TYSEMI DTA123YE

Transistors
IC
SMD Type
Product specification
DTA123YE
SOT-523
Unit: mm
+0.1
1.6-0.1
+0.1
1.0-0.1
+0.05
0.2-0.05
1
+0.15
1.6-0.15
2
+0.05
0.8-0.05
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors.
+0.01
0.1-0.01
0.55
Features
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the inout,and parasltic effects
are almost completely eliminating parasitic effects.
0.35
3
+0.25
0.3-0.05
Only the on/off conditions need to be set for operation.
0.5
+0.1
-0.1
+0.1
0.8-0.1
+0.05
0.75-0.05
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings TA=25
Parameter
Symbol
Rating
Unit
Supply voltage
VCC
-50
V
Input voltage
VIN
-12 to +5
V
Collector current
IO
-100
IC(MAX.)
-100
power dissipation
PD
150
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
mA
mW
Electrical Characteristics TA=25
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Symbol
Test conditions
VI(off)
VCC = -5 V , IO = -100 uA
VI(on)
VO= -0.3 V , IO = -20 mA
VO(on)
II
Min.
Typ.
-0.3
-3
IO/II =-10 mA , II = -0.5 mA
-0.1
VI = -5 V
ID(off)
VCC = -50 V , VI = 0 V
GI
IO = -10mA,VO = -5V
Max.
V
-3.8
mA
-0.5
A
33
R1
1.54
2.2
2.86
Resistance ratio
R2/R1
3.6
4.5
5.5
fT
V
-0.3
Input resistance
Transition frequency
Unit
VCE = -10 V , IE = 5 mA , f = 100MHz *
250
k
MHz
*Transition frequency of the device
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4008-318-123
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