2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C) 0.4 1 1 3 Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 150* mW Junction temperature Tj 150 °C Tstg −55 to 150 °C 0.5 ± 0.05 Rating 0.13 ± 0.05 2 Symbol Storage temperature range 0.80 ± 0.05 0.4 1.2 ± 0.05 : hFE = 120 to 400 0.8 ± 0.05 : VCEO = 50 V, IC = 150 mA (max) Characteristic 1.2 ± 0.05 0.32 ± 0.05 High voltage and high current 0.22 ± 0.05 • VESM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-1L1A Note: Using continuously under heavy loads (e.g. the application of Weight: 1.5 mg (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt) Mount Pad Dimensions (Reference) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Unit: mm 1 2010-05-19 2SC6026MFV Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cutoff current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA 120 ⎯ 400 ⎯ IC = 100 mA, IB = 10 mA ⎯ 0.15 0.25 V VCE = 10 V, IC = 1 mA 60 ⎯ ⎯ MHz VCB = 10 V, IE = 0, f = 1 MHz ⎯ 0.95 3 pF DC current gain hFE (Note) Collector-emitter saturation voltage VCE (sat) Transition frequency fT Collector output capacitance Cob VCE = 6 V, IC = 2 mA Note: hFE classification Y (Y): 120 to 240, GR (G): 200 to 400 ( ) marking symbol Marking Type Name hFE Classification HY 2 2010-05-19 2SC6026MFV IC - VCE hFE - IC 1000 120 1.5 1.0 COLLECTOR CURRENT IC (mA) Ta = 100°C 0.7 80 0.5 60 0.3 DC CURRENT GAIN hFE 2.0 100 0.2 40 IB = 0.1 mA 20 -25 100 COMMON EMITTER VCE = 6 V VCE = 1 V COMMON EMITTER Ta = 25°C 0 25 10 0 1 2 3 4 5 6 7 0.1 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 10 VBE(sat) - IC VCE(sat) - IC 10 COMMON EMITTER IC/IB = 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1000 COLLECTOR CURRENT IC (mA) 1 Ta = 100°C 0.1 25 -25 COMMON EMITTER IC/ IB = 10 25 -25 1 Ta = 100°C 0.1 0.01 0.1 1 10 100 0.1 1000 COLLECTOR CURRENT IC (mA) 1 10 COLLECTOR POWER DISSIPATION PC (mV) Ta = 100°C 10 25 -25 1 COMMON EMITTER VCE = 6V 0.1 0 0.2 0.4 0.6 1000 PC - Ta IB - VBE 100 100 COLLECTOR CURRENT IC (mA) 1000 BASE CURRENT IB (μA) 100 0.8 1 1.2 1.4 BASE-EMITTER VOLTAGE VBE (V) 250 Mounted on FR4 board (24.5 mm ××25.4mm 24.5 mm××1.6mmt) 1.6 mmt) (25.4mm 200 150 100 50 0 0 50 100 150 200 AMBIENT TEMPERATURE Ta (°C) 3 2010-05-19 2SC6026MFV RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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