O T ES : 1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -5 4 1 . 1 3 IN C H 16 m m NO T ES : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 6/97 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/