TPCF8305
MOSFETs
Silicon P-Channel MOS (U-MOS)
TPCF8305
1. Applications
•
Notebook PCs
•
Mobile Handsets
2. Features
(1)
Small footprint due to a small and thin package
(2)
Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V)
(3)
Low leakage current: IDSS = -10 µA (max) (VDS = -20 V)
(4)
Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA)
3. Packaging and Internal Circuit
1: Source1
2: Gate1
3: Source2
4: Gate2
5, 6: Drain2
7, 8: Drain1
VS-8
unless otherwise specified)
25
4. Absolute Maximum Ratings (Note) (Ta = 25
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
VDSS
-20
Gate-source voltage
VGSS
±12
Drain current (DC)
(Note 1)
ID
-4
Drain current (pulsed)
(Note 1)
IDP
-16
Power dissipation (single operation)
(t = 5 s)
(Note 2), (Note 4)
PD(1)
1.35
Power dissipation
(per device for dual operation)
(t = 5 s)
(Note 2), (Note 5)
PD(2)
1.12
Power dissipation (single operation)
(t = 5 s)
(Note 3), (Note 4)
PD(1)
0.53
Power dissipation
(per device for dual operation)
(t = 5 s)
(Note 3), (Note 5)
PD(2)
0.33
(Note 6)
EAS
10.4
Single-pulse avalanche energy
A
W
mJ
Avalanche current
IAR
-4
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
/W
Channel-to-ambient thermal resistance
(single operation)
(t = 5 s)
(Note 2), (Note 4)
Rth(ch-a)(1)
92.5
Channel-to-ambient thermal resistance
(per device for dual operation)
(t = 5 s)
(Note 2), (Note 5)
Rth(ch-a)(2)
111.6
Channel-to-ambient thermal resistance
(single operation)
(t = 5 s)
(Note 3), (Note 4)
Rth(ch-a)(1)
235.8
Channel-to-ambient thermal resistance
(per device for dual operation)
(t = 5 s)
(Note 3), (Note 5)
Rth(ch-a)(2)
378.7
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single
operation, power is supplied to only one of the two devices.)
Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power
is evenly supplied to both devices.)
Note 6: VDD = -16 V, Tch = 25 (initial), L = 0.5 mH, RG = 25 Ω, IAR = -4 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Note:
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
This transistor is sensitive to electrostatic discharge and should be handled with care.
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unless otherwise specified)
6. Electrical Characteristics (Ta = 25
25
6.1. Static Characteristics
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
µA
Gate leakage current
IGSS
VGS = ±12 V, VDS = 0 V
±0.1
Drain cut-off current
IDSS
VDS = -20 V, VGS = 0 V
-10
V(BR)DSS
ID = -10 mA, VGS = 0 V
-20
V(BR)DSX
ID = -10 mA, VGS = 8 V
-12
VDS = -10 V, ID = -0.2 mA
-0.5
-1.2
VGS = -1.8 V, ID = -1 A
125
265
VGS = -2.0 V, ID = -2 A
95
160
VGS = -2.5 V, ID = -2 A
65
83
VGS = -4.5 V, ID = -2 A
47
58
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 7)
Gate threshold voltage
Vth
Drain-source on-resistance
RDS(ON)
V
mΩ
Note 7: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics
Characteristics
Symbol
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Test Condition
VDS = -10 V, VGS = 0 V, f = 1 MHz
Typ.
Max
Unit
680
pF
85
108
8.7
Switching time (rise time)
tr
Switching time (turn-on time)
ton
16
tf
18
toff
70
Min
Typ.
Max
Unit
9.2
nC
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1.
Min
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics
Characteristics
Symbol
Total gate charge
(gate-source plus gate-drain)
Test Condition
VDD ≈ -16 V, VGS = -5 V, ID = -4 A
Qg
Gate-source charge 1
Qgs1
1.8
Gate-drain charge
Qgd
2.0
Min
Typ.
Max
Unit
6.4. Source-Drain Characteristics
Characteristics
Pulsed reverse drain current
Diode forward voltage
Symbol
(Note 8)
Test Condition
IDRP
-16
A
VDSF
IDR = -4 A, VGS = 0 V
1.2
V
Note 8: Ensure that the channel temperature does not exceed 150.
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta
(Guaranteed Maximum)
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Fig. 8.12 rth - tw
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 0.011 g (typ.)
Package Name(s)
TOSHIBA: 2-3U1S
Nickname: VS-8
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information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
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