Transistors SMD Type Product specification 2SD2474 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V Collector current IC 2.4 A Peak collector current ICP 2 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit 1 ìA Collector-base cutoff current ICBO VCB = 7 V, IE = 0 Collector-base voltage VCBO IC = 10 ìA, IE = 0 10 V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 10 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 7 V Forward current transfer ratio Collector-emitter saturation voltage Transition frequency hFE fT Collector output capacitance VCE = 2 V, IC = 200 mA VCE(sat) IC = 1 A, IB = 10 mA Cob 200 800 0.19 0.25 V VCB = 6 V, IE = -50 mA, f = 200 MHz 60 MHz VCB = 6 V, IE = 0, f = 1 MHz 100 pF Marking Marking 2F http://www.twtysemi.com [email protected] 4008-318-123 1 of 1