CHENDA MM1Z24

MM1Z2V0~MM1Z120
SILICON PLANAR ZENER DIODES
Silicon planar zener diode in a small plastic
1.65(.065)
Cathode
1.55(.061)
1
2
Anode
Top view
3.9(0.154)
2.7(0.106)
3.7(0.146)
2.6(0.102)
Simplified outline SOD-123 and symbol
Features
Dimensions in millimeters and (inches)
Total power dissipation: max. 500 mW
0.6(.023)
Small plastic package suitable for
0.5(.020)
surface mounted design
.135(.005)
1.15(.045)
.127(.004)
1.05(.041)
Wide variety of voltage ranges:
nom.2.0 to 120V (E24 range)
Tolerance approximately + / - 5%
Dimensions in millimeters and (inches)
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
Ptot
500
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
Zener Current see Table “Characteristics”
Power Dissipation
C
C
Characteristics at Tamb = 25oC
Thermal Resistance
Junction to Ambient Air
Forward Voltage
at IF = 10mA
Symbol
Min.
Typ.
Max.
Unit
RthA
-
-
0.3
K/mW
VF
-
-
0.9
V
MDD ELECTRONIC
MM1Z2V0~MM1Z120
Type
Marking
Zener Voltage Range1)
lZT
for
VZT
Dynamic Impedance2)
Reverse Leakage
Current
ZZ (Max)
IR (Max) at
at
IZ
VR
Temp. coefficient
of Zener Voltage
Code
Vznom
V
mA
V
Ω
mA
µA
V
TKvz
%/K
MM1Z 2V0
4A
2.0
5
1.80...2.15
100
5
120
0.5
-0.09...-0.06
MM1Z 2V2
4B
2.2
5
2.08...2.33
100
5
120
0.7
-0.09...-0.06
MM1Z 2V4
4C
2.4
5
2.28...2.56
100
5
120
1.0
-0.09...-0.06
MM1Z 2V7
4D
2.7
5
2.5...2.9
110
5
120
1.0
-0.09...-0.06
MM1Z 3V0
4E
3.0
5
2.8...3.2
120
5
50
1.0
-0.08...-0.05
-0.08...-0.05
MM1Z 3V3
4F
3.3
5
3.1...3.5
130
5
20
1.0
MM1Z 3V6
4H
3.6
5
3.4...3.8
130
5
10
1.0
-0.08...-0.05
MM1Z 3V9
4J
3.9
5
3.7...4.1
130
5
5
1.0
-0.08...-0.05
MM1Z 4V3
4K
4.3
5
4.0...4.6
130
5
5
1.0
-0.06...-0.03
MM1Z 4V7
4M
4.7
5
4.4...5.0
130
5
2
1.0
-0.05...+0.02
MM1Z 5V1
4N
5.1
5
4.8...5.4
130
5
2
1.5
-0.02...+0.02
MM1Z 5V6
4P
5.6
5
5.2...6.0
80
5
1
2.5
-0.05...+0.05
MM1Z 6V2
4R
6.2
5
5.8...6.6
50
5
1
3.0
0.03...0.06
MM1Z 6V8
4X
6.8
5
6.4...7.2
30
5
0.5
3.5
0.03...0.07
MM1Z 7V5
4Y
7.5
5
7.0...7.9
30
5
0.5
4.0
0.03...0.07
MM1Z 8V2
4Z
8.2
5
7.7...8.7
30
5
0.5
5.0
0.03...0.08
MM1Z 9V1
5A
9.1
5
8.5...9.6
30
5
0.5
6.0
0.03...0.09
MM1Z 10
5B
10
5
9.4...10.6
30
5
0.1
7.0
0.03...0.1
MM1Z 11
5C
11
5
10.4...11.6
30
5
0.1
8.0
0.03...0.11
MM1Z 12
5D
12
5
11.4...12.7
35
5
0.1
9.0
0.03...0.11
MM1Z 13
5E
13
5
12.4...14.1
35
5
0.1
10
0.03...0.11
MM1Z 15
5F
15
5
13.8...15.6
40
5
0.1
11
0.03...0.11
MM1Z 16
5H
16
5
15.3...17.1
40
5
0.1
12
0.03...0.11
MM1Z 18
5J
18
5
16.8...19.1
45
5
0.1
13
0.03...0.11
MM1Z 20
5K
20
5
18.8...21.2
50
5
0.1
15
0.03...0.11
MM1Z 22
5M
22
5
20.8...23.3
55
5
0.1
17
0.04...0.12
MM1Z 24
5N
24
5
22.8...25.6
60
5
0.1
19
0.04...0.12
MM1Z 27
5P
27
5
25.1...28.9
70
2
0.1
21
0.04...0.12
MM1Z 30
5R
30
5
28...32
80
2
0.1
23
0.04...0.12
MM1Z 33
5X
33
5
31...35
80
2
0.1
25
0.04...0.12
MM1Z 36
5Y
36
5
34...38
90
2
0.1
27
0.04...0.12
MM1Z 39
5Z
39
2.5
37...41
100
2
2
30
0.04...0.12
MM1Z 43
6A
43
2.5
40...46
130
2
2
33
0.04...0.12
MM1Z 47
6B
47
2.5
44...50
150
2
2
36
0.04...0.12
MM1Z 51
6C
51
2.5
48...54
180
2
1
39
0.04...0.12
MM1Z 56
6D
56
2.5
52...60
180
2
1
43
0.04...0.12
MM1Z 62
6E
62
2.5
58...66
200
2
0.2
47
0.04...0.12
MM1Z 68
6F
68
2.5
64...72
250
2
0.2
52
0.04...0.12
MM1Z 75
6H
75
2.5
70...79
300
2
0.2
57
0.04...0.12
MM1Z 82
6J
82
2.5
77...87
300
2
0.2
63
0.05...0.12
MM1Z 91
6K
91
1
85...96
700
1
0.2
69
0.05...0.12
MM1Z 100
6M
100
1
94...106
700
1
0.2
76
0.05...0.12
MM1Z 110
6N
110
1
104...116
800
1
0.2
84
0.05...0.12
MM1Z 120
6P
120
1
114...127
900
1
0.2
91
0.05...0.12
1)
2)
VZ is tested with pulses (20 ms).
ZZ is measured at IZ by given a very small A.C. current signal.
MDD ELECTRONIC
MM1Z2V0~MM1Z120
Breakdown characteristics
Tj = constant (pulsed)
mA
50
Iz
Tj=25o C
3V9
2V7
6V8
4V7
3V3
40
8V2
5V6
30
20
Test current Iz
5mA
10
0
0
1
2
3
4
5
6
8
7
9
10 V
Vz
Breakdown characteristics
Tj = constant (pulsed)
mA
30
Tj=25 oC
10
12
Iz
15
20
18
22
27
Test current Iz
5mA
10
33
0
0
10
20
30
Vz
MDD ELECTRONIC
40 V