Product specification 2SA1612 Features High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -120 V Collector to emitter voltage VCEO -120 V Emitter to base voltage VEBO -5 V Collector current (DC) IC -50 mA Total power dissipation PT 150 mW Tj 150 Tstg -55 to +150 Junction temperature Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -120V, IE=0 -50 nA Emitter cutoff current IEBO VEB = -5V, IC=0 -50 nA DC current gain hFE Collector-emitter saturation voltage * 135 VCE = -6V , IC = -0.1mA * 100 VCE(sat) IC = -10mA , IB = -1mA Base-emitter voltage Gain bandwidth product Output capacitance *. PW VCE = -6V , IC = -1mA VBE VCE = -6V , IC = -1mA fT VCE = -6V , IE = -1mA Cob VCB = -30V , IE = 0 , f = 1.0MHz 500 900 500 -0.09 -0.3 V -0.55 -0.61 -0.65 V 50 90 2 MHz 3 pF 350ìs,duty cycle 2% hFE Classification Marking C15 C16 C17 C18 hFE 135 270 200 400 300 600 450 900 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1