TPN2R203NC
MOSFETs
Silicon N-channel MOS (U-MOS)
TPN2R203NC
1. Applications
•
Power Management Switches
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V)
(2)
Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(3)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Drain current (DC)
(Silicon limit)
(Note 1), (Note 2)
ID
100
A
Drain current (DC)
(Tc = 25 )
(Note 1)
ID
45
A
(t = 1 ms)
(Note 1)
IDP
200
A
PD
42
W
Drain current (pulsed)
Power dissipation
(Tc = 25 )
Power dissipation
(t = 10 s)
(Note 3)
PD
1.9
W
Power dissipation
(t = 10 s)
(Note 4)
PD
0.7
W
(Note 5)
EAS
126
mJ
IAR
45
A
Single-pulse avalanche energy
Avalanche current
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
(Tc = 25 )
Symbol
Max
Unit
Rth(ch-c)
2.97
/W
Channel-to-ambient thermal resistance
(t = 10 s)
(Note 3)
Rth(ch-a)
65.7
/W
Channel-to-ambient thermal resistance
(t = 10 s)
(Note 4)
Rth(ch-a)
178
/W
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Limited by silicon chip capability.
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: VDD = 24 V, Tch = 25 (initial), L = 0.048 mH, IAR = 45 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Note:
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Gate leakage current
Drain cut-off current
Test Condition
IGSS
VGS = ±20 V, VDS = 0 V
Min
Typ.
Max
Unit
±0.1
µA
IDSS
VDS = 30 V, VGS = 0 V
10
µA
V(BR)DSS
ID = 10 mA, VGS = 0 V
30
V
V(BR)DSX
ID = 10 mA, VGS = -20 V
15
V
Vth
VDS = 10 V, ID = 0.5 mA
1.3
2.3
V
Drain-source on-resistance
RDS(ON)
VGS = 4.5 V, ID = 22.5 A
2.8
3.6
mΩ
Drain-source on-resistance
RDS(ON)
VGS = 10 V, ID = 22.5 A
1.8
2.2
mΩ
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 6)
Gate threshold voltage
Note 6: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
2230
pF
Input capacitance
Reverse transfer capacitance
Crss
160
pF
Output capacitance
Coss
650
pF
Switching time (rise time)
tr
9
ns
Switching time (turn-on time)
ton
14
ns
tf
24
ns
toff
68
ns
Switching time (fall time)
Switching time (turn-off time)
See Fig. 6.2.1
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain)
Symbol
Qg
Gate-source charge 1
Qgs1
Gate-drain charge
Qgd
Test Condition
VDD ≈ 15 V, VGS = 10 V,
ID = 45 A
Min
Typ.
Max
Unit
34
nC
8
nC
6
nC
Max
Unit
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ.
Reverse drain current (pulsed) (1 ms) (Note 7)
IDRP
200
A
Diode forward voltage
VDSF
IDR = 45 A, VGS = 0 V
-1.2
V
Note 7: Ensure that the channel temperature does not exceed 150 .
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta
(Guaranteed Maximum)
Fig. 8.12 PD - Tc
(Guaranteed Maximum)
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Fig. 8.13 rth - tw
(Guaranteed Maximum)
Fig. 8.14 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 0.02 g (typ.)
Package Name(s)
TOSHIBA: 2-3X1S
Nickname: TSON Advance
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