Product specification 2SB806 ＳＯＴ－８９ Ｕｎｉｔ：ｍｍ １．５０ ±０．１ ４．５０±０．１ １．８０±０．１ ２． ５０ ±０ ．１ ４． ００ ±０ ．１ ■ Features ● High collector to emitter voltage: VCEO＞-120V. ２ ３ ０ ．８ ０ ±０．１ １ ０．４４±０．１ ０．４ ０±０． １ ２ ．６ ０±０． １ ０．４８±０．１ ０．５３±０．１ ３．００±０．１ １．Ｂａｓｅ ２．Ｃｏｌｌｅｃｔｏｒ ３．Ｅｍｉｔｔｅｒ ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V IC -0.7 A Collector current Collector current (pulse) *1 IC(pu) -1.2 A Collector power dissipation Pc 2 W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ *1. PW≤10ms,duty cycle≤50% ■ Electrical Characteristics Ta = 25℃ Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -120V, IE=0 Testconditons Min Typ -100 nA Emitter cutoff current IEBO VEB = -5V, IC=0 -100 nA DC current gain * hFE VCE =-1V , IC = -100mA 90 200 VCE =-1V , IC = -5.0mA 45 200 Collector-emitter saturation voltage * VCE(sat) IC = -500mA , IB = -50mA Base-emitter saturation voltage * VBE(sat) IC = -500mA , IB = -50mA -0.4 -550 400 -0.6 V -0.9 -1.5 V -620 -650 mV Base-emitter voltage * VBE VCE =-10V , IC = -10mA Output capacitance Cob VCB = -10V , IE = 0 , f = 1.0MHz 14 pF Transition frequency fT VCE = -10V , IE = 10mA 75 MHz * PW≤350µs,duty cycle≤2% ■ hFE Classification Marking KR KQ KP hFE 90～180 135～270 200～400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification 2SB806 http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Product specification 2SB806 http://www.twtysemi.com [email protected] 4008-318-123 3 of 3