2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026 0.35±0.05 : VCEO = −50 V, IC = −100 mA (max) 0.2±0.05 0.15±0.05 • High voltage and high current 1 3 2 Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −30 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 0.1±0.05 +0.02 Characteristic 0.8±0.05 1.0±0.05 0.48 -0.04 Absolute Maximum Ratings (Ta = 25°C) 0.1±0.05 fSM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-1E1A temperature, etc.) may cause this product to decrease in the Weight: 0.6 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain hFE (Note) Collector-emitter saturation voltage Transition frequency VCE (sat) fT Collector output capacitance Cob Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 Min Typ. Max Unit ⎯ ⎯ −0.1 μA ⎯ ⎯ −0.1 μA 120 ⎯ 400 ⎯ IC = −100 mA, IB = −10 mA ⎯ −0.18 −0.3 V VCE = −10 V, IC = −1 mA 80 ⎯ ⎯ MHz VCB = −10 V, IE = 0, f = 1 MHz ⎯ 1.6 ⎯ pF VCE = −6 V, IC = −2 mA Note: hFE classification Y (F): 120~240, GR (H): 200~400 ( ) marking symbol Marking Type Name hFE Rank 8F 1 2007-11-01 2SA2154 hFE - IC IC - VCE 1000 -120 COLLECTOR CURRENT IC (mA) -100 -1.5 DC CURRENT GAIN hFE COMMON EMITTER Ta = 25°C -2.0 -1.0 -80 -0.7 -60 -0.5 -40 -0.3 -0.2 Ta = 100°C 100 -25 COMMON EMITTER VCE = −6V VCE = −1V -20 IB = -0.1mA -00 -00 -1 -2 -3 -4 -5 -6 10 -0.1 -7 -1 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat) - IC VBE(sat) - IC COMMON EMITTER IC/IB = 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -100 -10 -0.1 Ta = 100°C 25 -25 -0.01 -0.1 -1 -10 COMMON EMITTER IC/IB = 10 -25 -1 25 -0.1 -0.1 -100 -1 COLLECTOR CURRENT IC (mA) IB - VBE COLLECTOR POWER DISSIPATION PC (mV) -10 -25 25 -1 COMMON EMITTER VCE = −6V -0.1 -0.2 -0.4 -0.6 -0.8 -10 -100 PC - Ta -100 Ta = 100°C Ta = 100°C COLLECTOR CURRENT IC (mA) -1000 BASE CURRENT IB (uA) -10 COLLECTOR CURRENT IC (mA) -1 -00 25 -1 -1.2 -1.4 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (°C) BASE-EMITTER VOLTAGE VBE (V) 2 2007-11-01 2SA2154 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2007-11-01