Transistors IC SMD Type Product specification FMMT489 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Very low equivalent on-resistance 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Peak collector current ICM 4 A Collector current IC 1 A IB 200 mA Ptot 500 mW Tj,Tstg -55 to +150 Base current Power dissipation Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 50 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 30 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 Collector cutoff current ICBO Emitter cut-off current IEBO VCB=30V nA VEB=4V 100 nA Collector-emitter saturation voltage * VCE(sat) IC=1A,IB=100mA Base-emitter saturation voltage * VBE(sat) IC=1A,IB=100mA Base-emitter voltage * VBE(ON) IC=1A,VCE=2V Static Forward Current Transfer Ratio* Current-gain-bandwidth product Output capacitance * Pulse test: tp hFE fT Cobo 300 ìs; d V 100 0.3 V V 1.0 IC=1mA,VCE=2V 100 IC=1A,VCE=2V 100 IC=2A,VCE=2V 60 IC=4A,VCE=2V 20 IC=50mA,VCE=10V,f=100MHz 150 300 MHz 10 VCB=10V,f=1MHz V pF 0.02. Marking Marking 489 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1