SMD Type Product specification 2SB766,2SB766A Features Large collector power dissipation PC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol 2SB766 Rating -30 VCBO 2SB766A Collector-emitter voltage 2SB766 V -60 -25 VCEO 2SB766A Emitter-base voltage Unit V -50 VEBO -5 V Collector current IC -1 A Peak collector current ICP -1.5 A Collector power dissipation PC -1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification 2SB766,2SB766A Electrical Characteristics Ta = 25 Parameter Symbol Collector-base voltage 2SB766 VCBO Testconditons Min IC = -10 ìA, IE = 0 2SB766A Collector-emitter voltage 2SB766 Typ Max -30 Unit V -60 VCEO -25 IC = -2 mA, IB = 0 2SB766A V -50 Emitter-base voltage VEBO IE = -10ìA, IC = 0 Collector-base cutoff current ICBO VCB = -20 V, IE = 0 Forward current transfer ratio hFE -5 V -0.1 VCE = -10 V, IC = -500 mA 85 VCE = -5 V, IC = -1 A 50 nA 340 Collector-emitter saturation voltage VCE(sat) IC = -500 mA, IB = -50 mA -0.2 -0.4 V Base-emitter saturation voltage VBE(sat) IC = -500 mA, IB = -50 mA -0.85 -1.2 V Transition frequency fT Collector output capacitance Cob VCB = -10 V, IE = 50 mA, f = 200 MHz 200 VCB = -10 V, IE = 0, f = 1 MHz 20 MHz 30 pF hFE Classification 2SB766(A)/2SB766A(B) Marking Rank Q R S hFE 85 170 120 240 17 340 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2