Transistors IC SMD Type Product specification FMMTL717 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -12 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -5 V Collector current IC -1.25 A Peak pulse current ICM -4 A IB -200 mA Ptot -500 mW Tj,Tstg -55 to +150 Base current Power dissipation Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification FMMTL717 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -12 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA* -12 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 -8.5 V Collector-base cut-off current ICBO Emitter-base current IEBO VCB=-10V -10 nA VEB=-4V -10 nA -40 -140 -240 -290 mV -24 -94 -160 -200 Collector-emitter saturation voltage IC=-100mA, IB=-10mA* I VCE(sat) C=-500mA, IB=-20mA* IC=-1A, IB=-50mA* IC=-1.25A,IB=-50mA Base-emitter saturation voltage VBE(sat) IC=-1.25A, IB=-50mA* -970 -1100 mV VBE(on) IC=-1.25A, VCE=-2V* -875 mV Base-emitter ON voltage DC current gain hFE Current-gain-bandwidth product fT IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* 300 300 180 100 50 -1000 490 450 275 180 110 IC=-50mA, VCE=-10V f=100MHz 205 MHz Output capacitance Cobo VCB=-10V, f=1MHz 15 Turn-on time t(on) IC=-1A, VCC=-10V 76 ns Turn-off time t(off) IB1=IB2=-10mA 149 ns * Pulse test: tp 300 ìs; d 20 pF 0.02. Marking Marking L77 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2