BAS116LT1G, SBAS116LT1G Switching Diode Features • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel http://onsemi.com Use BAS116LT1 to order the 7 inch/3,000 unit reel • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique 1 ANODE 3 CATHODE Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Peak Forward Surge Current SOT−23 (TO−236AB) CASE 318 STYLE 8 THERMAL CHARACTERISTICS Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. JV M G G JV = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAS116LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BAS116LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel SBAS116LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 8 1 Publication Order Number: BAS116LT1/D BAS116LT1G, SBAS116LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 75 − Vdc Reverse Voltage Leakage Current (VR = 75 Vdc) Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C) IR − − 5.0 80 nAdc Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) VF − − − − 900 1000 1100 1250 mV Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 2.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr − 3.0 ms OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mAdc) 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp IF t trr 10% t 0.1 mF 90% DUT 50 W INPUT SAMPLING OSCILLOSCOPE 50 W Output Pulse Generator 1. 2. 3. iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) INPUT SIGNAL A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Input pulse is adjusted so IR(peak) is equal to 10 mA. tp » trr Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS 1.2 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1,000 100 150°C 10 25°C −55°C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 TA = 25°C 1.0 0.8 0.6 0.4 0.2 0 1.2 0 10 20 30 40 50 60 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Capacitance http://onsemi.com 2 70 80 BAS116LT1G, SBAS116LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 ° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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