AP4953GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D2
▼ Low Gate Charge
▼ Fast Switching
D2
D1
D1
BVDSS
-30V
RDS(ON)
53mΩ
ID
-5A
G2
S2
SO-8
S1
G1
Description
D2
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
G2
G1
S2
S1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 30
V
+20
V
3
-5
A
3
-4
A
- 20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
62.5
℃/W
Data and specifications subject to change without notice
1
200810075
AP4953GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-5A
-
-
53
mΩ
VGS=-4.5V, ID=-4A
-
-
90
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=-5A
-
8
15
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.5
-
nC
VDS=-15V
-
6.7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
21
-
ns
tf
Fall Time
RD=15Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
595
952
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4953GM
40
40
-ID , Drain Current (A)
-ID , Drain Current (A)
30
20
V G = -3.0V
30
20
V G = - 3.0 V
10
10
0
0
0
1
2
3
4
5
0
6
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.8
I D =-4A
T A =25 ℃
I D =-5A
V G =-10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
-10V
-7.0V
-5.0V
-4.5V
T A =150 o C
-10V
-7.0V
-5.0V
-4.5V
o
T A =25 C
60
50
1.4
1.2
1.0
0.8
0.6
40
2
4
6
8
10
-50
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8.00
1.6
Normalized -VGS(th) (V)
1.4
-IS(A)
6.00
o
o
T j =150 C
T j =25 C
4.00
1.2
1
0.8
2.00
0.6
0.00
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4953GM
f=1.0MHz
14
1000
C iss
10
I D = -5A
V DS = -15V
C (pF)
-VGS , Gate to Source Voltage (V)
12
8
100
C oss
6
C rss
4
2
10
0
0
4
8
12
16
1
20
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
100us
1ms
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
Duty Factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty Factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
DC
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
8
7
6
5
E1
1
2
3
4
e
B
E
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38
－
0.90
α
0.00
4.00
8.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
4953GM
YWWSSS
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5