1SMF5920BT1G Product Preview 2.5 Watt Zener Diode in Flat Lead Package This complete new line of 2.5 Watt Zener Diodes are offered in highly efficient micro miniature and space saving surface mount design. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/ consumer applications. Features • • • • • • • • • Zener Breakdown Voltage: 6.2 V Low Leakage < 5 mA ESD Rating of Class 3 (> 16 kV) per Human Body Model Small Footprint − Footprint Area of 8.45 mm2 Low Profile − Maximum Height of 1.0 mm Supplied in 8 mm Tape and Reel − 3,000 Units per Reel Cathode Indicated by Polarity Band Lead Orientation in Tape: Cathode Lead to Sprocket Holes These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com PLASTIC SURFACE MOUNT 2.5 WATT ZENER DIODE 6.2 VOLTS 1 2 1: CATHODE 2: ANODE SOD−123FL CASE 498 PLASTIC Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic MARKING DIAGRAM Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any 1 CATHODE QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements 5Y2M G G 2 ANODE 5Y2 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package 1SMF5920BT1G SOD−123FL (Pb−Free) Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2010 October 2010 − Rev. P0 1 Publication Order Number: 1SMF5920B/D 1SMF5920BT1G MAXIMUM RATINGS Rating DC Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead Symbol Value Unit °PD° RqJA 350 2.9 350 °mW mW/°C °C/W RqJL 30 °C/W °PD 2.5 W TJ, Tstg −55 to +150 °C Maximum DC Power Dissipation (Notes 1 and 2) Operating and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted with recommended minimum pad size, PC board FR−4. 2. At lead temperature 75°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 1.5 V Max. @ IF = 200 mA for all types) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IF VC VBR VRWM Maximum Reverse Leakage Current @ VRWM VBR V IR VF IT Working Peak Reverse Voltage Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) Zener Voltage (Note 3) VZ @ IZT (Volts) IZT IR @ VR VR ZZT @ IZT (Note 4) ZZK @ IZK (Note 4) IZK Device Device Marking Min Nom Max (mA) (mA) (V) (W) (W) (mA) 1SMF5920BT1G 5Y2 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0 3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C. 4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. http://onsemi.com 2 1SMF5920BT1G TYPICAL CHARACTERISTICS 100 3 IZ, ZENER CURRENT (mA) P D , MAXIMUM POWER DISSIPATION (W) 3.5 2.5 2 TL 1.5 1 10 1 0.5 0 25 50 75 100 125 150 0.1 175 5 6 T, TEMPERATURE (°C) 7 8 9 10 VZ, ZENER VOLTAGE (VOLTS) qVZ, TEMPERATURE COEFFICIENT (mV/°C) Figure 1. Steady State Power Derating Figure 2. VZ ZZ , DYNAMIC IMPEDANCE (OHMS) 10 8 VZ @ IZT 6 4 2 0 −2 −4 2 4 6 8 10 VZ, ZENER VOLTAGE (VOLTS) 200 IZ(dc) = 1mA 100 70 50 12 30 20 10 7 5 3 2 10 mA 20 mA 5 7 1k 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) 70 100 10,000 TJ = 25°C iZ(rms) = 0.1 IZ(dc) 500 200 C, CAPACITANCE (pF) Z Z , DYNAMIC IMPEDANCE (OHMS) iZ(rms) = 0.1 IZ(dc) Figure 4. Effect of Zener Voltage Figure 3. Zener Voltage 100 50 20 10 5 2 1 11 0.5 1 6.8 V 2 5 10 20 50 100 200 500 IZ, ZENER TEST CURRENT (mA) 1000 MEASURED @ 0 V BIAS MEASURED @ 50% VR 100 10 1 10 VZ, REVERSE ZENER VOLTAGE (VOLTS) Figure 6. Capacitance versus Reverse Zener Voltage Figure 5. Effect of Zener Current http://onsemi.com 3 100 1SMF5920BT1G PACKAGE DIMENSIONS SOD−123FL CASE 498−01 ISSUE A E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. q D DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A L MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 1.00 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° b SOLDERING FOOTPRINT* ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ HE q c 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.22 0.048 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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