AP4427GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Fast Switching Characteristic
D
D
BVDSS
35V
RDS(ON)
6.6mΩ
ID
▼ RoHS Compliant
SO-8
S
S
S
16A
G
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
35
V
+20
V
3
16
A
3
12.8
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
60
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
200811032
AP4427GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=1mA
Min.
Typ.
Max. Units
35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=7.5A
-
-
6.6
mΩ
VGS=4.5V, ID=7.5A
-
-
10
mΩ
0.8
-
2.3
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=7.5A
-
33
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=70 C) VDS=30V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=15A
-
35
56
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
22
-
nC
VDS=15V
-
13
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=7.5A
-
24
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
39
-
ns
tf
Fall Time
RD=2Ω
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
2850 4560
pF
Coss
Output Capacitance
VDS=10V
-
890
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
635
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.8
1.2
Ω
Min.
Typ.
IS=1.9A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=7.5A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
38
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4427GM
60
60
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
50
10V
7.0V
5.0V
4.5V
o
T A = 150 C
50
ID , Drain Current (A)
o
T A = 25 C
40
30
20
40
30
V G =3.0V
20
V G =3.0V
10
10
0
0
0
1
2
3
4
5
0
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
1.9
I D = 7.5 A
V G =10V
Normalized RDS(ON)
I D = 7.5 A
T A =25 ℃
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
8
6
1.4
0.9
0.4
4
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
14
1.6
T j =25 o C
T j =150 o C
Normalized VGS(th) (V)
12
IS(A)
10
8
6
1.2
0.8
4
2
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4427GM
f=1.0MHz
16
10000
V DS = 16 V
V DS = 20 V
V DS = 24 V
12
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 7.5 A
8
1000
C oss
C rss
4
100
0
0
20
40
60
1
80
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
10
Normalized Thermal Response (Rthja)
100us
1ms
ID (A)
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja=125 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V DS =5V
T j =25 o C
VG
T j =150 o C
ID , Drain Current (A)
100
QG
4.5V
80
QGS
60
QGD
40
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
8
7
6
5
E1
1
2
3
4
e
B
E
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38
－
0.90
α
0.00
4.00
8.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4427GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5