AP9977AGH
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Low Gate Charge
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
100mΩ
▼ Fast Switching Characteristic
ID
D
9A
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
9
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
5.7
A
30
A
12.5
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maixmum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
10.0
℃/W
110
℃/W
1
201126071
AP9977AGH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min.
Typ.
VGS=0V, ID=1mA
60
-
-
V
VGS=10V, ID=5A
-
-
100
mΩ
VGS=4.5V, ID=4A
-
-
165
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=5A
-
5
-
S
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=48V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=5A
-
7
12
nC
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.4
-
nC
VDS=30V
-
4
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=5A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
12
-
ns
tf
Fall Time
RD=6Ω
-
2.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
210
340
pF
Coss
Output Capacitance
VDS=25V
-
35
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Min.
Typ.
IS=10A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9977AGH
20
20
10V
7.0V
o
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
16
5.0V
12
4.5V
8
V G = 4 .0V
4
16
5.0V
12
4.5V
8
V G = 4 .0V
4
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
2.0
ID=4A
I D =5A
V G =10V
T C =25 o C
Normalized RDS(ON)
110
RDS(ON) (mΩ)
10V
7.0V
T C = 150 o C
100
90
1.6
1.2
0.8
80
0.4
70
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
10
1.1
Normalized VGS(th) (V)
IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.0
0.9
0.8
2
0.7
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9977AGH
f=1.0MHz
1000
12
ID=5A
V DS = 48 V
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
100
4
C oss
C rss
2
10
0
0
2
4
6
8
1
10
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
ID (A)
10
100us
1ms
1
10ms
100ms
DC
T C =25 o C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4