UF28100H

UF28100H
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
M/A-COM Products
Released - Ver 08.07
Features
•
•
•
•
•
•
PACKAGE OUTLINE
N-channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than competitive devices
RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS
65
V
Gate-Source Voltage
VGS
20
V
Drain-Source Current
IDS
12*
A
Power Dissipation
PD
250
W
Junction Temperature
TJ
200
°C
Storage Temperature
TSTG
-55 to +150
°C
θJC
0.7
°C/W
Thermal Resistance
TYPICAL DEVICE IMPEDANCES
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
100
4.5-j6.0
14.5+j0.5
300
2.25-j1.75
7.5j1.0
500
1.5+j5.5
3.5+j3.5
VDD=28V, IDQ=600 Ma, POUT =100.0 W
ZIN is the series equivalent input impedance of the device from gate to gate.
ZLOAD is the optimum series equivalent load impedance as measured from drain
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Symbol
Min
Max
Units
Test Conditions
BVDSS
65
-
V
VGS = 0.0 V , IDS = 15.0 mA
IDSS
-
3.0
mA
VGS = 28.0 V , VGS = 0.0 V
IGSS
-
3.0
µA
VGS = 20.0 V , VDS = 0.0 V
VGS(TH)
2.0
6.0
V
VDS = 10.0 V , IDS = 300.0 mA
Forward Transconductance
GM
1.5
-
S
VDS = 10.0 V , IDS 3000.0 mA , Δ VGS = 1.0V, 80 μs Pulse
Input Capacitance
CISS
-
135
pF
VDS = 28.0 V , F = 1.0 MHz
Output Capacitance
COSS
-
90
pF
VDS = 28.0 V , F = 1.0 MHz
Reverse Capacitance
CRSS
-
24
pF
VDS = 28.0 V , F = 1.0 MHz
GP
10
-
dB
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
Drain Efficiency
ŋD
50
-
%
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
Return Loss
RL
10
-
dB
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
VSWR-T
-
30:1
-
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
Gate Threshold Voltage
Power Gain
Load Mismatch Tolerance
*Per side
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF28100H
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
M/A-COM Products
Released - Ver 08.07
Typical Broadband Performance Curves
70
60
50
40
100
100
80
60
40
20
0
200
300
POWER OUTPUT VS SUPPLY VOLTAGE
PIN=10 W IDQ=600 mA F=500 MHz
120
POPWER OUTPUT (W)
EFFICIENCY (%)
80
EFFICIENCY VS FREQUENCY
PIN=10W IDD =600 mA (Push pull device)
400
500
14
16
20
24
28
SUPPLY VOLTAGE (V)
FREQUENCY (MHz)
POWER OUTPUT VS POWER INPUT
VDD =28 V IDQ =600 mA (Push pull device)
POWER OUTPUT (W)
120
200MHz
100
400MHz
500MHz
80
300MHz
60
40
20
0
0
1
2
4
6
8
10
12
POWER INPUT (W)
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
32
UF28100H
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
M/A-COM Products
Released - Ver 08.07
TEST FIXTURE SCHEMATIC
TEST FIXTURE ASSEMBLY
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.