Product specification DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • • ID RDS(on) max TA = 25°C 70mΩ@ VGS = -10V -3.8A 120mΩ@ VGS =-4.5V -3.0A -30V • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) • • Power management functions Analog Switch Load Switch Boost Switch • • Drain SOT-23 D Gate S G Source Top View EQUIVALENT CIRCUIT Pin Configuration Ordering Information (Note 3) Part Number DMP3098L-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposefully added lead. Marking Information DMB Date Code Key Year Code Month Code 2008 V Jan 1 http://www.twtysemi.com 2009 W Feb 2 Mar 3 YM NEW PRODUCT V(BR)DSS Features and Benefits DMB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 [email protected] Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D 1 of 2 Product specification DMP3098L Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Drain Current (Note 4) VGS = -10V Steady State Units V V IDM Value -30 ±20 -3.8 -2.9 -11 Symbol PD RθJA TJ, TSTG Value 1.08 115 -55 to +150 Units W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 5) Thermal Characteristics A A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 7) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Min Typ Max Unit BVDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -800 ±100 V nA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 -1.8 -2.1 V RDS (ON) ⎯ 56 98 70 120 mΩ |Yfs| VSD ⎯ ⎯ 3.6 ⎯ ⎯ -1.26 S V VDS = VGS, ID = -250μA VGS = -10V, ID = -3.8A VGS = -4.5V, ID = -3.0A VDS = -5V, ID = -2.7A VGS = 0V, IS = -2.7A Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 336 70 49 4.6 1008 210 147 ⎯ pF pF pF Ω ⎯ 4.0 8.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7.8 1.0 2.5 6.0 5.0 17.6 9.5 ⎯ ⎯ ⎯ 12.0 10.0 35.2 19.0 IDSS Static Drain-Source On-Resistance Total Gate Charge Symbol Qg Qgs Qgd td(on) tr td(off) tf Test Condition VDS = -25V, VGS = 0V, f = 1.0MHz VGS = 0V VDS = 0V, f = 1MHz VDS = -15V, VGS = -4.5V, ID = -3.8A nC ns VDS = -15V, VGS = -10V, ID = -3.8A VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω 2. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t ≤5 sec. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2