IRFR/U9120N D -P ak T O -2 52 A A l l l l l l l I-P ak T O -25 1 A A Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description D VDSS = -100V The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are G possible in typical surface mount applications. RDS(on) = 0.48Ω ID = -6.6A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds -6.6 -4.2 -26 40 0.32 ± 20 100 -6.6 4.0 -5.0 -55 to + 150 Units A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA 2014-8-14 Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient 1 Typ. Max. Units ––– ––– ––– 3.1 50 110 °C/W www.kersemi.com IRFR/U9120N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -100 ––– ––– -2.0 1.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 47 28 31 LD Internal Drain Inductance ––– 4.5 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 350 110 70 V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.48 Ω VGS = -10V, ID = -3.9A -4.0 V VDS = VGS, ID = -250µA ––– S VDS = -50V, ID = -4.0A -25 VDS = -100V, VGS = 0V µA -250 VDS = -80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 27 ID = -4.0A 5.0 nC VDS = -80V 15 VGS = -10V, See Fig. 6 and 13 ––– VDD = -50V ––– ID = -4.0A ns ––– RG = 12 Ω ––– RD =12 Ω, See Fig. 10 D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -6.6 showing the A G integral reverse ––– ––– -26 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -3.9A, VGS = 0V ––– 100 150 ns TJ = 25°C, IF = -4.0A ––– 420 630 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 13mH RG = 25Ω, IAS = -3.9A. (See Figure 12) ISD ≤ -4.0A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact Uses IRF9520N data and test conditions. ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 2014-8-14 2 www.kersemi.com IRFR/U9120N 100 100 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 1 -4.5V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 1 -4.5V 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 100 TJ = 25 ° C TJ = 150 ° C 1 V DS = -50V 20µs PULSE WIDTH 4 5 6 7 8 9 10 100 ID = -6.7A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) -VGS , Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance Vs. Temperature Fig 3. Typical Transfer Characteristics 2014-8-14 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 0.1 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 10 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 3 www.kersemi.com IRFR/U9120N 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 800 600 Ciss Coss 400 Crss 200 ID = -4.0 A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 5 10 15 20 25 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us -II D , Drain Current (A) -ISD , Reverse Drain Current (A) VDS =-80V VDS =-50V VDS =-20V TJ = 150 ° C 10 TJ = 25 ° C 1 0.1 0.2 100us 1ms 1 10ms TC = 25 ° C TJ = 150 ° C Single Pulse V GS = 0 V 0.8 1.4 2.0 2.6 -VSD ,Source-to-Drain Voltage (V) 0.1 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 2014-8-14 10 Fig 8. Maximum Safe Operating Area 4 www.kersemi.com IRFR/U9120N 8.0 VGS -ID , Drain Current (A) RD VDS D.U.T. RG 6.0 + VDD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 2014-8-14 5 www.kersemi.com IRFR/U9120N - VV DD + DD D .U .T RG IA S -20V tp EAS , Single Pulse Avalanche Energy (mJ) L VDS A D R IV E R 0.0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS 250 ID -1.7A -2.5A BOTTOM -3.9A TOP 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA IG Charge Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform 2014-8-14 ID Current Sampling Resistors 6 www.kersemi.com IRFR/U9120N Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS 2014-8-14 7 www.kersemi.com IRFR/U9120N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) LE A D A S S IG N M E N T S 1 - GATE 3 0.51 (.020) M IN . -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) 2 - D R A IN 3 - SOURCE 4 - D R A IN 0.58 (.023) 0.46 (.018) M A M B N O TE S : 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2.28 (.090) 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O JE D E C O U TLIN E TO -252A A . 4.57 (.180) 4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP , S O LD E R D IP M A X. +0.16 (.006). Part Marking Information TO-252AA (D-Pak) E XA M P L E : T H IS IS A N IR F R 1 2 0 W IT H A S S E M B L Y LOT CODE 9U1P IN T E R N A T IO N A L R E C T IF IE R LO G O A IR F R 120 9U ASSEMBLY LOT CODE 2014-8-14 8 F IR S T P O R T IO N OF PART NUMBER 1P S E C O N D P O R T IO N OF PART NUMBER www.kersemi.com IRFR/U9120N Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A- 0.58 (.023) 0.46 (.018) 1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) LE A D A S S IG N M E N T S 4 1 - GATE 2 - D R A IN 6.45 (.245) 5.68 (.224) 3 - SOURCE 4 - D R A IN 6.22 (.245) 5.97 (.235) 1.52 (.060) 1.15 (.045) 1 2 3 -B- N O TE S : 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2.28 (.090) 1.91 (.075) 2 C O N T R O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO J E D E C O U T LIN E T O -252A A . 9.65 (.380) 8.89 (.350) 4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP , S O LD E R D IP M A X. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 2.28 (.090) 3X 1.14 (.045) 0.89 (.035) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 0.58 (.023) 0.46 (.018) 2X Part Marking Information TO-251AA (I-Pak) E X A M P L E : T H IS IS A N IR F U 1 2 0 W IT H A S S E M B L Y LO T CODE 9U1P IN T E R N A T IO N A L R E C T IF IE R LO GO IR F U 120 9U ASSEMBLY LOT CODE 2014-8-14 9 F IR S T P O R T IO N OF PART NUMBER 1P S E C O N D P O R T IO N OF PART NUMBER www.kersemi.com IRFR/U9120N Tape & Reel Information TO-252AA TR TRR 1 6.3 ( .6 41 ) 1 5.7 ( .6 19 ) 12 .1 ( .4 7 6 ) 11 .9 ( .4 6 9 ) 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N TRL F E E D D IR E C T IO N NOTES : 1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R . 2 . A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 1 3 IN C H 16 m m NO TES : 1. O U T L IN E C O N F O R M S T O E IA -4 81 . 2014-8-14 10 www.kersemi.com