AP2309GN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device ▼ RoHS Compliant BVDSS -30V RDS(ON) 75mΩ ID - 3.7A S SOT-23 Description G D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units - 30 V +20 V 3 - 3.7 A 3 -3 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -12 A PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 200807212 AP2309GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -30 - - V - -0.02 - V/℃ VGS=-10V, ID=-3A - - 75 mΩ VGS=-4.5V, ID=-2.6A - - 120 mΩ BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-3A - 5 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=55 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS=+20V - - +100 nA ID=-3A - 5 8 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3 - nC VDS=-15V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 20 - ns tf Fall Time RD=15Ω - 7 - ns Ciss Input Capacitance VGS=0V - 412 660 pF Coss Output Capacitance VDS=-25V - 91 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 62 - pF Min. Typ. IS=-1.2A, VGS=0V - - -1.2 V IS=-3A, VGS=0V, - 20 - ns dI/dt=100A/µs - 15 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2309GN-HF 45 45 -10V 40 T A =25 o C -7.0V 30 25 -5.0V -4.5V 20 15 10 -7.0V 30 25 -5.0V -4.5V 20 15 10 V G = - 3 .0V 5 V G = - 3 .0V 5 0 0 0 2 4 6 8 10 0 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 1.6 I D =-2.6A I D = -3A V G = -10V T A =25 o C 95 1.4 Normalized RDS(ON) RDS(ON) (mΩ ) -10V 35 -ID , Drain Current (A) -ID , Drain Current (A) 35 T A = 150 o C 40 85 75 1.2 1.0 0.8 65 0.6 55 3 5 7 9 -50 11 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.3 Normalized -VGS(th) (V) 3 -IS(A) 2 T j =150 o C T j =25 o C 1 0 1.1 0.9 0.7 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2309GN-HF f=1.0MHz 1000 10 ID= -3A V DS = -24V C iss 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 100 C oss C rss 4 2 0 10 0 2 4 6 8 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 -ID (A) 10 1ms 1 10ms 0.1 100ms T A =25 o C Single Pulse 1s DC 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 270℃/W 0.001 0.1 1 10 100 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Circuit Charge Q Fig 12. Gate Charge Circuit 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT-23 D Millimeters SYMBOLS D1 E1 E e MIN NOM MAX A 1.00 1.15 1.30 A1 0.00 -- 0.10 A2 0.10 0.15 0.25 D1 0.30 0.40 0.50 e 1.70 2.00 2.30 D 2.70 2.90 3.10 E 2.40 2.65 3.00 E1 1.40 1.50 1.60 1.All Dimension Are In Millimeters. A 2.Dimension Does Not Include Mold Protrusions. A2 A1 Part Marking Information & Packing : SOT-23 Part Number : NB NBYY Date Code : YY YY:2004,2008,2012… YY:2003,2007,2011… YY:2002,2006,2010… YY:2001,2005,2009… 5