GXELECTRONICS MM1Z2V0

星合电子
MM1Z2V0 THRU MM1Z120
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
0.5W SILICON PLANAR ZENER DIODES
SOD-123
FEATURES
(0.55 +0.05 )
-0.05
0.022"+0.002"
-0.002"
Total power dissipation:max.500 mW
Small plastic package suitable for surface mounted design
(1.60+0.05 )
-0.05
0.063"+0.002"
-0.002"
Wide variety of voltage ranges:
(2.65±0.05(
nom.2.0 to 120V(E24 range)
0.104"+0.002
-
Tolerance approximately ±5%
(3.8±0.1)
0.150"±0.004"
High temperature soldering guaranteed:260℃/10 seconds at terminals
5°
0.005"(0.135)
MAX
(1.10±0.05)
0.043"±0.002"
MECHANICAL DATA
Case: SOD-123 plastic case
Dimensions in inches and (millimeters)
Weight: Approx. 0.01 gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C)
Symbols
Value
Units
500
mW
150
C
Zener current see table "Characteristics"
Ptot
TJ
TSTG
Power dissipation
Junction temperature
Storage temperature range
C
-55 to+150
ELECTRICAL CHARACTERISTICS (TA=25 C)
Symbols
Thermal resistance junction to ambient
Forward voltage at IF=100mA
Min
RθJA
VF
Typ
Max
Units
300
K/W
0.9
V
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
1
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　ＴＥＬ：０５３６－２２１０３５９　ＱＱ：４６４７６８０１７
星合电子
MM1Z2V0 THRU MM1Z120
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
0.5W SILICON PLANAR ZENER DIODES
Zener Voltage range
Type
Marking
Code
2)
1)
Dynamic resistance
rZjt and rZjK at IZK
IZT for VZT
VZNOM
V
mA
V
mA
Reverse leakage
current
IR
at VR
A
V
Temp Coefficient
of zener voltage
TKVZ
%/K
MM1Z 2V0
4A
2.0
5
1.80...2.15
100
5
120
0.5
-0.09...-0.06
MM1Z 2V2
4B
2.2
5
2.08...2.33
100
5
120
0.7
-0.09...-0.06
MM1Z 2V4
4C
2.4
5
2.28...2.56
100
5
120
1.0
-0.09...-0.06
MM1Z 2V7
4D
2.7
5
2.5...2.9
110
5
120
1.0
-0.09...-0.06
MM1Z 3V0
4E
3.0
5
2.8...3.2
120
5
50
1.0
-0.08...-0.05
MM1Z 3V3
4F
3.3
5
3.1...3.5
130
5
20
1.0
-0.08...-0.05
MM1Z 3V6
4H
3.6
5
3.4...3.8
130
5
10
1.0
-0.08...-0.05
MM1Z 3V9
4J
3.9
5
3.7...4.1
130
5
5
1.0
-0.08...-0.05
MM1Z 4V3
4K
4.3
5
4.0...4.6
130
5
5
1.0
-0.06...-0.03
MM1Z 4V7
4M
4.7
5
4.4...5.0
130
5
2
1.0
-0.05...+0.02
MM1Z 5V1
4N
5.1
5
4.8...5.4
130
5
2
1.5
-0.02...+0.02
MM1Z 5V6
4P
5.6
5
5.2...6.0
80
5
1
2.5
-0.05...+0.05
MM1Z 6V2
4R
6.2
5
5.8...6.6
50
5
1
3.0
0.03...0.06
MM1Z 6V8
4X
6.8
5
6.4...7.2
30
5
0.5
3.5
0.03...0.07
MM1Z 7V5
4Y
7.5
5
7.0...7.9
30
5
0.5
4.0
0.03...0.07
MM1Z 8V2
4Z
8.2
5
7.7...8.7
30
5
0.5
5.0
0.03...0.08
MM1Z 9V1
5A
9.1
5
8.5...9.6
30
5
0.5
6.0
0.03...0.09
MM1Z 10
5B
10
5
9.4...10.6
30
5
0.1
7.0
0.03...0.1
MM1Z 11
5C
11
5
10.4...11.6
30
5
0.1
8.0
0.03...0.11
MM1Z 12
5D
12
5
11.4...12.7
35
5
0.1
9.0
0.03...0.11
MM1Z 13
5E
13
5
12.4...14.1
35
5
0.1
10
0.03...0.11
MM1Z 15
5F
15
5
13.8...15.6
40
5
0.1
11
0.03...0.11
MM1Z 16
5H
16
5
15.3...17.1
40
5
0.1
12
0.03...0.11
MM1Z 18
5J
18
5
16.8...19.1
45
5
0.1
13
0.03...0.11
MM1Z 20
5K
20
5
18.8...21.2
50
5
0.1
15
0.03...0.11
MM1Z 22
5M
22
5
20.8...23.3
55
5
0.1
17
0.04...0.12
MM1Z 24
5N
24
5
22.8...25.6
60
5
0.1
19
0.04...0.12
MM1Z 27
5P
27
5
25.1...28.9
70
2
0.1
21
0.04...0.12
MM1Z 30
5R
30
5
28...32
80
2
0.1
23
0.04...0.12
MM1Z 33
5X
33
5
31...35
80
2
0.1
25
0.04...0.12
MM1Z 36
5Y
36
5
34...38
90
2
0.1
27
0.04...0.12
MM1Z 39
5Z
39
2.5
37...41
100
2
2
30
0.04...0.12
MM1Z 43
6A
43
2.5
40...46
130
2
2
33
0.04...0.12
MM1Z 47
6B
47
2.5
44...50
150
2
2
36
0.04...0.12
MM1Z 51
6C
51
2.5
48...54
180
2
1
39
0.04...0.12
MM1Z 56
6D
56
2.5
52...60
180
2
1
43
0.04...0.12
MM1Z 62
6E
62
2.5
58...66
200
2
0.2
47
0.04...0.12
MM1Z 68
6F
68
2.5
64...72
250
2
0.2
52
0.04...0.12
MM1Z 75
6H
75
2.5
70...79
300
2
0.2
57
0.04...0.12
MM1Z 82
6J
82
2.5
77...87
300
2
0.2
63
0.05...0.12
MM1Z 91
6K
91
1
85...96
700
1
0.2
69
0.05...0.12
MM1Z 100
6M
100
1
94...106
700
1
0.2
76
0.05...0.12
MM1Z 110
6N
110
1
104...116
800
1
0.2
84
0.05...0.12
MM1Z 120
6P
120
1
114...127
900
1
0.2
91
0.05...0.12
1)Teated with pulses tp=20ms.
2)ZZ is measured at IZ by given a very small A.C. current signal.
2
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　ＴＥＬ：０５３６－２２１０３５９　ＱＱ：４６４７６８０１７
星合电子
MM1Z2V0 THRU MM1Z120
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
0.5W SILICON PLANAR ZENER DIODES
BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED)
mA
50
TJ=25 C
2V7
3V9
5V6
4V7
3V3
40
8V2
6V8
IZ
30
20
Test current IZ
5mA
10
0
0
1
2
3
4
5
6
7
8
9
10 V
VZ
BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED)
mA
30
TJ=25 C
10
12
15
IZ
20
18
22
27
33
Test current IZ
10
5mA
0
0
10
20
30
40 V
VZ
3
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　ＴＥＬ：０５３６－２２１０３５９　ＱＱ：４６４７６８０１７