2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT ３ ２ 0.25±0.03 １ Absolute Maximum Ratings (Ta = 25°C) 0.35±0.02 0.05±0.03 Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 30 mA PC (Note1) 100 mW Tj 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Collector power dissipation Junction temperature Storage temperature range 0.15±0.03 0.38 +0.02 -0.03 Characteristics 0.05±0.03 • 1.0±0.05 • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 0.65±0.02 • 0.25±0.03 : VCEO = 50V, IC = 100mA (max) CST3 1.BASE 2.EMITTER 3.COLLECTOR TOSHIBA 2-1J1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.75 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1 : Mounted on FR4 board (10 mm × 10 mm × 1 mmt) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA 120 ⎯ 400 ⎯ IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V VCE = 10 V, IC = 1 mA 60 ⎯ ⎯ MHz VCB = 10 V, IE = 0, f = 1 MHz ⎯ 0.95 ⎯ pF DC current gain hFE (Note) Collector-emitter saturation voltage Transition frequency VCE (sat) fT Collector output capacitance Cob VCE = 6 V, IC = 2 mA Note: hFE classification Y (F): 120~240, GR (H): 200~400 ( ) marking symbol Marking Type Name hFE Rank 1 7F 3 2 1 2009-04-13 2SC6026CT IC - VCE hFE - IC 1000 120 1.5 1.0 COLLECTOR CURRENT IC (mA) 0.7 80 0.5 60 0.3 DC CURRENT GAIN hFE 2.0 100 0.2 40 IB=0.1mA 20 -25℃ 100 COMMON EMITTER VCE=6V VCE=1V COMMON EMITTER Ta=25℃ 0 10 0 1 2 3 4 5 6 7 0.1 1 COLLECTOR-EMITTER VOLTAGE VCE (V) 1000 10 COMMON EMITTER IC/IB=10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 100 VBE(sat) - IC VCE(sat) - IC 0.1 10 COLLECTOR CURRENT IC (mA) 1 Ta=100℃ 25℃ -25℃ COMMON EMITTER IC/ IB=10 25℃ -25℃ 1 Ta=100℃ 0.1 0.01 0.1 1 10 100 0.1 1000 COLLECTOR CURRENT IC (mA) 1 COLLECTOR POWER DISSIPATION PC (mV) COMMON EMITTER VCE=6V Ta=100℃ 100 25℃ 10 -25℃ 1 0.1 0 0.2 0.4 0.6 100 1000 PC - Ta 10000 1000 10 COLLECTOR CURRENT IC (mA) IB - VBE BASE CURRENT IB (μA) 25℃ Ta=100℃ 0.8 1 1.2 1.4 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 Mounted on FR4 board (10 mm × 10 mm × 1 mmt) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (°C) BASE-EMITTER VOLTAGE VBE (V) 2 2009-04-13 2SC6026CT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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