MMVL3401T1G Silicon Pin Diode This device is designed primarily for VHF band switching applications but is also suitable for use in general−purpose switching circuits. Supplied in a Surface Mount package. Features http://onsemi.com • Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability SILICON PIN SWITCHING DIODE • Low Capacitance: 0.7 pF Typ at VR = 20 Vdc • Very Low Series Resistance at 100 MHz: 0.34 W (Typ) @ IF = 10 mAdc 1 CATHODE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2 ANODE Compliant MAXIMUM RATINGS Rating 2 Symbol Value Unit Continuous Reverse Voltage VR 35 Vdc Peak Forward Current IF 20 mAdc Symbol Max Unit 200 1.57 mW mW/°C RqJA 635 °C/W TJ, Tstg 150 °C 1 SOD−323 CASE 477 STYLE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR4 Minimum Pad MARKING DIAGRAM 4D M G G 4D = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMVL3401T1G Package Shipping† SOD−323 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 4 1 Publication Order Number: MMVL3401T1/D MMVL3401T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 35 − − Vdc Diode Capacitance (VR = 20 Vdc) CT − − 1.0 pF Series Resistance (Figure 5) (IF = 10 mAdc, f = 100 MHz) RS − − 0.7 W Reverse Leakage Current (VR = 25 Vdc) IR − − 0.1 mAdc Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) TYPICAL CHARACTERISTICS 50 1.4 I F , FORWARD CURRENT (mA) R S , SERIES RESISTANCE (OHMS) 1.6 1.2 TA = 25°C 1.0 0.8 0.6 0.4 40 30 TA = 25°C 20 10 0.2 0 0 2.0 4.0 6.0 8.0 12 10 14 0 0.5 16 0.6 0.7 0.8 0.9 1.0 +100 +140 IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 20 100 I R , REVERSE CURRENT ( μA) C T , DIODE CAPACITANCE (pF) 40 10 7.0 5.0 TA = 25°C 2.0 1.0 0.7 0.5 10 4.0 VR = 25 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 0.2 +3.0 0 3.0 6.0 9.0 12 15 18 21 24 0.001 60 27 VR, REVERSE VOLTAGE (VOLTS) 20 0 +20 +60 TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance Figure 4. Leakage Current http://onsemi.com 2 MMVL3401T1G PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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