MA-COM MAPL-000978

MAPL-000978-0075LF
MAPL-000978-0075LN
LDMOS Pulsed Power Transistor
75W, 978 MHz, 400µs Pulse, 1% Duty
M/A-COM Products
Released, 23 Jun 09
Product Image
Features
•
•
•
•
•
Gold LDMOS microwave power transistor
Common source configuration
Broadband Class AB operation
RoHS Compliant
Avionics applications specifically designed for
Internal input and output impedance matching.
• Integrated ESD Protection
• RoHS Compliant
MAPL-000978-0075LF
Absolute Maximum Ratings at 25°C
Symbol
Rating
Units
Drain-Source Voltage
Parameter
VDSS
60
V
Gate-Source Voltage
VGS
-0.7 to 15
V
Total Power Dissipation
(TC = 25°C)
Storage Temperature
PTOT
350
W
TSTG
-65 to +175
°C
TJ
200
°C
Junction Temperature
MAPL-000978-0075LN
Thermal Characteristics
Parameter
MAXIMUM RATINGS
Test Conditions
Thermal Resistance, Junction to Case
VDD = 28V, IDQ = 250mA, Pout = 75W
Symbol
Max
Units
RTH(JC)
0.5
°C/W
Typical RF Performance
Freq.
(MHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Id-Pk
(A)
Eff
(%)
RL
(dB)
978
1.1
75
18.2
5.3
50
-16
VSWR-S VSWR-T
(2:1)
(5:1)
S
P
P1dB
Pout (W)
Gain (dB)
81
18.0
Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:
Vdd=28V, Idq=250mA (pulsed), F=978MHz, Pulse=400us, Duty=1%.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MAPL-000978-0075LF
MAPL-000978-0075LN
LDMOS Pulsed Power Transistor
75W, 978 MHz, 400µs Pulse, 1% Duty
M/A-COM Products
Released, 23 Jun 09
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
DC CHARACTERISTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 30mA
BVDSS
60
-
-
V
Drain Leakage Current
VDS = 28V, VGS = 0V
IDSS
-
-
50
µA
Gate-Source Leakage Current
VGS = 10V, VDS = 0V
IGSS
-
-
2
µA
Gate Threshold Voltage
VDS = 10V, ID = 30mA
VGS (th)
2
2.5
4
V
Forward Transconductance
VGS = 10V, ID = 1A
GM
1.5
-
-
S
VDS = 28V, VGS = 0V, F = 1MHz
Ciss
-
200
-
pF
Output Capacitance
VDS = 28V, VGS = 0V, F = 1MHz
Coss
-
83
-
pF
Reverse Transfer Capacitance
VDS = 28V, VGS = 0V, F = 1MHz
Crss
-
3.0
-
pF
Power Gain
VDD = 28V, IDQ = 250mA, Pout = 75W
GP
16.5
18.2
-
dB
Drain Efficiency
VDD = 28V, IDQ = 250mA, Pout = 75W
ηD
45
50
-
%
Input Return Loss
VDD = 28V, IDQ = 250mA, Pout = 75W
RL
-
-16
-10
dB
1dB Compression Point
VDD = 28V, IDQ = 250mA
P1dB
-
81
-
W
Load Mismatch Stability
VDD = 28V, IDQ = 250mA, Pout = 75W
VSWR-S
-
-
2:1
-
Load Mismatch Tolerance
VDD = 28V, IDQ = 250mA, Pout = 75W
VSWR-T
-
-
5:1
-
DYNAMIC CHARACTERISTICS
Input Capacitance
(capacitance values without internal matching)
RF FUNCTIONAL TESTS
Test Fixture Impedance
F (MHz)
ZIF (Ω)
ZOF (Ω)
978
9.8 + j1.4
1.5 + j0.1
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MAPL-000978-0075LF
MAPL-000978-0075LN
LDMOS Pulsed Power Transistor
75W, 978 MHz, 400µs Pulse, 1% Duty
M/A-COM Products
Released, 23 Jun 09
Output Power vs. Input Power [dBm]
100
50.0
80
48.5
Pout [dBm]
Pout (watts)
Output Power vs. Input Power
60
47.0
40
45.5
20
44.0
25.0
0.0
0.5
1.0
1.5
2.0
27.0
Pin (watts)
31.0
33.0
Pin [dBm]
RF Power Gain vs. Output Power
Drain Efficiency vs. Output Power
20
60.0
19
52.5
Drain Efficiency (%)
Gain (dB)
29.0
18
17
16
45.0
37.5
30.0
20
40
60
Pout (w atts)
80
100
20
40
60
80
100
Pout (w atts)
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MAPL-000978-0075LF
MAPL-000978-0075LN
LDMOS Pulsed Power Transistor
75W, 978 MHz, 400µs Pulse, 1% Duty
M/A-COM Products
Released, 23 Jun 09
Test Fixture Circuit Dimensions
Test Fixture Assembly
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MAPL-000978-0075LF
MAPL-000978-0075LN
LDMOS Pulsed Power Transistor
75W, 978 MHz, 400µs Pulse, 1% Duty
M/A-COM Products
Released, 23 Jun 09
Outline Drawings
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.