Transistors IC Transistor SMD Type Product specification FMMT614 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE up to 5k at IC= 500mA 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast switching +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low VCE(sat) at High IC 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 10 V Collector current IC 500 mA Peak collector current ICM 2 A Power dissipation Ptot 500 mW Tj,Tstg -55 to +150 Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC Transistor SMD Type Product specification FMMT614 Electrical Characteristics Ta = 25 Min Typ Collector-base breakdown voltage Parameter V(BR)CBO IC=10ìA Symbol Testconditons 120 300 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 100 130 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA 10 Collector cutoff current ICBO VCB=100V,IE=0 Collector cutoff current ICES VCE=100V,IE=0 Emitter cut-off current IEBO VEB=8V Max 10 0.02 Unit V 10 nA 10 ìA 100 nA Collector-emitter saturation voltage * IC=500mA,IB=5mA VCE(sat) IC=100mA,IB=0.1mA 0.9 0.78 1.0 0.9 V Base-emitter saturation voltage * VBE(sat) IC=500mA,IB=5mA 1.7 1.9 V Base-emitter voltage * VBE(ON) IC=500mA,VCE=5V 1.5 1.8 V hFE DC current gain * Output capacitance Switching times * Pulse test: tp = 300 ìs; d IC=100mA,VCE=5V 15K IC=500mA,VCE=5V 5K Cobo VCB=10V,f=100MHz 6 pF ton IC=100ìA, VS=10V 0.7 ìs toff IB=0.1mA 2.5 ìs 0.02. Marking Marking 614 http://www.twtysemi.com [email protected] 4008-318-123 2of 2