UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 12* A Power Dissipation PD 250 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to +150 °C θJC 0.7 °C/W Thermal Resistance TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) ZLOAD (Ω) 100 4.5-j6.0 14.5+j0.5 300 2.25-j1.75 7.5j1.0 500 1.5+j5.5 3.5+j3.5 VDD=28V, IDQ=600 Ma, POUT =100.0 W ZIN is the series equivalent input impedance of the device from gate to gate. ZLOAD is the optimum series equivalent load impedance as measured from drain to drain. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Symbol Min Max Units Test Conditions BVDSS 65 - V VGS = 0.0 V , IDS = 15.0 mA IDSS - 3.0 mA VGS = 28.0 V , VGS = 0.0 V IGSS - 3.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 300.0 mA GM 1.5 - S VDS = 10.0 V , IDS 3000.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 135 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 90 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 24 pF VDS = 28.0 V , F = 1.0 MHz GP 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Drain Efficiency ŋD 50 - % VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Return Loss RL 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz VSWR-T - 30:1 - VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Gate Threshold Voltage Forward Transconductance Power Gain Load Mismatch Tolerance *Per side 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Typical Broadband Performance Curves 70 60 50 40 100 100 80 60 40 20 0 200 300 POWER OUTPUT VS SUPPLY VOLTAGE PIN=10 W IDQ=600 mA F=500 MHz 120 POPWER OUTPUT (W) EFFICIENCY (%) 80 EFFICIENCY VS FREQUENCY PIN=10W IDD =600 mA (Push pull device) 400 500 14 16 20 24 28 SUPPLY VOLTAGE (V) FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =600 mA (Push pull device) POWER OUTPUT (W) 120 200MHz 100 400MHz 500MHz 80 300MHz 60 40 20 0 0 1 2 4 6 8 10 12 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 32 UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.