MM5ZxxxT1G Series, SZMM5ZxxxT1G Series Zener Voltage Regulators 300 mW SOD−523 Surface Mount This series of Zener diodes is packaged in a SOD−523 surface mount package. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com SOD−523 CASE 502 STYLE 1 Specification Features: • Standard Zener Breakdown Voltage Range − 2.4 V to 75 V • Steady State Power Rating of 300 mW • Small Body Outline Dimensions: • • • • • 0.047″ x 0.032″ (1.20 mm x 0.80 mm) Low Body Height: 0.028″ (0.7 mm) ESD Rating of Class 3 (> 16 kV) per Human Body Model AEC−Q101 Qualified and PPAP Capable − SZMM5ZxxxT1G SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These are Pb−Free Devices* Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic 2 ORDERING INFORMATION MAXIMUM RATINGS Junction and Storage Temperature Range 1 XX M G G (Note: Microdot may be in either location) Device Meets MSL 1 Requirements Thermal Resistance, Junction−to−Ambient (Note 1) MARKING DIAGRAM *Date Code orientation may vary depending upon manufacturing location. QUALIFIED MAX REFLOW TEMPERATURE: 260°C Total Device Dissipation FR−5 Board, @ TA = 25°C 2 Anode XX = Specific Device Code M = Date Code* G = Pb−Free Package Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any Rating 1 Cathode Symbol Max Unit PD 300 mW RqJA 390 °C/W TJ, Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. EIA/JEDEC51.3 board design and EIA/JEDEC51.2 still air test method (25 mm2, 2 oz., 3.8 mm plating). Device Package Shipping† MM5ZxxxxT1G SOD−523 (Pb−Free) 3,000 / Tape & Reel SZMM5ZxxxT1G SOD−523 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics tables starting on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 April, 2013 − Rev. 10 1 Publication Order Number: MM5Z2V4T1/D MM5ZxxxT1G Series, SZMM5ZxxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF C IF VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @VR = 0 and f = 1 MHz TYPICAL CHARACTERISTICS 100 80 POWER DISSIPATION (%) QVZ I 60 40 20 0 0 25 50 75 100 125 TEMPERATURE (°C) Figure 1. Steady State Power Derating http://onsemi.com 2 150 V MM5ZxxxT1G Series, SZMM5ZxxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Zener Voltage (Note 1) Zener Impedance Leakage Current C @ VR = 0 f = 1 MHz @ IZT ZZT @ IZT Max mA W W mA mA Volts Min Max pF 2.4 2.6 5 100 1000 1.0 50 1.0 −3.5 0 450 2.5 2.7 2.9 5 100 1000 1.0 20 1.0 −3.5 0 450 2.8 3.0 3.2 5 100 1000 1.0 10 1.0 −3.5 0 450 05 3.1 3.3 3.5 5 95 1000 1.0 5 1.0 −3.5 0 450 MM5Z3V6T1G 06 3.4 3.6 3.8 5 90 1000 1.0 5 1.0 −3.5 0 450 MM5Z4V3T1G 08 4.0 4.3 4.6 5 90 1000 1.0 3 1.0 −3.5 0 450 MM5Z4V7T1G 09 4.4 4.7 5.0 5 80 800 1.0 3 2.0 −3.5 0.2 260 MM5Z5V1T1G 0A 4.8 5.1 5.4 5 60 500 1.0 2 2.0 −2.7 1.2 225 MM5Z5V6T1G 0C 5.2 5.6 6.0 5 40 200 1.0 1 2.0 −2.0 2.5 200 MM5Z6V2T1G 0E 5.8 6.2 6.6 5 10 100 1.0 3 4.0 0.4 3.7 185 MM5Z6V8T1G 0F 6.4 6.8 7.2 5 15 160 1.0 2 4.0 1.2 4.5 155 MM5Z7V5T1G 0G 7.0 7.5 7.9 5 15 160 1.0 1 5.0 2.5 5.3 140 MM5Z8V2T1G 0H 7.7 8.2 8.7 5 15 160 1.0 0.7 5.0 3.2 6.2 135 MM5Z9V1T1G 0K 8.5 9.1 9.6 5 15 160 1.0 0.2 7.0 3.8 7.0 130 MM5Z10VT1G 0L 9.4 10 10.6 5 20 160 1.0 0.1 8.0 4.5 8.0 130 MM5Z11VT1G 0M 10.4 11 11.6 5 20 160 1.0 0.1 8.0 5.4 9.0 130 MM5Z12VT1G 0N 11.4 12 12.7 5 25 80 1.0 0.1 8.0 6.0 10 130 MM5Z13VT1G 0P 12.4 13.25 14.1 5 30 80 1.0 0.1 8.0 7.0 11 120 MM5Z15VT1G 0T 14.3 15 15.8 5 30 80 1.0 0.05 10.5 9.2 13 110 MM5Z16VT1G 0U 15.3 16.2 17.1 5 40 80 1.0 0.05 11.2 10.4 14 105 MM5Z18VT1G 0W 16.8 18 19.1 5 45 80 1.0 0.05 12.6 12.4 16 100 MM5Z20VT1G 0Z 18.8 20 21.2 5 55 100 1.0 0.05 14.0 14.4 18 85 MM5Z22VT1G 10 20.8 22 23.3 5 55 100 1.0 0.05 15.4 16.4 20 85 MM5Z24VT1G 11 22.8 24.2 25.6 5 70 120 1.0 0.05 16.8 18.4 22 80 MM5Z27VT1G 12 25.1 27 28.9 2 80 300 1.0 0.05 18.9 21.4 25.3 70 MM5Z30VT1G 14 28 30 32 2 80 300 1.0 0.05 21.0 24.4 29.4 70 MM5Z33VT1G 18 31 33 35 2 80 300 1.0 0.05 23.2 27.4 33.4 70 MM5Z36VT1G 19 34 36 38 2 90 500 1.0 0.05 25.2 30.4 37.4 70 MM5Z39VT1G 20 37 39 41 2 130 500 1.0 0.05 27.3 33.4 41.2 45 MM5Z43VT1G 21 40 43 46 2 150 500 1.0 0.05 30.1 37.6 46.6 40 MM5Z47VT1G 1A 44 47 50 2 170 500 1.0 0.05 32.9 42.0 51.8 40 MM5Z51VT1G 1C 48 51 54 2 180 500 1.0 0.05 35.7 46.6 57.2 40 MM5Z56VT1G 1D 52 56 60 2 200 500 1.0 0.05 39.2 52.2 63.8 40 MM5Z62VT1G 1E 58 62 66 2 215 500 1.0 0.05 43.4 58.8 71.6 35 MM5Z68VT1G 1F 64 68 72 2 240 500 1.0 0.05 47.6 65.6 79.8 35 MM5Z75VT1G 1G 70 75 79 2 255 500 1.0 0.05 52.5 73.4 88.6 35 VZ (Volts) Device Marking Min Nom MM5Z2V4T1G 00 2.2 MM5Z2V7T1G 01 MM5Z3V0T1G 02 MM5Z3V3T1G Device* ZZK @ IZK IR @ VR 1. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *Include SZ-prefix devices where applicable. http://onsemi.com 3 QVZ (mV/k) @ IZT MM5ZxxxT1G Series, SZMM5ZxxxT1G Series PACKAGE DIMENSIONS SOD−523 CASE 502 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −X− D −Y− E 2X b 0.08 1 M 2 DIM A b c D E HE L L2 X Y TOP VIEW A MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE c HE SIDE VIEW 2X RECOMMENDED SOLDERING FOOTPRINT* L 2X 1.80 0.48 2X 2X 0.40 L2 BOTTOM VIEW PACKAGE OUTLINE DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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