PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET® Power MOSFET VDSS RDS(on) max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3518 I-Pak IRFU3518 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 80 ± 20 38 27 150 110 0.71 5.2 -55 to + 175 V A W W/°C V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient www.kersemi.com Typ. Max. Units ––– ––– ––– 1.4 40 110 °C/W 1 09/23/02 IRFR3518/IRFU3518 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 80 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.09 24 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 29 mΩ VGS = 10V, ID = 18A 4.0 V VDS = VGS, ID = 250µA 20 VDS = 80V, VGS = 0V µA 250 VDS = 64V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 34 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 37 11 12 12 25 37 13 1710 270 33 1780 170 330 Max. Units Conditions ––– S VDS = 25V, ID = 18A 56 ID = 18A ––– nC VDS = 40V ––– VGS = 10V ––– VDD = 40V ––– I D = 18A ns ––– RG = 9.1Ω ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 64V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 160 18 11 mJ A mJ Diode Characteristics IS ISM VSD trr Q rr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 38 ––– ––– showing the A G integral reverse ––– ––– 150 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V ––– 77 ––– ns TJ = 25°C, IF = 18A ––– 210 ––– nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.kersemi.com IRFR3518/IRFU3518 TOP I D, Drain-to-Source Current (A) 100 BOTTOM 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP 100 I D, Drain-to-Source Current (A) 1000 10 4.5V 1 0.1 BOTTOM 10 4.5V 1 20µs PULSE WIDTH T J= 25 ° C 20µs PULSE WIDTH T J= 175 ° C 0.01 0.1 1 10 0.1 100 0.1 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 1000.00 3.0 I D = 38A 2.5 100.00 T J = 175°C 10.00 VDS = 25V 20µs PULSE WIDTH 1.00 4.0 6.0 8.0 10.0 12.0 14.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.kersemi.com 16.0 2.0 (Normalized) T J = 25°C RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) 10 V DS, Drain-to-Source Voltage (V) 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR3518/IRFU3518 100000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 10000 C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C iss 1000 C oss 100 C rss ID = 18A VDS= 40V VDS= 64V 10 VDS= 16V 8 6 4 2 0 10 1 10 0 100 10 20 30 40 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 I SD , Reverse Drain Current (A) 100 TJ = 175 ° C 10 T J= 25 ° C 1 V GS = 0 V 0.5 1.0 1.5 V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 10msec 0.1 0.1 0.0 100µsec 10 2.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.kersemi.com IRFR3518/IRFU3518 40 RD V DS LIMITED BY PACKAGE VGS I D , Drain Current (A) D.U.T. RG 30 + -VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC ) 10 1 Thermal Response D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 5 IRFR3518/IRFU3518 320 15V ID 7.3A 13A 18A TOP + V - DD IAS 20V A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG BOTTOM DRIVER L VDS 240 160 80 0 25 50 75 100 125 150 175 ( ° C) Starting Tj, Junction Temperature Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.kersemi.com IRFR3518/IRFU3518 Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T + - - + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.kersemi.com 7 IRFR3518/IRFU3518 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 10.42 (.410) 9.40 (.370) 1 2 1 - GATE 0.51 (.020) MIN. -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) LEAD ASSIGNMENTS 3 0.89 (.035) 0.64 (.025) 0.25 (.010) 2 - DRAIN 3 - SOURCE 4 - DRAIN 0.58 (.023) 0.46 (.018) M A M B NOTES: 2.28 (.090) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). D-Pak (TO-252AA) Part Marking Information 8 www.kersemi.com IRFR3518/IRFU3518 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.52 (.060) 1.15 (.045) 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 -B- NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2.28 (.090) 1.91 (.075) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 9.65 (.380) 8.89 (.350) 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 2.28 (.090) 2X 3X 1.14 (.045) 0.89 (.035) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 0.58 (.023) 0.46 (.018) I-Pak (TO-251AA) Part Marking Information www.kersemi.com 9 IRFR3518/IRFU3518 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.99mH R G = 25Ω, IAS = 18A. ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 300µs; duty cycle ≤ 2%. 10 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. www.kersemi.com