ONSEMI NSVBAS21SLT1G

BAS21SLT1G,
NSVBAS21SLT1G
Dual Series High Voltage
Switching Diode
Features
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• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
•
•
ESD Rating − Machine Model: Class B
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
ANODE
1
3
CATHODE/ANODE
3
1
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
CATHODE
2
2
Symbol
Value
Unit
VR
250
Vdc
VRRM
250
Vdc
IF
225
mAdc
IFM(surge)
625
mAdc
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
°C/W
SOT−23
CASE 318
STYLE 11
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
RJA
417
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 6
1
JT M G
G
1
JT = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAS21SLT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
NSVBAS21SLT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAS21SLT1/D
BAS21SLT1G, NSVBAS21SLT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
−
−
0.1
100
250
−
−
−
1000
1250
OFF CHARACTERISTICS
IR
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 Adc)
V(BR)
Adc
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 )
trr
−
50
ns
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
IF
t
trr
10%
t
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 3.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = −55°C
1000
25°C
800
REVERSE CURRENT (nA)
FORWARD VOLTAGE (mV)
1200
155°C
600
400
200
1
1
10
100
1000
7000
6000
5000
TA = 155°C
4000
3000
6
5
4
3
2
1
0
TA = 25°C
TA = −55°C
1
FORWARD CURRENT (mA)
2
5
10
20
50
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
http://onsemi.com
2
100 200 300
BAS21SLT1G, NSVBAS21SLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE‐ANODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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BAS21SLT1/D