Product specification DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Low On-Resistance: Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Load Switch DC-DC Converters Power management functions • • SOT23 Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain D Gate Top View Equivalent Circuit Top View S G Source Ordering Information (Note 3) Part Number DMN3051L-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free Marking Information 3N5 Date Code Key Year Code 2007 U 2008 V Month Code Jan 1 Feb 2 http://www.twtysemi.com 2009 W Mar 3 3N5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) YM NEW PRODUCT Features and Benefits 2010 X Apr 4 2011 Y May 5 [email protected] 2012 Z Jun 6 2013 A Jul 7 Aug 8 2014 B Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D 1 of 2 Product specification DMN3051L Maximum Ratings @TA = 25°C unless otherwise specified NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<5s Value 30 ±20 4.5 3.5 ID A 5.8 4.9 20 2 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 5) Units V V IDM IS A A A Thermal Characteristics Characteristic Symbol TA = 25°C TA = 70°C Steady state t < 5s TA = 25°C TA = 70°C Steady state t < 5s Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value 0.7 0.44 182 109 1.4 0.85 94 56 25 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ V nA IGSS ⎯ ⎯ ⎯ 800 ±80 ±800 VGS(th) |Yfs| VSD 1.3 ⎯ ⎯ ⎯ ⎯ 1.9 33 54 5 0.78 ⎯ 1.16 S V Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ - 424 115 81 1.51 9.0 1.3 1.3 3.4 6.2 13.9 2.8 ⎯ ⎯ ⎯ - pF pF pF Ω nC nC nC ns ns ns ns RDS (ON) 2.2 38 64 nA V mΩ Test Condition VGS = 0V, ID = 250μA VDS = 28V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5.0A VDS = 5V, ID = 3.1A VGS = 0V, IS = 2.0A VDS = 5V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 5.8A VDD = 15V, VGS = 10V, RL = 2.6Ω, RG = 3Ω 2. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 3. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2