TK34E10N1
MOSFETs
Silicon N-channel MOS (U-MOS-H)
TK34E10N1
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 7.9 mΩ (typ.) (VGS = 10 V)
(2)
Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
(3)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
TO-220
unless otherwise specified)
25
4. Absolute Maximum Ratings (Note) (Ta = 25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
(Tc = 25)
(Note 1)
Drain current (DC)
Drain current (pulsed)
Power dissipation
(t = 1 ms)
Rating
Unit
VDSS
100
V
VGSS
±20
ID
75
A
(Note 1,2)
ID
34
(Note 1)
IDP
147
PD
103
W
(Note 3)
EAS
64
mJ
(Tc = 25)
Single-pulse avalanche energy
Symbol
Avalanche current
IAR
34
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
1.21
/W
Channel-to-ambient thermal resistance
Rth(ch-a)
83.3
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted with heatsink so that Rth(ch-a) becomes 3.57/W.
Note 3: VDD = 80 V, Tch = 25 (initial), L = 42.9 µH, RG = 1.2 Ω, IAR = 34 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
IDSS
VDS = 100 V, VGS = 0 V
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 4)
Typ.
Max
Unit
±0.1
µA
10
ID = 10 mA, VGS = -20 V
65
VDS = 10 V, ID = 0.5 mA
2.0
4.0
VGS = 10 V, ID = 17 A
7.9
9.5
ID = 10 mA, VGS = 0 V
V(BR)DSX
Vth
RDS(ON)
Min
100
V(BR)DSS
Gate threshold voltage
Drain-source on-resistance
Test Condition
V
mΩ
Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Input capacitance
Symbol
Ciss
Test Condition
VDS = 50 V, VGS = 0 V, f = 1 MHz
Min
Typ.
Max
Unit
2600
pF
Reverse transfer capacitance
Crss
23
Output capacitance
Coss
450
2.1
Ω
12
ns
Gate resistance
rg
Switching time (rise time)
tr
Switching time (turn-on time)
ton
31
tf
18
toff
50
Min
Typ.
Max
Unit
38
nC
Qgs1
13
Gate-drain charge
Qgd
9.7
Gate switch charge
QSW
15
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1
Fig. 6.2.1 Switching Time Test Circuit
unless otherwise specified)
6.3. Gate Charge Characteristics (Ta = 25
25
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Symbol
Qg
Test Condition
VDD ≈ 80 V, VGS = 10 V, ID = 34 A
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TK34E10N1
unless otherwise specified)
6.4. Source-Drain Characteristics (Ta = 25
25
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
A
Reverse drain current (DC)
(Note 5)
IDR
34
Reverse drain current (pulsed)
(Note 5)
IDRP
147
-1.2
Diode forward voltage
VDSF
IDR = 34 A, VGS = 0 V
IDR = 34 A, VGS = 0 V
-dIDR/dt = 100 A/µs
61
ns
110
nC
Reverse recovery time
(Note 6)
trr
Reverse recovery charge
(Note 6)
Qrr
V
Note 5: Ensure that the channel temperature does not exceed 150.
Note 6: Ensure that VDS peak does not exceed VDSS.
7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
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Fig. 8.12 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.14 EAS - Tch
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.15 Test Circuit/Waveform
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 1.93 g (typ.)
Package Name(s)
TOSHIBA: 2-10X1A
Nickname: TO-220
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