Product specification 2SB710A SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Large collector current IC. 1 0.55 insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package, allowing downsizing of the equipment and automatic 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -0.5 A Peak collector current ICP -1 A Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -60 V Collector-emitter voltage VCEO IC = -10 mA, IB = 0 -50 V -5 Emitter-base voltage VEBO IE = -10 ìA, IC = 0 Collector-base cutoff current ICBO VCB = -20 V, IE = 0 Forward current transfer ratio hFE VCE = -10 V, IC = -150 mA V -0.1 85 µA 340 Collector-emitter saturation voltage VCE(sat) IC = -300 mA, IB = -30 mA -0.35 -0.6 V Base-emitter saturation voltage VBE(sat) IC = -300 mA, IB = -30 mA -1.1 -1.5 V Transition frequency fT Collector output capacitance Cob VCB = -10 V, IE = 50 mA , f = 200 MHz VCB = -10V , IE = 0 , f = 1.0MHz 200 6 MHz 15 pF hFE Classification Marking DQ DR DS hFE 85 170 120 240 170 340 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1