AP2761I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS(ON) 1Ω ID 10A G S Description AP2761 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V 10 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 6.4 A 36 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 37 W Linear Derating Factor 0.3 W/℃ EAS Single Pulse Avalanche Energy2 65 mJ IAR Avalanche Current 10 A TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 3.4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W Data & specifications subject to change without notice 200202074-1/4 AP2761I-A o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 650 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 1 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=5A - 4.8 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=±30V - - ±100 nA ID=10A - 53 - nC o IGSS 3 VGS=0V, ID=1mA Min. Qg Total Gate Charge Qgs Gate-Source Charge VDS=520V - 10 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 15 - nC 3 td(on) Turn-on Delay Time VDD=320V - 16 - ns tr Rise Time ID=10A - 20 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 82 - ns tf Fall Time RD=32Ω - 36 - ns Ciss Input Capacitance VGS=0V - 2770 - pF Coss Output Capacitance VDS=15V - 320 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF Min. Typ. - - Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 Test Conditions IS=10A, VGS=0V Max. Units 1.5 V trr Reverse Recovery Time IS=10A, VGS=0V, - 610 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8.64 - µC Notes: 1.Pulse width limited by max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A. 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP2761I-A 14 8 12 6 8 6 5.0V 4 4.5V 4 V G =4.0V 2 V G =4.0V 2 0 0 0 5 10 15 20 0 25 V DS , Drain-to-Source Voltage (V) 10 15 20 25 Fig 2. Typical Output Characteristics 3 1.2 I D =5A V G =10V 1.1 2 Normalized RDS(ON) Normalized BVDSS (V) 5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 0.9 0.8 1 0 -50 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( o C ) o T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 100 5 10 4 T j = 150 o C T j = 25 o C VGS(th) (V) IS (A) 10V 5.0V 10 ID , Drain Current (A) ID , Drain Current (A) T C =150 o C 10V 6.0V o T C =25 C 1 3 0.1 2 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1 -50 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2761I-A 16 f=1.0MHz 10000 C iss V DS =330V V DS =410V V DS =520V 12 C oss C (pF) VGS , Gate to Source Voltage (V) I D =10A 8 100 4 C rss 1 0 0 20 40 60 1 80 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 ID (A) 10us 100us 1 1ms T c =25 o C Single Pulse 10ms 100ms 0.1 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 10000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) t f Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4