Product specification DMN3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) max 30V 28mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V 82mΩ @ VGS = 3V ID max TA = +25°C 5.8A 4.8A 2.0A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data ideal for high efficiency power management applications. Case: SOT23 Applications Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Battery Charging Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions DC-DC Converters Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Portable Power Adaptors Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) Drain D Gate S G Source Top View Top View Internal Schematic Ordering Information (Note 4 & 5) Part Number DMN3404L-7 DMN3404LQ-7 Notes: Compliance Standard Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 34N Date Code Key Year Code Month Code 2009 W Jan 1 http://www.twtysemi.com 2010 X Feb 2 Mar 3 YM Marking Information 34N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 [email protected] 2012 Z Jun 6 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D 1 of 3 Product specification DMN3404L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage (Note 6 & 7) Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 7) VGS = 10V Steady State Continuous Drain Current (Note 7) VGS = 4.5V Steady State Continuous Drain Current (Note 7) VGS = 3V Steady State Symbol VDSS VGSS TA = -40°C TA = +25°C TA = +85°C TA = -40°C TA = +25°C TA = +85°C TA = -40°C TA = +25°C TA = +85°C TA = -40°C TA = +25°C TA = +85°C Pulsed Drain Current ID Value 30 ±20 4.6 4.2 3.0 Units V V A ID 6.2 5.8 4.0 A ID 5.2 4.8 3.2 A ID 2.2 2.0 1.0 A IDM 30 A Symbol PD RθJA PD RθJA TJ, TSTG Value 0.72 173 1.4 90 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range Notes: 3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 4. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. http://www.twtysemi.com [email protected] 2 of 3 Product specification DMN3404L Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8 ) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) Static Drain-Source On-Resistance TJ = -40°C (Note 9) RDS(ON) RDS(ON) Static Drain-Source On-Resistance TJ = +85°C (Note 9) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 3V) Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time RDS(ON) |Yfs| VSD 1.5 23 57 24 33 63 71 10 0.75 2.0 27 74 28 42 82 95 — 1.0 V — — Static Drain-Source On-Resistance TJ = +25°C 1.0 — — — — — — — — mΩ S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 4.8A VGS=3V, ID =2A VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.8A VGS=3V, ID =2A VGS=3V, ID =2A VDS = 5V, ID = 5.8A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — — 498 52 45 1.75 3.8 5.3 11.3 1.4 2.1 3.41 6.18 13.92 2.84 — — — 2.8 5.3 7.5 16 — — 10 13 28 10 pF pF pF Ω nC nC nC nC nC ns ns ns ns Notes: mΩ Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 3V, VDS = 15V, ID = 1A VGS = 10V/4.5V, VDS = 15V, ID = 5.8A VDD = 15V, VGS = 10V, RL = 2.6Ω, RG = 3Ω 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design and 25°C data. Not subject to production testing 7. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 3 of 3