TYSEMI 2SB710A

Product specification
2SB710A
SOT-23
Features
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Large collector current IC.
1
0.55
insertion through the tape packing and the magazine packing.
+0.1
1.3-0.1
+0.1
2.4-0.1
Mini type package, allowing downsizing of the equipment and automatic
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-0.5
A
Peak collector current
ICP
-1
A
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = -10 ìA, IE = 0
-60
V
Collector-emitter voltage
VCEO
IC = -10 mA, IB = 0
-50
V
-5
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
Collector-base cutoff current
ICBO
VCB = -20 V, IE = 0
Forward current transfer ratio
hFE
VCE = -10 V, IC = -150 mA
V
-0.1
85
µA
340
Collector-emitter saturation voltage
VCE(sat) IC = -300 mA, IB = -30 mA
-0.35
-0.6
V
Base-emitter saturation voltage
VBE(sat) IC = -300 mA, IB = -30 mA
-1.1
-1.5
V
Transition frequency
fT
Collector output capacitance
Cob
VCB = -10 V, IE = 50 mA , f = 200 MHz
VCB = -10V , IE = 0 , f = 1.0MHz
200
6
MHz
15
pF
hFE Classification
Marking
DQ
DR
DS
hFE
85 170
120 240
170 340
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4008-318-123
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